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Rutherford backscattering spectrometry of electrically charged targets; Elegant technique for measuring charge-state distribution of backscattered ions

帯電した試料のラザフォード後方散乱分光; 後方散乱イオンの荷電分布を測定するためのエレガントな方法

高廣 克己*; 寺井 睦*; 川面 澄*; 楢本 洋; 山本 春也; 土屋 文*; 永田 晋二*; 西山 文隆*

Takahiro, Katsumi*; Terai, Atsushi*; Kawatsura, Kiyoshi*; Naramoto, Hiroshi; Yamamoto, Shunya; Tsuchiya, Bun*; Nagata, Shinji*; Nishiyama, Fumitaka*

$$alpha$$-Al$$_{2}$$O$$_{3}$$はイオンが入射しても安定に帯電する。この現象を利用して、ラザフォード後方散乱(RBS)実験で、散乱粒子の荷電状態を識別した。ランダム条件でのRBS実験ではCu/Au/$$alpha$$-Al$$_{2}$$O$$_{3}$$を用い、Cu, Au夫々の成分に対応して二つのピークが検出された。チャネリング条件下でのRBS実験では$$alpha$$-Al$$_{2}$$O$$_{3}$$単体を用い、Al, O夫々からの散乱に対応する、計4個の表面ピークを確認した。後方散乱粒子の電荷分布は、強度解析から定量的にできる。

It is found that the surface charging during Rutherford backscattering spectrometry (RBS) of insulating sapphire samples enables us to measure the charge-state distribution of probing ions backscattered at the sapphire surface. For Cu/Au-deposited Al$$_{2}$$O$$_{3}$$ samples, two components, higher and lower-energy ones, were resolved on both Cu and Au peaks in the RBS random spectrum. For single-crystalline Al$$_{2}$$O$$_{3}$$ samples, a double-peak structure was clearly observed on both Al and O surface peaks in the RBS aligned spectrum. The charge-state distribution can be obtained from the intensity of each component. The results obtained here are compared with previous data for the equilibrium charge-state distribution.

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パーセンタイル:8.76

分野:Physics, Applied

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