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Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation

陽電子消滅法による酸化亜鉛中の育成時導入欠陥と電子線照射誘起欠陥の焼鈍過程の研究

Chen, Z. Q.*; Wang, S. J.*; 前川 雅樹; 河裾 厚男; 楢本 洋*; Yuan, X. L.*; 関口 隆史*

Chen, Z. Q.*; Wang, S. J.*; Maekawa, Masaki; Kawasuso, Atsuo; Naramoto, Hiroshi*; Yuan, X. L.*; Sekiguchi, Takashi*

酸化亜鉛中の育成時導入欠陥と電子線照射誘起欠陥について、陽電子消滅による研究を行った。その結果、育成時導入欠陥は亜鉛空孔に起因するものが存在することがわかった。この欠陥は600$$^{circ}$$Cまでの焼鈍で消失する。電子線照射後にも、亜鉛空孔が主要な欠陥種であるが、ほとんどが200$$^{circ}$$Cの焼鈍で格子間原子との結合によって消失することがわかった。また、400$$^{circ}$$Cの焼鈍で二次欠陥が生成することがわかった。電子運動量分布の詳細な解析から、この二次欠陥は、亜鉛空孔とは異なる化学状態にあることが判明した。

Vacancy-type defects in as-grown ZnO single crystals have been identified using positron annihilation spectroscopy. The grown-in defects are supposed to be zinc vacancy V$$_{Zn}$$-related defects, and can be easily removed by annealing above 600$$^{circ}$$C. V$$_{Zn}$$-related defects are also introduced in ZnO when subjected to 3 MeV electron irradiation with a dose of 5.5$$times$$10$$^{18}$$ cm$$^{-2}$$. Most of these irradiation-induced V$$_{Zn}$$ are annealed at temperatures below 200$$^{circ}$$C through recombination with the close interstitials. However, after annealing at around 400$$^{circ}$$C, secondary defects are generated. A detailed analysis of the Doppler broadening measurements indicates that the irradiation introduced defects and the annealing induced secondary defects belong to different species. It is also found that positron trapping by these two defects has different temperature dependences. The probable candidates for the secondary defects are tentatively discussed in combination with Raman scattering studies. After annealing at 700$$^{circ}$$C, all the vacancy defects are annealed out. Cathodoluminescence measurements show that V$$_{Zn}$$ is not related to the visible emission at 2.3 eV in ZnO, but would rather act as nonradiative recombination centers.

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パーセンタイル:88.76

分野:Materials Science, Multidisciplinary

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