Reduction of interface traps and enhancement of channel mobility in n-channel 6H-SiC MOSFETs by irradiation with -rays

Hishiki, Shigeomi; Reshanov, S. A.*; Oshima, Takeshi; Ito, Hisayoshi; Pensl, G.*

N-channel 6H-SiC MOSFETs has been investigated radiation effect. The MOSFETs were irradiated by -rays up to 3.16 MGy(SiO $_{2}$ ) at room temperature. The electrical characteristic was estimated by Hall effect measurement and current vs. voltage measurement. The -rays irradiated MOSFETs were observed that channel mobility increased due to decrease interface traps.

Language	:	English
Journal	:	Materials Science Forum
Volume	:	600-603
Number	:
Pages	:	p.703 - 706
Publication Year/Month	:	2009/00
Meeting title	:	International Conference on Silicon Carbide and Related Materials 2007 (ICSCRM 2007)
Held date	:	2007/10
Location (city)	:	Otsu
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.4028/www.scientific.net/MSF.600-603.703
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	コバルト60照射施設
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:47.43 Category:Materials Science, Ceramics
Altmetrics	:

Registration No. : BB20072148
JAEA Abstracts No. : 47001613
Paper Submission No. : 22222

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.