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Report No.

Reduction of interface traps and enhancement of channel mobility in n-channel 6H-SiC MOSFETs by irradiation with $$gamma$$-rays

Hishiki, Shigeomi; Reshanov, S. A.*; Oshima, Takeshi; Ito, Hisayoshi; Pensl, G.*

N-channel 6H-SiC MOSFETs has been investigated radiation effect. The MOSFETs were irradiated by $$gamma$$-rays up to 3.16 MGy(SiO$$_{2}$$) at room temperature. The electrical characteristic was estimated by Hall effect measurement and current vs. voltage measurement. The $$gamma$$-rays irradiated MOSFETs were observed that channel mobility increased due to decrease interface traps.



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