Electrical characteristics of 6H-SiC MOSFETs after high dose irradiation

Oshima, Takeshi; Hishiki, Shigeomi*; Iwamoto, Naoya; Reshanov, S. A.*; Pensl, G.*; Kojima, Kazutoshi*; Kawano, Katsuyasu*

no abstracts in English

Language	:	English
Journal	:	Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University
Volume	:
Number	:
Pages	:	p.31 - 34
Publication Year/Month	:	2007/12
Meeting title	:	第26回法政大学イオンビーム工学研究所シンポジウム
Held date	:	2007/12
Location (city)	:	小金井
Location (country)	:	日本
Patent information	:
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DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	no keyword
Research Facility	:	コバルト60照射施設
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	産業技術総合研究所

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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
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Registration No. : BB20072983
JAEA Abstracts No. : 36000778
Paper Submission No. : 4065

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