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Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method

マイクロ波光伝導減衰法による未照射,電子線照射p型4H-SiCエピタキシャル層の過剰キャリアの寿命評価

松下 由憲*; 加藤 正史*; 市村 正也*; 畑山 智亮*; 大島 武

Matsushita, Yoshinori*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

耐放射線性半導体デバイスへの応用が期待される炭化ケイ素(SiC)の電子線照射による伝導キャリアの寿命変化をマイクロ波光伝導減衰法($$mu$$-PCD)により評価した。試料は、ボロン添加p型六方晶(4H)SiC基板上に作製したアルミニウム添加p型4H-SiCエピタキシャル膜を用い、160keVの電子線を1$$times$$10$$^{16}$$cm$$^{-2}$$ (ele-16)又は1$$times$$10$$^{17}$$cm$$^{-2}$$(ele-17)照射することで損傷を導入した。$$mu$$-PCDの結果、未照射, ele-16, ele-17の試料のキャリアの寿命は、それぞれ、0.14$$mu$$s, 0.07$$mu$$s及び0.04$$mu$$sとなり、電子線照射量の増加とともに、低下することが判明した。これより、160keV電子線照射により導入される損傷はキャリアの再結合中心として働くことが結論できた。

Silicon carbide (SiC) is a promising material for radiation hardness devices. In this study, we evaluated excess carrier decay curves in both as-grown and electron-irradiated p-type 4H-SiC layers by the microwave photoconductivity decay ($$mu$$-PCD) method. The samples used in this study were an Al-doped p-type epitaxial layer grown on a Si-face B doped bulk p-type 4H-SiC. The samples were irradiated with electrons at an energy of 160 keV and at a doses of 1$$times$$10$$^{16}$$ cm$$^{-2}$$ (ele-16) and 1$$times$$10$$^{17}$$ cm$$^{-2}$$ (ele-17). As a results of $$mu$$-PCD measurements, the lifetimes of free carriers for as-grown, ele-16 and ele-17 were estimated to be 0.14 $$mu$$s, 0.07 $$mu$$s and 0.04 $$mu$$s, respectively. This result indicates that defects acting as recombination centers were introduced by the electron irradiation.

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