Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance

電子常磁性共鳴によるフッ素注入したシリコン中のフッ素-空孔欠陥の研究

梅田 享英*; 磯谷 順一*; 大島 武; 小野田 忍; 森下 憲雄; 小此木 堅祐*; 白竹 茂*

Umeda, Takahide*; Isoya, Junichi*; Oshima, Takeshi; Onoda, Shinobu; Morishita, Norio; Okonogi, Kensuke*; Shiratake, Shigeru*

In this study, fluorine-vacancy defects (FV) in silicon (Si) were investigated by electron paramagnetic resonance, EPR. The FV vacancies in Si were created using fluorine ion implantation at room temperature and subsequent annealing up to 700 C. As a result, the most primitive center was FV (the F0 center) in the case of initial stage of F implantation. With increasing the implanted F ions or annealing to the sample, other FV defects with more accumulation of F atoms appeared. Then, the F center (FV) was observed as the most stable center. The next one was the F center (FV). FV defects were not found in this study. FV defects were probably detected as the F center.