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Local structure around Mn atoms in IV-VI ferromagnetic semiconductor Ge$$_{0.6}$$Mn$$_{0.4}$$Te investigated by X-ray fluorescence holography

蛍光X線ホログラフィーによるIV-VI族強磁性半導体Ge$$_{0.6}$$Mn$$_{0.4}$$Te中のMn原子まわりの局所構造解析

八方 直久*; 竹原 祐紀*; 藤原 真*; 田中 公一*; 仙波 伸也*; 細川 伸也*; 林 好一*; Hu, W.; 鈴木 基寛*; 浅田 裕法*

Happo, Naohisa*; Tekehara, Yuki*; Fujiwara, Makoto*; Tanaka, Koichi*; Semba, Shinya*; Hosokawa, Shinya*; Hayashi, Koichi*; Hu, W.; Suzuki, Motohiro*; Asada, Hironori*

The local atomic structure around Mn atoms in Ge$$_{1-x}$$Mn$$_{x}$$Te thin-film single crystal has been investigated by X-ray fluorescence holography (XFH) at room temperature. The obtained atomic image suggests that the Mn atoms replace the Ge atoms in the host GeTe, and the Mn position is stable in the exact positions of the anion fcc sublattice. The XFH result also suggests the fluctuation of the Ge positions or the cation vacancies.

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パーセンタイル:20.9

分野:Physics, Applied

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