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Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation

電子線照射によるInGaAs量子ドット層を持つGaAs太陽電池の電気特性変化

大島 武; 佐藤 真一郎; 今泉 充*; 中村 徹哉*; 菅谷 武芳*; 松原 浩司*; 仁木 栄*

Oshima, Takeshi; Sato, Shinichiro; Imaizumi, Mitsuru*; Nakamura, Tetsuya*; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*

量子ドット(QD)太陽電池の宇宙応用の可能性を調べるため、In$$_{0.4}$$Ga$$_{0.6}$$As QD層を50層有するGaAs太陽電池に1MeV電子線を1$$times$$10$$^{16}$$/cm$$^{2}$$照射した。照射後、短絡電流I$$_{rm SC}$$,開放電圧V$$_{rm OC}$$及び最大電力P$$_{rm MAX}$$は、それぞれ、初期値の80, 90及び55%まで減少した。一方、無QDのGaAs太陽電池は、それらの値は、それぞれ、95, 80及び63%まで低下した。QD太陽電池のI$$_{rm SC}$$が無QDに比べ大きく劣化した理由は、QD太陽電池の光吸収層が1.1$$mu$$mと無QD太陽電池の660nmに比べ厚く、そのため、発生する照射欠陥が特性劣化に及ぼす影響が大きくなったためと考えられる。一方、光吸収層長に直接影響しないV$$_{rm OC}$$は、QD太陽電池の方が無QDに比べ劣化が小さく、QDの優れた耐放射線性が示唆された。さらに、照射後の特性回復をAM0光照射下で室温にて調べたところ、両太陽電池ともに特性の回復現象が観測された。QDの有無にかかわらず回復が観察されたことからQD特有の現象ではなく、GaAsのようなIII-V族半導体で報告されている光注入による劣化特性の回復であると考えられる。

GaAs solar cells which have a PiN structure with 50 self-organized In$$_{0.4}$$Ga$$_{0.6}$$As Quantum Dot (QD) layers were irradiated with 1 MeV electrons up to 1$$times$$10$$^{16}$$ /cm$$^{2}$$. After irradiation at 1$$times$$10$$^{16}$$/cm$$^{2}$$, the remaining factor of I$$_{rm SC}$$, V$$_{rm OC}$$ and P$$_{rm MAX}$$ for the InGaAs 50 QD solar cell becomes 80, 90 and 55% of the initial values, respectively. On the other hand, those values for non QD GaAs solar cells decrease to 95, 80 and 63% of the initial values, respectively. Since the i-layer for the 50 QD solar cells (1.1 $$mu$$m) is thicker than the non QD solar cells (660 nm), the larger degradation of I$$_{rm SC}$$ for the 50 QD solar cells than the non QD ones can be interpreted in terms that the carrier recombination in the i-layer for the 50 QD solar cells is larger than that for the non QD solar cells. For V$$_{rm OC}$$, the 50 QD solar cells showes better radiation resistance than the non QD solar cells. Furthermore, the annealing behavior of the electrical characteristics for the 50 QD and the non QD solar cells was investigated at RT under AM 0 immediately after the irradiation. As a result, the recovery of the electrical characteristics for both solar cells was observed, and the GaAs solar cells shows relatively larger recovery compared to the 50 QD solar cells. Although the mechanism of this recovery has not yet been clarified, the origin of this recovery is thought not to come from the existence of QDs because the GaAs solar cell without QD layers also shows the recovery.

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パーセンタイル:49.44

分野:Energy & Fuels

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