Dopant effects on solid phase epitaxy in silicon and germanium

シリコン及びゲルマニウム中の固相エピタキシャルにおける不純物効果

Johnson, B. C.; 大島 武; McCallum, J. C.*

Johnson, B. C.; Oshima, Takeshi; McCallum, J. C.*

The kinetics of dopant-enhanced solid phase epitaxy (SPE) in amorphous germanium (a-Ge) and silicon (a-Si) layers which are created by ion implantation are investigated. Implanted Sb atoms as dopants into a-Ge at concentrations up to 110/cm are considered and compared to As-implanted layers with similar concentration of As atoms. Although an active Sb concentration above the solubility limit is achieved, a significant portion of the implanted atoms are not. P, As, and B atom enhanced SPE rates in Si are also analyzed. The relative velocities of P and As in Si are similar to those of As and Sb in Ge. Theoretical predictions on the basis of a simple form of the generalized Fermi level shifting model well agree with the results experimentally obtained in this study.