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論文

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Lohrmann, A.*; Castelletto, S.*; Klein, J. R.*; 大島 武; Bosi, M.*; Negri, M.*; Lau, D. W. M.*; Gibson, B. C.*; Prawer, S.*; McCallum, J. C.*; et al.

Applied Physics Letters, 108(2), p.021107_1 - 021107_4, 2016/01

 被引用回数:26 パーセンタイル:81.53(Physics, Applied)

Creation and characterisation of single photon emitters near the surface of 4H- and 6H-silicon carbide bulk substrates and 3C-SiC epitaxially grown on silicon substrates were investigated. These single photon emitters can be created and stabilized by thermal annealing in an oxygen atmosphere at temperatures above 550 $$^{circ}$$C. Hydrofluoric acid (HF) treatment is shown to effectively annihilate the emission from defects and to restore an optically clean surface. However, the emission from the defects can be obtained after re-oxidation above 550 $$^{circ}$$C. By measuring using standard confocal microscopy techniques, the excited state lifetimes for the emitters are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice.

論文

Single-photon emitting diode in silicon carbide

Lohrmann, A.*; 岩本 直也*; Bodrog, Z.*; Castelletto, S.*; 大島 武; Karle, T. J.*; Gali, A.*; Prawer, S.*; McCallum, J. C.*; Johnson, B. C.*

Nature Communications (Internet), 6, p.7783_1 - 7783_7, 2015/07

 被引用回数:110 パーセンタイル:96.86(Multidisciplinary Sciences)

A new single photon source (SPS) was found in hexagonal silicon carbide (SiC), and the luminescence from the SPS could be controlled by the operation of the pn diode. The SPS showed electro-luminescence (EL) with spectra between 700 and 850 nm (zero phonon line: 745 nm) and the EL could be easily observed at even room temperature (RT). Also, the SPS has very high thermal stability and can be observed even after 1800 $$^{circ}$$C annealing. The luminescence from the SPS was also observed by photo-luminescence measurements at RT. From Ab initio calculation, it was proposed that the silicon antisite defects beneath cubic SiC inclusion are a reasonable structure for the SPS although the identification of the SPS has not yet done.

論文

Atom-photon coupling from nitrogen-vacancy centres embedded in tellurite microspheres

Ruan, Y.*; Gibson, B. C.*; Lau, D. W. M.*; Greentree, A. D.*; Ji, H.*; Ebendorff-Heidepriem, H.*; Johnson, B. C.*; 大島 武; Monro, T. M.*

Scientific Reports (Internet), 5, p.11486_1 - 11486_7, 2015/06

 被引用回数:4 パーセンタイル:29.28(Multidisciplinary Sciences)

A technique for creating high quality tellurite microspheres with embedded nano-diamonds (NDs) containing nitrogen-vacancy (NV) centers was developed. TZN tellurite glass (TeO$$_{2}$$-ZnO-Na$$_{2}$$O) was fabricated in-house using the melt-quench technique and was formed to be glass fiber with a diameter of 0.16 mm. During this process, NDs with NV centers which were created by electron irradiation at 2 MeV were added into TZN tellurite glass above 690 $$^{circ}$$C. To obtain uniformly dispersed ND solutions, the NDs were processed using strong acid reflux and ultra-sonication before the mixture with TZN tellurite glass. This method can realize very bright fluorescence of the NVs in the NDs at room temperature. It is concluded that this new approach can be applied to a robust way of creating cavities for use in quantum and sensing applications.

論文

Nanodiamond in tellurite glass, 2; Practical nanodiamond-doped fibers

Ruan, Y.*; Ji, H.*; Johnson, B. C.*; 大島 武; Greentree, A. D.*; Gibson, B. C.*; Monro, T. M.*; Ebendorff-Heidepriem, H.*

Optical Materials Express (Internet), 5(1), p.73 - 87, 2015/01

 被引用回数:16 パーセンタイル:72.75(Materials Science, Multidisciplinary)

Tellurite glass fibers with embedded nanodiamond are attractive materials for quantum photonics applications. Reducing the loss of these fibers in the 600-800 nm wavelength range of nanodiamond fluorescence is essential to exploit the unique properties of nanodiamond in the new hybrid material. We reported the origin of loss in nanodiamond-doped glass and impact of glass fabrication conditions, as part I. In this study, we report the fabrication of nanodiamond-doped tellurite fibers with significantly reduced loss in the visible through further understanding of the impact of glass fabrication conditions on the interaction of the glass melt with the embedded nanodiamond. We fabricated nanodiamond with Nitrogen-Vacancy (NV) centers by 2 MeV electron irradiation at 1$$times$$10$$^{18}$$ /cm$$^{2}$$ and subsequent annealing at 800 $$^{circ}$$C. The nanodiamonds with NV centers were added into molten Tellurite glass. Tellurite fibers containing nanodiamond with concentrations up to 0.7 ppm-weight were fabricated, while reducing the loss by more than an order of magnitude down to 10 dB/m at 600-800 nm.

論文

Room temperature quantum emission from cubic silicon carbide nanoparticles

Castelletto, S.*; Johnson, B. C.*; Zachreson, C.*; Beke, D.*; Balogh, I.*; 大島 武; Aharonovich, I.*; Gali, A.*

ACS Nano, 8(8), p.7938 - 7947, 2014/08

Single Photon Sources (SPSs) in cubic (3C) Silicon Carbide (SiC) Nano Particles (NPs) were investigated. As a result, photo luminescence (PL) with broad emission at wavelength ranges between 600 and 800 nm was observed from 3C-SiC NPs at room temperature. The second order photon auto-correlation measurements revealed that defect with the PL characteristic is SPSs. The intensity and stability of the PL increased when samples were irradiated with electrons and subsequently annealed at 500 $$^{circ}$$C. From PL measurements at low temperature and theoretical analysis using spin-polarized density functional theory, the defect can be identified as carbon-antisite carbon-vacancy pair (C$$_{Si}$$V$$_{C}$$).

論文

Detection of atomic spin labels in a lipid bilayer using a single-spin nanodiamond probe

Kaufmann, S.*; Simpson, D. A.*; Hall, L. T.*; Perunicic, V.*; Senn, P.*; Steinert, S.*; McGuinness, L. P.*; Johnson, B. C.*; 大島 武; Caruso, F.*; et al.

Proceedings of the National Academy of Sciences of the United States of America, 110(27), p.10894 - 10898, 2013/07

 被引用回数:81 パーセンタイル:92.61(Multidisciplinary Sciences)

The detection of gadolinium (Gd) spin labels in an artificial cell membrane under ambient conditions was demonstrated using a single-spin nanodiamond sensor which is negatively charged nitrogen vacancy centers in nanodiamond. Changes in the spin relaxation time (T1) of the sensor located in the lipid bilayer were optically detected using a confocal microscope system. As a result, T1 decreased with increasing proximal Gd labels. The detection of such small numbers of spins in a model biological setting opens a new pathway for in-situ nanoscale detection of dynamical processes in biology.

論文

Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors

岩本 直也; Johnson, B. C.; 星乃 紀博*; 伊藤 雅彦*; 土田 秀一*; 児島 一聡*; 大島 武

Journal of Applied Physics, 113(14), p.143714_1 - 143714_5, 2013/04

 被引用回数:27 パーセンタイル:77.13(Physics, Applied)

A correlation between radiation induced defects and charge collection performance of 4H-SiC Schottky barrier diodes has been studied. Charge collection efficiency (CCE) of the detectors is degraded by irradiation with 1 MeV electrons to a fluence of 1$$times10^{15}$$ cm$$^{-2}$$. Three electron traps, labeled EH$$_1$$, Z$$_{1/2}$$ and EH$$_3$$, are observed after the electron irradiation by deep level transient spectroscopy. Low temperature annealing at 300 $$^circ$$C is found to recover CCE significantly and remove EH$$_1$$ and EH$$_3$$ completely. On the other hand, Z$$_{1/2}$$ is not removed by annealing up to 400 $$^{circ}$$C, and does not correlate the annealing behavior of CCE. Therefore, we conclude that EH$$_1$$ and EH$$_3$$ are more responsible for the degraded CCE than Z$$_{1/2}$$.

論文

Annealing effects on charge collection efficiency of an electron-irradiated 4H-SiC particle detector

岩本 直也; Johnson, B. C.; 大島 武; 星乃 紀博*; 伊藤 雅彦*; 土田 秀一*

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.62 - 65, 2012/12

Thermal annealing effects on the charge collection efficiency (CCE) of an electron-irradiated 4H-SiC Schottky barrier diode (SBD) particle detector have been studied. The SBD particle detector was irradiated with 1 MeV electrons to a fluence of 1$$times$$10$$^{15}$$ cm$$^{-2}$$ and subsequently annealed between 100 $$^{circ}$$C and 600 $$^{circ}$$C for 30 minutes. The CCE of the SBD was characterized by using 5.5 MeV alpha particles. Before the electron irradiation, a CCE value of 100% is obtained at a reverse bias voltage of 20 V and higher. Degradation of the CCE is seen after electron irradiation and is more pronounced at lower bias voltages. The degraded CCE recovers as the anneal temperature increases up to 300 $$^{circ}$$C. However, the CCE starts to decrease again by 350 $$^{circ}$$C. From these results, it is concluded that thermal annealing for the recovery of SBD particle detector performance should not exceed 300 $$^{circ}$$C.

論文

Collection of lanthanides and actinides from natural waters with conventional and nanoporous sorbents

Johnson, B. E.*; Santschi, P. H.*; Chuang, C.-Y.*; 乙坂 重嘉; Addleman, R. S.*; Douglas, M.*; Rutledge, R. D.*; Chouyyok, W.*; Davidson, J. D.*; Fryxell, G. E.*; et al.

Environmental Science & Technology, 46(20), p.11251 - 11258, 2012/11

 被引用回数:69 パーセンタイル:89.16(Engineering, Environmental)

新しい多孔質吸着材とこれまでに用いられてきた吸着材について、代表的なランタノイド及びアクチノイドの回収効率を比較検討した。ナノ構造の材料を用いた吸着材は、典型的な吸着材に比べて吸着効率,安定性ともに高い性能を発揮した。3,4-ヒドロキシピリジノンを施した多孔質シリカは、海水,河川水のいずれでも安定して特に優れた性能を示した。これらの新たな吸着材は、天然資源採取、環境修復、化学物質の分離、現場分析等の多くの分野での応用が期待できる。

論文

Dopant effects on solid phase epitaxy in silicon and germanium

Johnson, B. C.; 大島 武; McCallum, J. C.*

Journal of Applied Physics, 111(3), p.034906_1 - 034906_6, 2012/02

 被引用回数:7 パーセンタイル:33.93(Physics, Applied)

The kinetics of dopant-enhanced solid phase epitaxy (SPE) in amorphous germanium (a-Ge) and silicon (a-Si) layers which are created by ion implantation are investigated. Implanted Sb atoms as dopants into a-Ge at concentrations up to 1$$times$$10$$^{20}$$/cm$$^{3}$$ are considered and compared to As-implanted layers with similar concentration of As atoms. Although an active Sb concentration above the solubility limit is achieved, a significant portion of the implanted atoms are not. P, As, and B atom enhanced SPE rates in Si are also analyzed. The relative velocities of P and As in Si are similar to those of As and Sb in Ge. Theoretical predictions on the basis of a simple form of the generalized Fermi level shifting model well agree with the results experimentally obtained in this study.

論文

ENDF/B-VII.1 nuclear data for science and technology; Cross sections, covariances, fission product yields and decay data

Chadwick, M. B.*; Herman, M.*; Oblo$v{z}$insk$'y$, P.*; Dunn, M. E.*; Danon, Y.*; Kahler, A. C.*; Smith, D. L.*; Pritychenko, B.*; Arbanas, G.*; Arcilla, R.*; et al.

Nuclear Data Sheets, 112(12), p.2887 - 2996, 2011/12

 被引用回数:1623 パーセンタイル:100(Physics, Nuclear)

原子力科学・技術の利用分野ための評価済み核データライブラリーENDF/B-VII.1を公開した。米国核データ評価委員会が中心となって評価・整備したこの最新ライブラリーは、前バージョン(ENDF/B-VII.0)公開以後に得られた原子核理論や実験に関する知見を反映した中性子断面積,共分散,核分裂収率や崩壊データ等を格納している。ライブラリーの主な更新内容は、核種数の拡大、共分散データの拡充、R行列理論に基づく軽核の共鳴パラメータ評価、中重核やアクチノイドデータの改訂等である。核外輸送コードMCNPによるベンチマーク解析を行った結果、臨界予測性能等のパフォーマンスが向上した。

論文

Event structure and double helicity asymmetry in jet production from polarized $$p + p$$ collisions at $$sqrt{s}$$ = 200 GeV

Adare, A.*; Afanasiev, S.*; Aidala, C.*; Ajitanand, N. N.*; Akiba, Y.*; Al-Bataineh, H.*; Alexander, J.*; Aoki, K.*; Aphecetche, L.*; Armendariz, R.*; et al.

Physical Review D, 84(1), p.012006_1 - 012006_18, 2011/07

 被引用回数:25 パーセンタイル:72.31(Astronomy & Astrophysics)

重心エネルギー200GeVでの縦偏極陽子陽子衝突からのジェット生成のイベント構造と二重非対称($$A_{LL}$$)について報告する。光子と荷電粒子がPHENIX実験で測定され、イベント構造がPHYTIAイベント生成コードの結果と比較された。再構成されたジェットの生成率は2次までの摂動QCDの計算で十分再現される。測定された$$A_{LL}$$は、一番低い横運動量で-0.0014$$pm$$0.0037、一番高い横運動量で-0.0181$$pm$$0.0282であった。この$$A_{LL}$$の結果を幾つかの$$Delta G(x)$$の分布を仮定した理論予想と比較する。

論文

Identified charged hadron production in $$p + p$$ collisions at $$sqrt{s}$$ = 200 and 62.4 GeV

Adare, A.*; Afanasiev, S.*; Aidala, C.*; Ajitanand, N. N.*; 秋葉 康之*; Al-Bataineh, H.*; Alexander, J.*; 青木 和也*; Aphecetche, L.*; Armendariz, R.*; et al.

Physical Review C, 83(6), p.064903_1 - 064903_29, 2011/06

 被引用回数:156 パーセンタイル:99.42(Physics, Nuclear)

200GeVと62.4GeVでの陽子陽子の中心衝突からの$$pi, K, p$$の横運動量分布及び収量をRHICのPHENIX実験によって測定した。それぞれエネルギーでの逆スロープパラメーター、平均横運動量及び単位rapidityあたりの収量を求め、異なるエネルギーでの他の測定結果と比較する。また$$m_T$$$$x_T$$スケーリングのようなスケーリングについて示して陽子陽子衝突における粒子生成メカニズムについて議論する。さらに測定したスペクトルを二次の摂動QCDの計算と比較する。

論文

Azimuthal correlations of electrons from heavy-flavor decay with hadrons in $$p+p$$ and Au+Au collisions at $$sqrt{s_{NN}}$$ = 200 GeV

Adare, A.*; Afanasiev, S.*; Aidala, C.*; Ajitanand, N. N.*; 秋葉 康之*; Al-Bataineh, H.*; Alexander, J.*; 青木 和也*; Aphecetche, L.*; Aramaki, Y.*; et al.

Physical Review C, 83(4), p.044912_1 - 044912_16, 2011/04

 被引用回数:8 パーセンタイル:52.71(Physics, Nuclear)

重いフレーバーのメソンの崩壊からの電子の測定は、このメソンの収量が金金衝突では陽子陽子に比べて抑制されていることを示している。われわれはこの研究をさらに進めて二つの粒子の相関、つまり重いフレーバーメソンの崩壊からの電子と、もう一つの重いフレーバーメソンあるいはジェットの破片からの荷電ハドロン、の相関を調べた。この測定は重いクォークとクォークグルオン物質の相互作用についてのより詳しい情報を与えるものである。われわれは特に金金衝突では陽子陽子に比べて反対側のジェットの形と収量が変化していることを見いだした。

論文

Measurement of neutral mesons in $$p$$ + $$p$$ collisions at $$sqrt{s}$$ = 200 GeV and scaling properties of hadron production

Adare, A.*; Afanasiev, S.*; Aidala, C.*; Ajitanand, N. N.*; Akiba, Y.*; Al-Bataineh, H.*; Alexander, J.*; Aoki, K.*; Aphecetche, L.*; Armendariz, R.*; et al.

Physical Review D, 83(5), p.052004_1 - 052004_26, 2011/03

 被引用回数:149 パーセンタイル:98.49(Astronomy & Astrophysics)

RHIC-PHENIX実験で重心エネルギー200GeVの陽子陽子衝突からの$$K^0_s$$, $$omega$$, $$eta'$$$$phi$$中間子生成の微分断面積を測定した。これらハドロンの横運動量分布のスペクトルの形はたった二つのパラメーター、$$n, T$$、のTsallis分布関数でよく記述できる。これらのパラメーターはそれぞれ高い横運動量と低い横運動量の領域のスペクトルを決めている。これらの分布をフィットして得られた積分された不変断面積はこれまで測定されたデータ及び統計モデルの予言と一致している。

論文

Overview of high priority ITER diagnostic systems status

Walsh, M.*; Andrew, P.*; Barnsley, R.*; Bertalot, L.*; Boivin, R.*; Bora, D.*; Bouhamou, R.*; Ciattaglia, S.*; Costley, A. E.*; Counsell, G.*; et al.

Proceedings of 23rd IAEA Fusion Energy Conference (FEC 2010) (CD-ROM), 8 Pages, 2011/03

The ITER device is currently under construction. To fulfil its mission, it will need a set of measurement systems. These systems will have to be robust and satisfy many requirements hitherto unexplored in Tokamaks. Typically, diagnostics occupy either a removable item called a port plug, or installed inside the machine as an intricate part of the overall construction. Limited space availability has meant that many systems have to be grouped together. Installation of the diagnostic systems has to be closely planned with the overall schedule. This paper will describe some of the challenges and systems that are currently being progressed.

論文

Defining the infrared systems for ITER

Reichle, R.*; Andrew, P.*; Counsell, G.*; Drevon, J.-M.*; Encheva, A.*; Janeschitz, G.*; Johnson, D. W.*; 草間 義紀; Levesy, B.*; Martin, A.*; et al.

Review of Scientific Instruments, 81(10), p.10E135_1 - 10E135_5, 2010/10

 被引用回数:23 パーセンタイル:71.53(Instruments & Instrumentation)

ITER will have wide angle viewing systems and a divertor thermography diagnostic which shall provide infrared coverage of the divertor and large parts of the first wall surfaces with spatial and temporal resolution adequate for operational purposes and higher resolved details of the divertor and other areas for physics investigations. We propose specifications for each system such that they jointly respond to the requirements. Risk analysis driven priorities for future work concern mirror degradation, interfaces with other diagnostics, radiation damage to refractive optics, reflections and the development of calibration and measurements methods for varying optical and thermal target properties.

論文

Progress in the ITER physics basis, 7; Diagnostics

Donn$'e$, A. J. H.*; Costley, A. E.*; Barnsley, R.*; Bindslev, H.*; Boivin, R.*; Conway, G.*; Fisher, R.*; Giannella, R.*; Hartfuss, H.*; von Hellermann, M. G.*; et al.

Nuclear Fusion, 47(6), p.S337 - S384, 2007/06

 被引用回数:291 パーセンタイル:80.7(Physics, Fluids & Plasmas)

「ITER物理基盤」は、その名の通りITERプラズマの物理基盤を与えるために編纂されたレビュー論文であり、Nuclear Fusion誌の特集号として1999年に発刊された。本「ITER物理基盤の進展」は、「ITER物理基盤」発刊以降に得られた研究開発成果を纏めたレビュー論文である。そのうち、第7章は、ITERにおけるプラズマ計測について包括的に取り扱うものである。主な項目は以下の通り。(1)ITERでの計測に対する要求性能,(2)ITERに適用する計測の原理と手法,(3)ITERでの計測の実現のために必要な技術開発項目,(4)ITERトカマク装置への計測機器の統合,(5)「ITER物理基盤」で提起された主要課題の進展状況,(6)ITERにおける計測性能の評価,(7)将来の核融合炉に向けてITERで学習すべき課題。

論文

Design progress of the vacuum vessel for ITER

小野塚 正紀*; Johnson, G.*; 伊尾木 公裕*; Sonnazzaro, G.*; Y.Utin*; 高橋 健司*; 飯塚 隆行; R.Parker*; 小泉 興一; E.Kuzmin*; et al.

Proc. of 17th IEEE/NPSS Symposium Fusion Engineering (SOFE'97), p.1013 - 1016, 1998/00

ITER計画における真空容器はトロイダル磁場(TF)コイルからフレキシブルロッドにて垂直方向に支持され、水平方向にはTFコイルと赤道部ポートを繋ぐトロイダルリングで支持される。ブランケット及びダイバータは容器内面に固定され、それからくる荷量は容器を通して支持構造物へ伝達される。また、真空容器はSS316L(N)-1G製であり二重壁構造を有し、内壁及び外壁は補強リブにて溶接接合され必要とされる機械的強度を確保する。多角柱であったインボード部直線部分は円柱構造と改良され、TFコイル電流放出時に誘起される荷量に対する構造強度が図られる等の進展をみた。

口頭

Dopant enhanced solid phase epitaxy in silicon and germanium

Johnson, B. C.; 大島 武; McCallum, J. C.*

no journal, , 

Solid phase epitaxy (SPE) is an efficient process to activate implanted dopants on a low thermal budget. Although SPE is a common processing step in the formation of shallow junctions, a complete model is still lacking. Here, we reassess the dominant SPE model describing the dopant dependence of SPE to include factors related to the strain introduced by high dopant concentrations. A range of parameters cause the SPE regrowth rate to deviate from its intrinsic value, characterized by an activation energy of 2.7 eV for Si and 2.15 eV for Ge, This includes the dopant concentration, pressure and the presence of impurities. It is assumed that the defects are in thermal and electronic equilibrium and that the concentrations of positively or negatively charged defects are determined by the band structure and density of states of the bulk crystal. The SPE regrowth rate is then expected to be proportional to the concentration of these defects. The free parameters of the model are the SPE defect energy level and degeneracy. A comprehensive data set for both Si (As, P and B) and Ge (As, Sb and Al) over a wide range of dopant concentrations and SPE anneal temperatures is used to test this model.

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