Room temperature quantum emission from cubic silicon carbide nanoparticles

立方晶炭化ケイ素ナノ粒子からの室温量子発光

Castelletto, S.*; Johnson, B. C.*; Zachreson, C.*; Beke, D.*; Balogh, I.*; 大島 武; Aharonovich, I.*; Gali, A.*

Castelletto, S.*; Johnson, B. C.*; Zachreson, C.*; Beke, D.*; Balogh, I.*; Oshima, Takeshi; Aharonovich, I.*; Gali, A.*

Single Photon Sources (SPSs) in cubic (3C) Silicon Carbide (SiC) Nano Particles (NPs) were investigated. As a result, photo luminescence (PL) with broad emission at wavelength ranges between 600 and 800 nm was observed from 3C-SiC NPs at room temperature. The second order photon auto-correlation measurements revealed that defect with the PL characteristic is SPSs. The intensity and stability of the PL increased when samples were irradiated with electrons and subsequently annealed at 500 C. From PL measurements at low temperature and theoretical analysis using spin-polarized density functional theory, the defect can be identified as carbon-antisite carbon-vacancy pair (CV).