検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors

結晶欠陥による4H-SiCショットキーバリアダイオード粒子検出器の特性劣化

岩本 直也; Johnson, B. C.; 星乃 紀博*; 伊藤 雅彦*; 土田 秀一*; 児島 一聡*; 大島 武

Iwamoto, Naoya; Johnson, B. C.; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; Oshima, Takeshi

A correlation between radiation induced defects and charge collection performance of 4H-SiC Schottky barrier diodes has been studied. Charge collection efficiency (CCE) of the detectors is degraded by irradiation with 1 MeV electrons to a fluence of 1$$times10^{15}$$ cm$$^{-2}$$. Three electron traps, labeled EH$$_1$$, Z$$_{1/2}$$ and EH$$_3$$, are observed after the electron irradiation by deep level transient spectroscopy. Low temperature annealing at 300 $$^circ$$C is found to recover CCE significantly and remove EH$$_1$$ and EH$$_3$$ completely. On the other hand, Z$$_{1/2}$$ is not removed by annealing up to 400 $$^{circ}$$C, and does not correlate the annealing behavior of CCE. Therefore, we conclude that EH$$_1$$ and EH$$_3$$ are more responsible for the degraded CCE than Z$$_{1/2}$$.

Access

:

- Accesses

InCites™

:

パーセンタイル:77.95

分野:Physics, Applied

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.