Solid phase epitaxy in Si and Ge

Si及びGe中の固相エピタキシャル成長

Johnson, B. C.; 大島 武; McCallum, J. C.*

Johnson, B. C.; Oshima, Takeshi; McCallum, J. C.*

Solid phase epitaxy (SPE) is an important process used to activate dopants on a low thermal budget in Si and Ge device fabrication. The enhancement of the SPE rate by the presence of dopants is well described by a Fermi level effect as encapsulated by the generalized Fermi level shifting (GFLS) model. Dopant dependent deviations from the model have recently been attributed to dopant-induced lattice strain in the plane of growth. Here, data is presented over a broad range of dopant concentrations and SPE anneal temperatures in both Si and Ge including new results in Sb doped Ge. Although an active Sb concentration above the solubility limit is achieved a significant portion of the implanted atoms are not. Theoretical predictions using a simple form of the generalized Fermi level shifting model which incorporates both dopant and dopant-induced stress effects is shown to agree well with all data. A single set of two parameters are determined which describe the dopant enhanced SPE data well independent of dopant species and concentration.