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Suppression of $$f$$-electron itinerancy in CeRu$$_2$$Si$$_2$$ by a strong magnetic field

強磁場によるCeRu$$_2$$Si$$_2$$$$f$$電子遍歴性の抑制

松田 康弘*; 中村 俊幸*; Her, J. L.*; 道村 真司*; 稲見 俊哉; 金道 浩一*; 海老原 孝雄*

Matsuda, Yasuhiro*; Nakamura, Toshiyuki*; Her, J. L.*; Michimura, Shinji*; Inami, Toshiya; Kindo, Koichi*; Ebihara, Takao*

典型的な重い電子系物質であるCeRu$$_2$$Si$$_2$$におけるCeの価数状態を1.8Kで40Tまでの強磁場下で放射光X線吸収分光法から研究した。価数は重い電子状態から予想されるように3価よりわずかに大きく、磁場の印加に伴い3価へ向かって減少した。磁場誘起の価数減少はCeRu$$_2$$Si$$_2$$中の4$$f$$電子の遍歴性が強磁場によって抑制されたことを示している。抑制は緩やかでかつ8T近傍のメタ磁性転移を反映して特徴的な磁場依存性を示した。

The valence state of Ce in a typical heavy fermion compound CeRu$$_2$$Si$$_2$$ has been investigated by synchrotron X-ray absorption spectroscopy at 1.8 K in high magnetic fields of up to 40T. The valence was slightly larger than for the pure trivalent state, as expected in heavy fermion compounds, and it decreased toward the trivalent state as the magnetic field was increased. The field-induced valence reduction indicates that the itinerant character of the 4$$f$$ electrons in CeRu$$_2$$Si$$_2$$ was suppressed by a strong magnetic field. The suppression was gradual and showed a characteristic magnetic field dependence, which reflects the metamagnetism around $$H_{rm m}$$ $$sim$$ 8T.

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パーセンタイル:41.97

分野:Materials Science, Multidisciplinary

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