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Electrically detected magnetic resonance study on hydrogen depassivation from C-face interface defects in 4H-SiC(000$$bar{1}$$) metal-oxide-semiconductor field effect transistors

Arai, Ryo*; Umeda, Takahide*; Sato, Yoshihiro*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

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