Degradation of I-V characteristics of SiC-MOSFET caused by rays from Co-60

Yokoseki, Takashi*; Tanaka, Kazuya*; Fujita, Natsuko ; Makino, Takahiro; Onoda, Shinobu; Oshima, Takeshi; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*

no abstracts in English

Language	:	Japanese
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Meeting title	:	SiC及び関連半導体研究第22回SiC講演会
Held date	:	2013/12
Location (city)	:	さいたま
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	コバルト60照射施設
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Registration No. : BB20132439
JAEA Abstracts No. :
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