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Evidence of electronic polarization of the As ion in the superconducting phase of F-doped LaFeAsO

フッ素ドープLaFeAsOの超伝導相におけるヒ素イオンの電子分極の証拠

Kim, J.*; 藤原 明比古*; 澤田 智弘*; Kim, Y.*; 杉本 邦久*; 加藤 健一*; 田中 宏志*; 石角 元志*; 社本 真一; 高田 昌樹*

Kim, J.*; Fujiwara, Akihiko*; Sawada, Tomohiro*; Kim, Y.*; Sugimoto, Kunihisa*; Kato, Kenichi*; Tanaka, Hiroshi*; Ishikado, Motoyuki*; Shamoto, Shinichi; Takata, Masaki*

放射光X線粉末回折データをもとに、電子密度解析を行い、低温でLaFeAsO$$_{1-x}$$F$$_{x}$$の超伝導相の鉄層にのみ電子が集まっていることが見つかった。静電ポテンシャル分布解析の結果、ヒ素イオンの電子分極が協調的に増強され、電荷の再配列が起こっていた。

Using a charge density analysis based on synchrotron radiation X-ray powder diffraction data, we found that the charge carriers only accumulated in the iron layer of the superconducting phase of LaFeAsO$$_{1-x}$$F$$_{x}$$ at low temperatures. Analysis of the electrostatic potential distribution revealed the concerted enhancement of the electronic polarization of the As ions and the carrier redistribution.

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パーセンタイル:70.18

分野:Chemistry, Multidisciplinary

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