Stability of the electrical characteristics of SiC-MOSFETs irradiated with -rays

Yokoseki, Takashi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Oshima, Takeshi; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*

no abstracts in English

Language	:	Japanese
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Meeting title	:	2014年秋季第75回応用物理学会学術講演会
Held date	:	2014/09
Location (city)	:	札幌
Location (country)	:	日本
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Keywords	:	ガンマ線照射; SiC MOSFET; 耐放射線性; I-V特性; しきい値電圧
Research Facility	:	コバルト60照射施設
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Cooperating Institute	:	埼玉大学

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Registration No. : BB20141718
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