Identification of structures of the deep levels in 4H-SiC

4H-SiC中の深い準位の構造の同定

中根 浩貴*; 加藤 正史*; 市村 正也*; 大島 武

Nakane, Hiroki*; Kato, Masashi*; Ichimura, Masaya*; Oshima, Takeshi

Annealing behavior of the carrier lifetime and the deep levels in electron irradiated n-type and semi-insulating hexagonal (4H) silicon carbide (SiC) was studied. As a result of photo induced current transient spectroscopy (PICTS) measurements, two peaks were observed for each sample. The height of those peaks depended on annealing temperature. Comparing the annealing behavior of the peak height with temperature dependence of concentrations of various defects reported previously, we speculated that the observed peaks originate from either divacancy of silicon vacancy and carbon vacancy (VV) or pair of carbon antisite and carbon vacancy (CV).