Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed synchrotron X-ray diffraction
高速その場放射光X線回折によって測定されたGaN/SiC(0001)の特異的な格子変形現象
佐々木 拓生; 石川 史太郎*; 高橋 正光
Sasaki, Takuo; Ishikawa, Fumitaro*; Takahashi, Masamitsu
We report an anomalous lattice deformation of GaN layers grown on SiC(0001) by molecular beam epitaxy. The evolution of the lattice parameters during the growth of the GaN layers was measured by in situ synchrotron X-ray diffraction. The lattice parameters in the directions parallel and normal to the surface showed significant deviation from the elastic strains expected for lattice-mismatched films on substrates up to a thickness of 10 nm. The observed lattice deformation was well explained by the incorporation of hydrostatic strains due to point defects. The results indicate that the control of point defects in the initial stage of growth is important for fabricating GaN-based optoelectronic devices.
- 登録番号 : AA20150769
- 抄録集掲載番号 : 44000180
- 論文投稿番号 : 16869
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