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Ion induced modifications of Mn-doped ZnO films

マンガン添加酸化亜鉛薄膜のイオン照射改質

松波 紀明*; Ito, M.*; Kato, M.*; 岡安 悟; 左高 正雄*; 垣内田 洋*

Matsunami, Noriaki*; Ito, M.*; Kato, M.*; Okayasu, Satoru; Sataka, Masao*; Kakiuchida, Hiroshi*

マンガンを6%添加した酸化亜鉛薄膜を室温で100MeVキセノンイオンで照射し、X線回折(XRD)による原子構造や光学吸収,電気抵抗,磁化率測定といった物性にどのような変化が現れるか調べた。XRDの強度は照射量5$$times$$10$$^{14}$$ cm$$^{-2}$$まで単調に減少し、未照射試料の1/50になった。バンドギャップはほとんど変化しないが($$<$$ 0.02eV)、電気抵抗は4桁減少した。電気抵抗の変化でいえば、低エネルギーイオン照射(100keVネオンまたは窒素)に比べ変化の度合いが大きい。磁化率($$chi$$)の温度依存性はキュリー則に従い$$chi$$ = $$chi$$$$_{o}$$ + C/Tとなり常磁性を示す。キュリー定数Cは照射によって照射量10$$^{12}$$ cm$$^{-2}$$で未照射の値(C$$_{O}$$=0.012emu cm$$^{-3}$$ K)の半分まで減少した。

We have studied ion impact effects on atomic structure in terms of X-ray diffraction (XRD), optical absorption and electrical resistivity of Mn (6%)-doped ZnO films under 100 MeV Xe ion impact at room temperature. We find the monotonic reduction of the XRD intensity to 1/50 of that of unirradiated film at 5 $$times$$10$$^{14}$$ cm$$^{-2}$$, little bandgap change ($$<$$0.02 eV) and decrease of the resistivity by 4 order of magnitude. The resistivity modification has been compared with that by irradiations of low energy ions such as 100 keV Ne and N, which show more effective decrease of resistivity. We also find that temperature (T) dependence of the magnetic susceptibility ($$chi$$) of Mn-doped ZnO follows the Curie law: $$chi$$ = $$chi$$$$_{o}$$ + C/T (i.e., paramagnetic) and the Curie constant C decreases to a half of that before irradiation (C$$_{O}$$ = 0.012 emu cm$$^{-3}$$ K) at 100 MeV Xe ion fluence of 10$$^{12}$$ cm$$^{-2}$$.

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パーセンタイル:81.41

分野:Instruments & Instrumentation

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