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Angle-resolved photoemission analysis of electronic structures for thermoelectric properties of off-stoichiometric Fe$$_{2-x}$$V$$_{1+x}$$Al alloys

非化学量論組成Fe$$_{2-x}$$V$$_{1+x}$$Alの角度分解光電子分光による電子状態解析

曽田 一雄*; 原田 翔太*; 林 利光*; 加藤 政彦*; 石川 文洋*; 山田 裕*; 藤森 伸一; 斎藤 祐児

Soda, Kazuo*; Harada, Shota*; Hayashi, Toshimitsu*; Kato, Masahiko*; Ishikawa, Fumihiro*; Yamada, Yu*; Fujimori, Shinichi; Saito, Yuji

The electronic states of Heusler(L21)-type off-stoichiometric Fe$$_{2-x}$$V$$_{1+x}$$Al have been investigated by soft X-ray angle-resolved photoelectron spectroscopy (ARPES) in order to clarify the origin of their large thermoelectric powers, which cannot be explained in terms of the rigid band model. In off-normal and normal ARPES, Fe$$_{2.05}$$V$$_{0.95}$$Al shows a weakly dispersive bulk band around the binding energy of 0.3 eV in the $$Gamma$$-X direction and an almost dispersion-less one around 0.3 eV in a gap of dispersive bulk bands in the $$Gamma$$-L direction, which is attributed to the anti-site Fe defect. At the $$Gamma$$ point, the bulk band does not appear to cross the Fermi level $$E_{rm F}$$, consistent with the rigid band model for the excess Fe content bringing about the increase in the valence electrons, but no band crossing $$E_{rm F}$$ down is found at the X point. The anti-site Fe defect states near $$E_{rm F}$$ might push up the band at the X point and cause the p-type thermoelectric properties, unexpected with the rigid band picture. The change in the electronic structures and thermoelectric properties are discussed on the off-stoichiometry and substitution of the forth element.

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パーセンタイル:78.12

分野:Materials Science, Multidisciplinary

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