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Report No.
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Gamma radiation resistance of spin Seebeck devices

Yagmur, A.*; Uchida, Kenichi*; Ihara, Kazuki*; Ioka, Ikuo; Kikkawa, Takashi*; Ono, Madoka*; Endo, Junichi*; Kashiwagi, Kimiaki*; Nakashima, Tetsuya*; Kirihara, Akihiro*; Ishida, Masahiko*; Saito, Eiji*

Thermoelectric devices based on the spin Seebeck effect (SSE) were irradiated with gamma ($$gamma$$) rays with the total dose of around 3$$times$$10$$^{5}$$ Gy in order to investigate the $$gamma$$-radiation resistance of the devices. To demonstrate this, Pt/Ni$$_{0.2}$$Zn$$_{0.3}$$Fe$$_{2.5}$$O$$_{4}$$/Glass and Pt/Bi$$_{0.1}$$Y$$_{2.9}$$Fe$$_{5}$$O$$_{12}$$/Gd$$_{3}$$Ga$$_{5}$$O$$_{12}$$ SSE devices were used. We confirmed that the thermoelectric, magnetic, and structural properties of the SSE devices are not affected by the $$gamma$$-ray irradiation. This result demonstrates that SSE devices are applicable to thermoelectric generation even in high radiation environments.

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Category:Physics, Applied

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