Gamma radiation resistance of spin Seebeck devices

Yagmur, A.*; Uchida, Kenichi*; Ihara, Kazuki*; Ioka, Ikuo ; Kikkawa, Takashi*; Ono, Madoka*; Endo, Junichi*; Kashiwagi, Kimiaki*; Nakashima, Tetsuya*; Kirihara, Akihiro*; Ishida, Masahiko*; Saito, Eiji*

Thermoelectric devices based on the spin Seebeck effect (SSE) were irradiated with gamma () rays with the total dose of around 310 $^{5}$ Gy in order to investigate the -radiation resistance of the devices. To demonstrate this, Pt/Ni $_{0.2}$ Zn $_{0.3}$ Fe $_{2.5}$ O $_{4}$ /Glass and Pt/Bi $_{0.1}$ Y $_{2.9}$ Fe $_{5}$ O $_{12}$ /Gd $_{3}$ Ga $_{5}$ O $_{12}$ SSE devices were used. We confirmed that the thermoelectric, magnetic, and structural properties of the SSE devices are not affected by the -ray irradiation. This result demonstrates that SSE devices are applicable to thermoelectric generation even in high radiation environments.

Language	:	English
Journal	:	Applied Physics Letters
Volume	:	109
Number	:	24
Pages	:	p.243902_1 - 243902_4
Publication Year/Month	:	2016/12
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Paper URL	:	https://doi.org/10.1063/1.4971976
DOI for research data	:
Keywords	:	Spin Seebeck device; gamma rays; Thermoelectric Properties; Magnetic Properties
Research Facility	:	コバルト60照射施設
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Registration No. : AA20160429
JAEA Abstracts No. : 45000239
Paper Submission No. : 18556

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