Dispersion-type Hall resistance in InSbPt hybrid systems

InSbPt積層系における分散型のHall抵抗

塩見 雄毅*; 齊藤 英治

Shiomi, Yuki*; Saito, Eiji

In nonmagnetic semiconductors and metals, most of Hall resistance exhibits a linear dependence with applied magnetic fields. In this work, by combining conduction in a metal and a semiconductor under external magnetic fields, we realize a dispersion-type magnetic-field dependence of Hall resistance. The dispersion-type Hall resistance appears in a broad temperature range below 150K, where quantum linear magnetoresistance is noticeable in the semiconductor substrate. This unconventional Hall response in metalsemiconductor hybrid systems is explained by a change in dominant conduction from the semiconductor to the metal with increasing magnetic field strength.