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Steam oxidation of silicon carbide at temperatures above 1600$$^{circ}$$C

Pham, V. H.; 永江 勇二; 倉田 正輝

Pham, V. H.; Nagae, Yuji; Kurata, Masaki

High temperature interaction of chemical vapor deposition SiC with steam was investigated at 1700-1800$$^{circ}$$C for 0.1-3 h in a mixture of steam and argon gas containing 98% of steam at 1 atm. At the investigated conditions, although a dense oxide layer was observed on sample surface, significant mass loss of SiC occurred. Below 1700$$^{circ}$$C, the oxidation kinetics seems to follow the para-linear laws. The apparent activation calculated based on the data of this study is to be 370 kJ/mol. Rapid degradation and bubbling of SiC at 1800$$^{circ}$$C were observed after 1 h oxidation. This suggested that chemical interaction behaviours above 1700$$^{circ}$$C might be changed due to the liquefaction of silica.

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