Oxidation kinetics of silicon carbide in steam at temperature range of 1400 to 1800C studied by laser heating

Pham, V. H.   ; 永江 勇二 ; 倉田 正輝 ; Bottomley, D.; 古本 健一郎*

Pham, V. H.; Nagae, Yuji; Kurata, Masaki; Bottomley, D.; Furumoto, Kenichiro*

As expected for accident tolerant fuels, investigation of steam oxidation for silicon carbide under the conditions beyond design basis accident scenarios is needed. Many studies focused on steam oxidation of SiC at temperatures up 1600C have been conducted and reported in the literature. However, behavior of SiC in steam at temperatures above 1600C still remains unclear. To complete this task, we have designed and manufactured a laser heating facility for steam oxidation at extreme temperatures. With the facility, we report the first results on the steam oxidation behavior of SiC at temperatures range of 1400-1800C for short term exposure of 1-7 h under atmospheric pressure. Based on the mass change of SiC samples, parabolic oxidation rate and linear volatilization rate were calculated. The oxidation layer appears to be maintained at 1800C in steam, but the bubble formation phenomenon suggests other volatilization reactions may limit its life.