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Longitudinal strain of epitaxial graphene monolayers on SiC substrates evaluated by $$z$$-polarization Raman microscopy

z偏光ラマン分光法によるSiC基板上のエピタキシャル単層グラフェンの歪みの評価

齊藤 結花*; 常磐 拳志郎*; 近藤 崇博*; Bao, J.*; 寺澤 知潮; 乗松 航*; 楠 美智子*

Saito, Yuika*; Tokiwa, Kenshiro*; Kondo, Takahiro*; Bao, J.*; Terasawa, Tomoo; Norimatsu, Wataru*; Kusunoki, Michiko*

Longitudinal strains in epitaxial monolayer graphene (EMG) grown on SiC substrates were evaluated by $$z$$-polarization Raman microscopy. Due to the covalent bonds formed at the interface between graphene and the substrate, strong compressive strains were loaded on the EMG, which were sensitively detected by Raman spectroscopy. Our polarization Raman microscope was specially designed for evaluating the longitudinal ($$z$$-polarization) strain, as well as the lateral ($$xy$$-polarization). $$Z$$-polarization Raman microscopy revealed the relationship between the fluctuation of the local strains and the sample morphology in the SiC-graphene through submicron spatial resolution mapping. The amount of strain estimated through Raman shift and its spatial inhomogeneity have critical influence on the mobility of electrons, which are essential for future device applications of EMG.

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