Electric field effect on the magnetic domain wall creep velocity in Pt/Co/Pd structures with different Co thicknesses

異なるCo膜厚を用いたPt/Co/Pt構造での磁壁クリープ速度に対する電界効果

小山 知弘*; 家田 淳一   ; 千葉 大地*

Koyama, Tomohiro*; Ieda, Junichi; Chiba, Daichi*

The electric field (EF) modulation of magnetic domain wall (DW) creep velocity in Pt/Co/Pd structure with perpendicular magnetic anisotropy (MA) has been studied. The structures with different Co thickness up to nm are investigated. In all samples, applying a gate voltage induces a clear change in . Thicker samples provide a higher modulation efficiency, and the modulation magnitude of more than a factor of 100 times is observed in the thickest of 0.98 nm. The parameter characterizing the creep motion is significantly affected by the EF, resulting in the modulation of . Unlike the case, the MA modulation efficiency decreases with increasing . The present results are discussed based on the EF-induced change in the interfacial Dzyaloshinskii-Moriya interaction (iDMI), which has been recently demonstrated in the same structure, and dependence of the DW energy. The dependence of the modulation suggests that the EF effect on the iDMI is more important than the MA.