Distinct variation of electronic states due to annealing in -type LaEuCuO and NdCuO

アニールによるタイプ銅酸化物LaEuCuO及びNdCuOの電子状態変化

浅野 駿*; 石井 賢司*; 松村 大樹   ; 辻 卓也  ; 工藤 康太*; 谷口 貴紀*; 齋藤 真*; 春原 稔樹*; 川股 隆行*; 小池 洋二*; 藤田 全基*

Asano, Shun*; Ishii, Kenji*; Matsumura, Daiju; Tsuji, Takuya; Kudo, Kota*; Taniguchi, Takanori*; Saito, Shin*; Sunohara, Toshiki*; Kawamata, Takayuki*; Koike, Yoji*; Fujita, Masaki*

We performed Cu K-edge X-ray absorption fine-structure measurements on -type LaEuCuO (LECO) and NdCuO (NCO) to investigate the variation in the electronic state associated with the emergence of superconductivity due to annealing. The X-ray absorption near-edge structure spectra of as-sintered (AS) LECO are quite similar to those of AS NCO, indicating that the ground state of AS LECO is a Mott insulator. The electron density after annealing was evaluated for both superconducting LECO and nonsuperconducting NCO and was found to be 0.40 and 0.05 electron per Cu atom, respectively. In LECO but not in NCO, extended X-ray absorption fine-structure analysis revealed a reduction in the strength of the Cu-O bond in the CuO plane due to annealing, which is consistent with the screening effect on phonons in the metallic state. The origin of the difference in doping processes due to annealing is discussed in relation to the size of the charge-transfer gap.