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論文

The Physical origin of the InSb(111)A surface reconstruction transient

Proessdorf, A.*; Rodenbach, P.*; Grosse, F.*; Hanke, M.*; Braun, W.*; Riechert, H.*; Hu, W.; 藤川 誠司*; 神津 美和; 高橋 正光

Surface Science, 606(17-18), p.1458 - 1461, 2012/09

https://doi.org/10.1016/j.susc.2012.05.017
 被引用回数：1 パーセンタイル：5.01(Chemistry, Physical)

The InSb(111)A surface is prepared by molecular beam epitaxy and investigated by reflection high-energy electron diffraction (RHEED). The complete two dimensional diffraction pattern is mapped out by azimuthal RHEED (ARHEED). Two reconstructions are identified and additionally a set of new symmetries is observed. At low temperature a $$(2sqrt{3}times 2sqrt{3})$$ pattern is observed which changes to the $$(2times 2)$$ pattern at high temperature. In contrast to the GaSb(111)A surface the observed $$(2sqrt{3}times 2sqrt{3})$$ structure is not stabilized by configurational entropy.

論文

GaSb(001) surface reconstructions measured at the growth front by surface X-ray diffraction

Tinkham, B. P.*; Romanyuk, O.*; Braun, W.*; Ploog, K. H.*; Grosse, F.*; 高橋 正光; 海津 利行*; 水木 純一郎

Journal of Electronic Materials, 37(12), p.1793 - 1798, 2008/12

https://doi.org/10.1007/s11664-008-0557-6
 被引用回数：4 パーセンタイル：30.89(Engineering, Electrical & Electronic)

Surface X-ray diffraction was employed, ${it in situ}$, to measure the GaSb(001)-(1$$times$$5) and (1$$times$$3) surface phases under technologically relevant growth conditions. We measured a large set of fractional-order in-plane diffraction peaks arising from the superstructure of the surface reconstruction. For the (1$$times$$3) phase we obtained good agreement between our data and the $$beta$$(4$$times$$3) model proposed in recent experimental and theoretical work. Our measurements on the Sb-rich (1$$times$$5) phase provide evidence that the structure under growth conditions is, in fact, different from that of the models previously suggested on the basis of scanning tunneling microscopy (STM). We discuss reasons for this discrepancy as well as the identified structural elements for these reconstructions, which include surface relaxations and subsurface rearrangement.

論文

As-rich InAs(001)-(2$$times$$4) phases investigated by ${it in situ}$ surface X-ray diffraction

Tinkham, B. P.*; Braun, W.*; Ploog, K. H.*; 高橋 正光; 水木 純一郎; Grosse, F.*

Journal of Vacuum Science and Technology B, 26(4), p.1516 - 1520, 2008/07

https://doi.org/10.1116/1.2918314
 被引用回数：3 パーセンタイル：26.1(Engineering, Electrical & Electronic)

Surface X-ray diffraction has been employed, in situ, to measure InAs(001)-(2$$times$$4) surface phases under technologically relevant growth conditions. For the As-rich (2$$times$$4) phase, the authors obtain good agreement between the data and the $$beta$$2(2$$times$$4) surface reconstruction model. Comparison of our measurements on the (2$$times$$4) phase measured close to the metal-rich phase transition to models from density functional theory suggests a mixture of $$alpha$$2(2$$times$$4) and $$beta$$2(2$$times$$4) surface structures present on the surface.

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