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論文

Retreat from stress; Rattling in a planar coordination

末國 晃一郎*; Lee, C. H.*; 田中 博己*; 西堀 英治*; 中村 篤*; 笠井 秀隆*; 森 仁志*; 臼井 秀知*; 越智 正之*; 長谷川 巧*; et al.

Advanced Materials, 30(13), p.1706230_1 - 1706230_6, 2018/03

 被引用回数:6 パーセンタイル:13.58(Chemistry, Multidisciplinary)

高性能デバイスとしての熱電材料には、高い電気伝導度と低い熱伝導度という相反する要求を同時に満たす必要がある。本研究では、テトラへドライト(Cu,Zn)$$_{12}$$(Sb,As)$$_{4}$$S$$_{13}$$の結晶構造とフォノンダイナミクスを調べ、平面内に配位している銅原子のラットリング運動がフォノンを効率良く散乱することを見出した。これらの知見は、平面配位構造を有する高性能熱電材料の新たな開発指針を与えるものである。

論文

Electronic structure of Pt and Pt-Co nanoparticles with O$$_{2}$$ and O$$_{2}$$/H$$_{2}$$O adsorption revealed by in situ XAFS and hard X-ray photoelectron spectroscopy

Cui, Y.*; 原田 慈久*; 畑中 達也*; 中村 直樹*; 安藤 雅樹*; 吉田 稔彦*; 池永 英司*; 石井 賢司*; 松村 大樹; Li, R.*; et al.

ECS Transactions, 72(8), p.131 - 136, 2016/10

 被引用回数:1 パーセンタイル:32.99

The electronic structures of Pt and Pt-Co nanoparticles with O$$_{2}$$ adsorption and O$$_{2}$$/H$$_{2}$$O co-adsorption were investigated by in situ hard X-ray photoelectron spectroscopy (HAXPES) and in situ high resolution fluorescence detection X-ray absorption spectroscopy (HERFD-XAS) to clarify the effects of water adsorption on fuel cell cathode catalysis surface. The experimental results suggest that under the pressure of 1 mbar, the adsorption of H$$_{2}$$O hinders the successive O$$_{2}$$ adsorption on Pt surface, while under the pressure of 1 bar, the adsorption of H$$_{2}$$O enhances the adsorption of O$$_{2}$$ on Pt surface. This water effect is found to be more significant on Pt surface than on Pt-Co surface. These results would be helpful to understand how the water affects the fuel cell performance and why Pt-Co nanoparticles show higher oxygen reduce reaction (ORR) activity than Pt nanoparticles.

論文

Superdeformation in $$^{35}$$S

郷 慎太郎*; 井手口 栄治*; 横山 輪*; 小林 幹*; 木佐森 慶一*; 高木 基伸*; 宮 裕之*; 大田 晋輔*; 道正 新一郎*; 下浦 享*; et al.

JPS Conference Proceedings (Internet), 6, p.030005_1 - 030005_4, 2015/06

The high-spin states in $$^{35}$$S were investigated at Tandem-ALTO facility in Institut de Physique Nucl$'e$aire d'Orsay The $$^{26}$$Mg($$^{18}$$O, 2$$alpha$$1n)$$^{35}$$S fusion evaporation reaction was used to populate high-spin states in $$^{35}$$S. The germanium $$gamma$$-ray detector array ORGAM was employed to measure $$gamma$$ rays from high-spin states and charged particles evaporated from the compound nuclei were detected by a segmented silicon detector, Si-Ball. A level scheme for $$^{35}$$S was deduced based on the gamma-gamma-coincidence analysis and $$gamma$$-ray angular correlation analysis. The half-life of the transition in the superdeformed band was estimated by measuring the residual Doppler shift. The deduced half-life shows the large collectivity of the band.

論文

Analysis on effects of transverse electric field in an injector cavity of compact-ERL at KEK

Hwang, J.-G.*; Kim, E.-S.*; 宮島 司*; 本田 洋介*; 原田 健太郎*; 島田 美帆*; 高井 良太*; 久米 達哉*; 長橋 進也*; 帯名 崇*; et al.

Nuclear Instruments and Methods in Physics Research A, 753, p.97 - 104, 2014/07

 被引用回数:3 パーセンタイル:61.51(Instruments & Instrumentation)

For a future synchrotron light source based on a linac, e.g. an X-ray free electron laser and an energy recovery linac (ERL), an injector is a key component to generate a high brightness electron beam. For the acceleration and transportation of the electron beam in the injector, the adjustment of beam orbit inside the cavity is important to avoid the deterioration of the beam quality due to the transverse electric field of it, which causes the transverse emittance growth. To adjust the beam orbit, an investigation of the electromagnetic center of the cavity is required in the beam operation. This paper shows a new method for measuring the electromagnetic center of the cavity, and describes an analytical model of emittance growth due to a combination of transverse electric field and orbit offset. The validation of the method was confirmed by the emittance measurement in the compact ERL (cERL) injector at KEK.

論文

Simulation of VDE under intervention of vertical stability control and vertical electromagnetic force on the ITER vacuum vessel

宮本 斉児; 杉原 正芳*; 新谷 吉郎*; 中村 幸治*; 利光 晋一*; Lukash, V. E.*; Khayrutdinov, R. R.*; 杉江 達夫; 草間 義紀; 芳野 隆治*

Fusion Engineering and Design, 87(11), p.1816 - 1827, 2012/11

 被引用回数:9 パーセンタイル:29.05(Nuclear Science & Technology)

Vertical displacement events (VDEs) and disruptions usually take place under intervention of vertical stability (VS) control and the vertical electromagnetic force induced on vacuum vessels is potentially influenced. This paper presents assessment of the force that arises from the VS control in ITER VDEs using a numerical simulation code DINA. The focus is on a possible malfunctioning of the VS control circuit: radial magnetic field is unintentionally applied to the direction of enhancing the vertical displacement further. Since this type of failure usually causes the largest forces (or halo currents) observed in the present experiments, this situation must be properly accommodated in the design of the ITER vacuum vessel. DINA analysis shows that although the VS control modifies radial field, it does not affect plasma motion and current quench behavior including halo current generation because the vacuum vessel shields the field created by the VS control coils. Nevertheless, the VS control modifies the force on the vessel by directly acting on the eddy current carried by the conducting structures of the vessel. Although the worst case was explored in a range of plasma inductance and pattern of VS control, the result confirmed that the force is still within the design margin.

論文

Superdeformed band in asymmetric N $$>$$ Z nucleus, $$^{40}$$Ar and high-spin states in A = 30 $$sim$$ 40 nuclei

井手口 栄治*; 太田 晋輔*; 森川 恒安*; 大島 真澄; 小泉 光生; 藤 暢輔; 木村 敦; 原田 秀郎; 古高 和禎; 中村 詔司; et al.

Progress of Theoretical Physics Supplement, (196), p.427 - 432, 2012/10

A rotational band with five cascade $$gamma$$-ray transitions was newly found in $$^{40}$$Ar. The deduced transition quadrupole moment of $$1.45^{+0.49}_{-0.31}$$ eb has demonstrated this band as having a superdeformed shape of $$beta_2 sim$$ 0.5. The structure of the band was discussed in the framework of cranked Hartree-Fock-Bogoliubov calculations and the assignment of multiparticle-multihole configuration has been made.

論文

Spin-current-driven thermoelectric coating

桐原 明宏*; 内田 健一*; 梶原 瑛祐*; 石田 真彦*; 中村 泰信*; 眞子 隆志*; 齊藤 英治; 萬 伸一*

Nature Materials, 11(8), p.686 - 689, 2012/08

 被引用回数:153 パーセンタイル:1.36(Chemistry, Physical)

Energy harvesting technologies, which generate electricity from environmental energy, have been attracting great interest because of their potential to power ubiquitously deployed sensor networks and mobile electronics. Of these technologies, thermoelectric (TE) conversion is a particularly promising candidate, because it can directly generate electricity from the thermal energy that is available in various places. Here we show a novel TE concept based on the spin Seebeck effect, called "spin-thermoelectric (STE) coating", which is characterized by a simple film structure, convenient scaling capability, and easy fabrication. The STE coating, with a 60-nm-thick bismuth-substituted yttrium iron garnet (Bi:YIG) film, is applied by means of a highly efficient process on a non-magnetic substrate. Notably, spin-current-driven TE conversion is successfully demonstrated under a temperature gradient perpendicular to such an ultrathin STE-coating layer (amounting to only 0.01% of the total sample thickness). We also show that the STE coating is applicable even on glass surfaces with amorphous structures. Such a versatile implementation of the TE function may pave the way for novel applications making full use of omnipresent heat.

論文

Engineering design of contact-type liquid level sensor for measuring thickness validation of liquid lithium jet in IFMIF/EVEDA lithium test loop

金村 卓治; 近藤 浩夫; 鈴木 幸子*; 帆足 英二*; 山岡 信夫*; 堀池 寛*; 古川 智弘; 井田 瑞穂; 中村 和幸; 松下 出*; et al.

Fusion Science and Technology, 62(1), p.258 - 264, 2012/07

 被引用回数:4 パーセンタイル:55.75(Nuclear Science & Technology)

本論文は、核融合炉候補材料の中性子照射試験施設である国際核融合材料照射施設(IFMIF)の研究開発にかかわるものである。現在幅広いアプローチ(BA)活動の1つである、IFMIFの工学実証・工学設計活動(EVEDA)プロジェクトが日欧協力で進められている。本プロジェクトの枠組みで大洗研究開発センターに製作されたEVEDA液体Li試験ループ(ELTL)は、Liターゲットの安定性評価等に供する。ELTLにおいて、Liターゲットを模擬した液体Li噴流の表面変動の計測に供する機器として、触針式液面計を開発した。本液面計は、触針と液面との接触を電圧降下として検知し、噴流の平均厚さや振幅の分布などの変動特性を取得するものである。開発の要点は、10$$^{-3}$$Paの真空下で触針を0.1mmの分解能、0.01mmの位置決め精度で動作させることである。この条件を満たすため、モーメント荷重とセンサーの自重荷重を計算し、その計算結果に基づいて、装置内外での1気圧の差圧に耐えて位置決めできるモータと摩擦を低減したボールねじを選定し、強固な構造を適用することとした。以上の結果、所定の性能を満たす設計を完了した。

論文

Gate stack technologies for silicon carbide power MOS devices

細井 卓治*; 桐野 嵩史*; 上西 悠介*; 池口 大輔*; Chanthaphan, A.*; 吉越 章隆; 寺岡 有殿; 箕谷 周平*; 中野 佑紀*; 中村 孝*; et al.

Workshop digest of 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), p.22 - 25, 2012/06

SiC is a promising material for high-power electronic devices. Although SiO$$_{2}$$ film can be grown on SiC by thermal oxidation, low channel mobility and poor gate oxide reliability are the critical issues for SiC power MOSFETs. In this work, we investigated the fundamental aspects of thermally-grown SiO$$_{2}$$/4H-SiC structures such as an energy band alighnment and flatband voltage instability. Both electrical characterization and XPS study revealed that a conduction band offset between SiO$$_{2}$$ and SiC is extrinsically increased. High temperature annealing in H$$_{2}$$ could passivate mobile ions existing in as-oxidized SiO$$_{2}$$/SiC structures. Post-oxidation annealing in Ar eliminates the mobile ions, but they are generated again by subsequent high-temperature hydrogen annealing. These features were not observed for SiO$$_{2}$$/Si structures, and thus considered to be inherent to thermally grown SiO$$_{2}$$/SiC structures.

論文

Synchrotron radiation photoelectron spectroscopy study of thermally grown oxides on 4H-SiC(0001) Si-face and (000-1) C-face substrates

渡部 平司*; 細井 卓治*; 桐野 嵩史*; 上西 悠介*; Chanthaphan, A.*; 吉越 章隆; 寺岡 有殿; 箕谷 周平*; 中野 佑紀*; 中村 孝*; et al.

Materials Science Forum, 717-720, p.697 - 702, 2012/05

 被引用回数:1 パーセンタイル:30.63

We investigated the interface between oxide and 4H-SiC(0001) Si-face or (000-1) C-face by synchrotron radiation photoelectron spectroscopy. The Si 2p$$_{3/2}$$ spectra were fitted with bulk SiC and SiO$$_{2}$$ together with intermediate oxides (Si$$^{1+}$$, Si$$^{2+}$$, Si$$^{3+}$$). The total amount of intermediate states was sufficiently small compared with that of the remaining oxides. This implies that the transition layer in the oxide is as thin as a few atomic layers. Moreover, the chemical composition in the bulk region was found to be almost identical to that of the initial SiC surface. These results indicate formation of a near-perfect SiO$$_{2}$$/SiC interface.

論文

Impact of interface defect passivation on conduction band offset at SiO$$_{2}$$/4H-SiC interface

細井 卓治*; 桐野 嵩史*; Chanthaphan, A.*; 上西 悠介*; 池口 大輔*; 吉越 章隆; 寺岡 有殿; 箕谷 周平*; 中野 佑紀*; 中村 孝*; et al.

Materials Science Forum, 717-720, p.721 - 724, 2012/05

 被引用回数:3 パーセンタイル:14.37

The energy band alignments of thermally grown SiO$$_{2}$$/SiC structures were investigated by means of synchrotron radiation photoelectron spectroscopy (SR-PES) and electrical characterization of SiC-MOS capacitors. In order to determine the energy band alignments of SiO$$_{2}$$/SiC, band gaps of the thermal oxides and valence band offsets at the interface were examined by SR-PES. SiC-MOS capacitors with Al electrodes were also fabricated to evaluate interface state density and conduction band offset. Experimental results indicate that hydrogen atoms are effective to terminate carbon-related defects. It can be concluded that interface quality degradation due to hydrogen desorption by vacuum annealing causes reduction of conduction band offset for thermally grown SiO$$_{2}$$/SiC structure.

論文

An in situ M$"{o}$ssbauer study using synchrotron radiation

増田 亮; 三井 隆也; 伊藤 恵司*; 榊 浩司*; 榎 浩利*; 中村 優美子*; 瀬戸 誠

Hyperfine Interactions, 204(1-3), p.139 - 142, 2012/03

 被引用回数:2 パーセンタイル:17.72

水素化過程について局所的観点から情報を得るため、その場メスバウアー測定用の装置を開発した。本装置を用いることで水素雰囲気下の試料の温度を調整でき、放射光メスバウアースペクトル及び核共鳴非弾性散乱のスペクトルをその場測定することができるというものである。本装置の有用性を確認すべく、$$c$$-GdFe$$_2$$H$$_3$$の真空中での温度変化を両スペクトルで観察し、それらのスペクトルの明らかな変化を確認した。その変化は脱水素化によるFe局所電子状態及びFe局所振動状態の変化として解釈されるものであり、本装置によってその場メスバウアー測定が可能であることが確認された。

論文

Present status of Japanese tasks for lithium target facility under IFMIF/EVEDA

中村 和幸; 古川 智弘; 平川 康; 金村 卓治; 近藤 浩夫; 井田 瑞穂; 新妻 重人; 大高 雅彦; 渡辺 一慶; 堀池 寛*; et al.

Fusion Engineering and Design, 86(9-11), p.2491 - 2494, 2011/10

 被引用回数:9 パーセンタイル:30.67(Nuclear Science & Technology)

IFMIF/EVEDAリチウムターゲット系は、5つの実証タスク(LF1-5)と1つの設計タスク(LF6)から構成されている。LF1の目的は、EVEDA液体リチウム試験ループを建設し運転することであり、日本が主たる責任を負っている。LF2は、EVEDA液体リチウム試験ループとIFMIF実機の設計に対する計測系の開発を行うものであり、現在、基礎研究が終了し、試験ループ用装置の設計を実施している。LF4は、リチウム中に含まれる窒素及び水素の除去技術を開発するものであり、LF2同様、現在、基礎研究が終了し、試験ループ用装置の設計を実施している。LF5は、ターゲットアッセンブリーの遠隔操作技術を開発するものであり、原子力機構は、フランジのリップ部分をレーザーによって切断,溶接を行うアイデアの実証を目指している。切断,溶接実験は2011年の実施予定である。LF6は、LF1-5の実証試験結果をもとにIFMIF実機の設計を行うものである。

論文

Current ramps in tokamaks; From present experiments to ITER scenarios

Imbeaux, F.*; Citrin, J.*; Hobirk, J.*; Hogeweij, G. M. D.*; K$"o$chl, F.*; Leonov, V. M.*; 宮本 斉児; 中村 幸治*; Parail, V.*; Pereverzev, G. V.*; et al.

Nuclear Fusion, 51(8), p.083026_1 - 083026_11, 2011/08

 被引用回数:30 パーセンタイル:14.1(Physics, Fluids & Plasmas)

In order to prepare adequate current ramp-up and ramp-down scenarios for ITER, present experiments from various tokamaks have been analysed by means of integrated modelling in view of determining relevant heat transport models for these operation phases. A set of empirical heat transport models for L-mode has been validated on a multi-machine experimental dataset for predicting the $$l_i$$ dynamics within $$pm$$0.15 accuracy during current ramp-up and ramp-down phases. The most accurate heat transport models are then applied to projections to ITER current ramp-up, focusing on the baseline inductive scenario (main heating plateau current of $$I_p = 15$$ MA). These projections include a sensitivity study to various assumptions of the simulation. While the heat transport model is at the heart of such simulations, more comprehensive simulations are required to test all operational aspects of the current ramp-up and ramp-down phases of ITER scenarios. Recent examples of such simulations, involving coupled core transport codes, free-boundary equilibrium solvers and a poloidal field (PF) systems controller are also described, focusing on ITER current ramp-down.

論文

Impact of stacked AlON/SiO$$_{2}$$ gate dielectrics for SiC power devices

渡部 平司*; 桐野 嵩史*; 上西 悠介*; Chanthaphan, A.*; 吉越 章隆; 寺岡 有殿; 箕谷 周平*; 中野 佑紀*; 中村 孝*; 細井 卓治*; et al.

ECS Transactions, 35(2), p.265 - 274, 2011/05

 被引用回数:7 パーセンタイル:4.54

The use of AlON gate insulator for SiC-based MOS power devices is proposed. Although direct deposition of AlON on 4H-SiC substrate causes electrical degradation, the fabricated MOS capacitor with AlON/SiO$$_{2}$$ stacked gate dielectric shows no flatband voltage shift and negligible capacitance-voltage (C-V) hysteresis. Owing to the high dielectric constant of AlON, significant gate leakage reduction was achieved even at high temperatures. Moreover, in order to improve electrical properties of thermally grown SiO$$_{2}$$/SiC interfaces, the impact of a combination treatment of nitrogen plasma exposure and forming gas annealing was investigated. Channel mobility enhancement of SiC-MOSFETs was consistent with the reduction in interface state density depending on the process conditions of the combination treatment, and obtained 50% mobility enhancement, while maintaining low gate leakage current.

論文

Energy band structure of SiO$$_{2}$$/4H-SiC interfaces and its modulation induced by intrinsic and extrinsic interface charge transfer

渡部 平司*; 桐野 嵩史*; 景井 悠介*; Harries, J.; 吉越 章隆; 寺岡 有殿; 箕谷 周平*; 中野 佑紀*; 中村 孝*; 細井 卓治*; et al.

Materials Science Forum, 679-680, p.386 - 389, 2011/03

 被引用回数:10 パーセンタイル:1.52

In this study, we investigated the energy band structure of SiO$$_{2}$$/4H-SiC fabricated on (0001) Si- and (000-1) C-face substrates by means of synchrotron radiation X-ray photoelectron spectroscopy, and discuss intrinsic and extrinsic effects of interface structure and electrical defects on the band offset modulation. It was found that valence band offset of the SiO$$_{2}$$/SiC for the C-face substrate was about 0.4 eV larger than that for the Si-face. Our photoelectron analysis revealed that the conduction band offset that determines gate leakage current and resultant gate oxide reliability of SiCMOS devices crucially depends on substrate orientation. Moreover, we found that the fixed charges accumulated at the SiO$$_{2}$$/SiC interface modulate the energy band structure to enlarge conduction band offset and that this extrinsic band structure modulation is again recovered by post treatments for defect termination.

論文

Current ramps in tokamaks; From present experiments to ITER scenarios

Imbeaux, F.*; Basiuk, V.*; Budny, R.*; Casper, T.*; Citrin, J.*; Fereira, J.*; 福山 淳*; Garcia, J.*; Gribov, Y. V.*; 林 伸彦; et al.

Proceedings of 23rd IAEA Fusion Energy Conference (FEC 2010) (CD-ROM), 8 Pages, 2011/03

In order to prepare adequate current ramp-up and ramp-down scenarios for ITER, present experiments from various tokamaks have been analysed by means of integrated modelling in view of determining relevant heat transport models for these operation phases. The most accurate heat transport models are then applied to projections to ITER current ramp-up, focusing on the baseline inductive scenario (main heating plateau current of Ip = 15 MA). These projections include a sensitivity studies to various assumptions of the simulation. Recent examples of such simulations, involving coupled core transport codes, free boundary equilibrium solvers and a poloidal field (PF) systems controller are described in the second part of the paper, focusing on ITER current ramp-down.

論文

Gate stack technologies for SiC power MOSFETs

渡部 平司*; 細井 卓治*; 桐野 嵩史*; 上西 悠介*; Chanthaphan, A.*; 池口 大輔*; 吉越 章隆; 寺岡 有殿; 箕谷 周平*; 中野 佑紀*; et al.

ECS Transactions, 41(3), p.77 - 90, 2011/00

 被引用回数:2 パーセンタイル:16.77

It is well known that SiC-based MOS devices have suffered from degraded electrical properties of thermally grown SiO$$_{2}$$/SiC interfaces, such as low inversion carrier mobility and deteriorated gate oxide reliability. This paper overviews the fundamental aspects of SiC-MOS devices and indicates intrinsic obstacles connected with an accumulation of both negative fixed charges and interface defects and with a small conduction band offset of the SiO$$_{2}$$/SiC interface which leading to the increased gate leakage current of MOS devices. To overcome these problems, we proposed using aluminum oxynitride insulators stacked on thin SiO$$_{2}$$ underlayers for SiC-MOS devices. Superior flatband voltage stability of AlON/SiO$$_{2}$$/SiC gate stacks was achieved by optimizing the thickness of the underlayer and nitrogen concentration in the high-k dielectrics. Moreover, we demonstrated reduced gate leakage current and improved current drivability of SiC-MOSFETs with AlON/SiO$$_{2}$$ gate stacks.

論文

TSC modelling of major disruption and VDE events in NSTX and ASDEX-upgrade and predictions for ITER

Bandyopadhyay, I.*; Gerhardt, S.*; Jardin, S.*; Sayer, R. O.*; 中村 幸治*; 宮本 斉児; Pautasso, G.*; 杉原 正芳*; ASDEX Upgrade Team*; NSTX Team*

Proceedings of 23rd IAEA Fusion Energy Conference (FEC 2010) (CD-ROM), 8 Pages, 2010/10

垂直移動現象(VDE)とプラズマの電流崩壊(メジャーディスラプション:MD)は、ITERの機器に大きな電磁力を及ぼす。ITERの堅牢な設計のためには、これらの現象で生じる電磁力を的確なモデルにより評価しなければならない。従来、ITERの電磁力評価は、ディスラプション解析コードDINAを用いて行われてきた。しかし、特定のコードで用いられているハローモデルのさまざまな前提条件によって、VDEやMDのシミュレーション結果が大きく影響されるため、トカマクシミュレーションコード(TSC)のような他のコードによって計算結果を検証するとともに、実験データによりコードを検証し、モデルを改良していくことが重要である。NSTXトカマクとASDEX-Uトカマクという特性の異なるトカマクにおけるVDEとMDをTSCによって解析したところ、装置によらず同じハローモデルで実験データを説明できることがわかった。また、両トカマクの実験データを用いて改良を行ったモデルによって、ITERにおけるモデル計算を行った。電流崩壊が速い場合には、TSCの計算結果と従来行われてきたDINAの計算結果は比較的一致したが、電流崩壊が遅い場合には大きな違いが見られ、その原因を探ることが今後の課題である。

論文

Current ramps in tokamaks; From present experiments to ITER scenarios

Imbeaux, F.*; Basiuk, V.*; Budny, R.*; Casper, T.*; Citrin, J.*; Fereira, J.*; 福山 淳*; Garcia, J.*; Gribov, Y. V.*; 林 伸彦; et al.

Proceedings of 23rd IAEA Fusion Energy Conference (FEC 2010) (CD-ROM), 8 Pages, 2010/10

ITERでの電流立ち上げ・立ち下げシナリオの準備に向けて、これら運転状態においてどの熱輸送モデルが適切であるかを決定するために、代表的なトカマクでの現在の実験結果を統合モデルシミュレーションにより解析した。本研究では、トカマク実験の解析結果をもとに、ITER標準誘導運転(プラズマ電流15MA)の電流立ち上げ・立ち下げシナリオでの予測を行った。統合モデルシミュレーション結果を、ASDEX Upgrade, C-Mod, DIII-D, JET, Tore Supraのオーミック加熱プラズマ及び外部加熱・電流駆動プラズマ実験データと比較することにより、さまざまな輸送モデルの検証を行った。最も実験結果の再現性の良かった幾つかのモデルを用いて、ITERの電流立ち上げ・立ち下げ段階での電子密度・電流密度プロファイルの予測を行った。電子温度プロファイルには輸送モデルによって大きな差が見られたが、最終的な電流密度プロファイルはモデル間でよく一致することがわかった。

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