Annual report of Nuclear Emergency Assistance and Training Center (April 1, 2012 - March 31, 2013)

Sato, Takeshi; Muto, Shigeo; Okuno, Hiroshi; Katagiri, Hiromi; Akiyama, Kiyomitsu; Okamoto, Akiko; Koie, Masahiro; Ikeda, Takeshi; Nemotochi, Toshimasa; Saito, Toru; et al.

JAEA-Review 2013-046, 65 Pages, 2014/02

JAEA-Review-2013-046.pdf:11.18MB

When a nuclear emergency occurs in Japan, the Japan Atomic Energy Agency (JAEA) has the responsibility of providing technical support to the National government, local governments, police, fire stations and nuclear operators etc., because the JAEA has been designated as the Designated Public Institution under the Basic Act on Disaster Control Measures and the Act on Response to Armed Attack Situations, etc.. The Nuclear Emergency Assistance and Training Center (NEAT) of JAEA provides a comprehensive range of technical support activities to an Off-Site Center in case of a nuclear emergency. Specifically, NEAT gives technical advice and information, dispatches specialists as required, and supplies the National Government and local governments with emergency equipments and materials. NEAT provides various exercise and training courses concerning nuclear disaster prevention to those personnel taking an active part in emergency response organizations at normal times. The tasks of NEAT, with its past experiences as a designated public institution including the responses to TEPCO's Fukushima Accident, have been shifted to technical supports to the national government for strengthening its abilities to emergency responses; the NEAT therefore focused on maintenance and operation of its functions, and strengthening its response abilities in cooperation with the national government. This annual report summarized these activities of JAEA/NEAT in the fiscal year 2012.

Synchrotron radiation photoemission study of GeN/Ge structures formed by plasma nitridation

Hosoi, Takuji*; Kutsuki, Katsuhiro*; Okamoto, Gaku*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Japanese Journal of Applied Physics, 50(10), p.10PE03_1 - 10PE03_5, 2011/10

https://doi.org/10.1143/JJAP.50.10PE03

Quantum spin nanotubes; Frustration, competing orders and criticalities

Sakai, Toru; Sato, Masahiro*; Okamoto, Kiyomi*; Okunishi, Koichi*; Itoi, Chigaku*

Journal of Physics; Condensed Matter, 22(40), p.403201_1 - 403201_13, 2010/10

https://doi.org/10.1088/0953-8984/22/40/403201

Recent developments of theoretical studies on spin nanotubes are reviewed, especially focusing on the S=1/2 three-leg spin tube. In contrast to the three-leg spin ladder, the tube has a spin gap in case of the regular-triangle unit cell when the rung interaction is sufficiently large. The effective theory based on the Hubbard Hamiltonian indicates a quantum phase transition to the gapless spin liquid due to the lattice distortion to an isosceles triangle. This is also supported by the numerical diagonalization and the density matrix renormalization group analyses. Furthermore, combining analytical and numerical approaches, we reveal several novel magnetic-field-induced phenomena: Nel, dimer, chiral and/or inhomogeneous orders, new mechanism for the magnetization plateau formation, and others. The recently synthesized spin tube materials are also briefly introduced.

Interface engineering of Ge MOS devices with ZrO gate dielectrics

Hosoi, Takuji*; Okamoto, Gaku*; Kutsuki, Katsuhiro*; Kagei, Yusuke*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.145 - 148, 2010/01

We developed high quality high-/Ge gate stacks with reduced leakage current and superior interface quality, which was fabricated by direct deposition of ZrO on Ge substrate and thermal oxidation. Synchrotron radiation photoelectron spectroscopy revealed that thermal oxidation at 823 K caused not only an intermixing between ZrO and Ge but also the formation of GeO at the interlayer. We obtained an equivalent oxide thickness (EOT) of 1.9 nm, and an interface state density of 10 cmeV for Au/ZrO/Ge capacitors. Furthermore, we found that the A10 capping on the Zr0 1ayer is effective for decreasing EOT. The interface state density as low as 5.310 cmeV was obtained for the AlO/ZrO/Ge stack with 30 min oxidation. The EOT could be reduced to l.6 nm by 10 min oxidation. The leakage current was two orders of magnitude lower than the conventional poly-Si/SiO/Si stack.

In-situ characterization of chemical bonding states and thermal decomposition of GeN film by SR-XPS

Hosoi, Takuji*; Kutsuki, Katsuhiro*; Okamoto, Gaku*; Harada, Makoto*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

After wet cleaning of p-Ge(001) by HF solution, the surface was anealed in an ultra-high vacuum and was nitrided using a large area nitrogen plasma apparatus in the conditions of surface temperature: 623 K, RF power: 50 W, nitrogen pressure:10.5 Torr, and reaction period: 30 min. The chemical bonding states and thermal decomposition processes of the nitide film was in-situ analyzed by synchrotron radiation photoemission spectroscopy. XPS spectra of clean Ge surface showed binding energies of Ge3d5/2 and 3/2 levels were 29.2 eV and 29.8 eV, respectively. The Ge surface nitrided by the high density plasma was oxidized by exposure to the air so that both components of nitride and oxide were observed by the SR-XPS before thermal anealing. GeO component was selectively removed by thermal anealing up to 773 K in the UHV condition. After that XPS spectra of pure GeN film could be observed. We concluded chemical shift of the nitrided Ge was 2.2 eV.

Quantum phase transition of the asymmetric three-leg spin tube

Sakai, Toru; Sato, Masahiro*; Okunishi, Koichi*; Otsuka, Yuichi*; Okamoto, Kiyomi*; Itoi, Chigaku*

no journal, , 

We investigate quantum phase transitions of the S=1/2 three-leg antiferromagnetic spin tube with asymmetric inter-chain (rung) exchange interactions. On the basis of the electron tube system, we propose a useful effective theory to give the global phase diagram of the asymmetric spin tube. In addition, using other effective theories we raise the reliability of the phase diagram. The density-matrix renormalization-group and the numerical diagonalization analyses show that the finite spin gap appears in a narrow region around the rung-symmetric line.

SR-XPS analysis of SiO/SiC interfaces formed by thermal oxidation of 4H-SiC(000) surfaces

Kirino, Takashi*; Kagei, Yusuke*; Okamoto, Gaku*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; et al.

no journal, , 

In order to study the origin of degradation for interface chracteristics and reliability of SiC(0001)C surfaces, chemical bonding states at SiO/SiC interfaces made on (000) and (000) surfaces have been analyzed by using a synchrotron radiation XPS method. Si2p components were extracted from Si2p photoemission peaks. Sub-oxidea components were observed in addition to the SiC substrate and the oxide layer. In the interface of the oxide layer formed on the (000) surface, Si component was small, higher oxidation number components were larger, and total amount od sub-oxides was larger comparing to that of the (000) surface. A binding energy for oxide formed on the (000) surface was shifted to 0.22 eV higher side comparing to that of the (000) surface. It indicates that band off-set of conduction band is small in the SiO/SiC interface.

SR-XPS study on energy band structure of thermally grown SiO/4H-SiC interface

Kirino, Takashi*; Kagei, Yusuke*; Okamoto, Gaku*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; et al.

no journal, , 

Device ability of SiC-MOSFET's expected from physical data has not been achieved because channel resistance increases by mobility degradation due to Si0/SiC interface defects. Although high channel mobility is obtained in the MOSFET's made on a 4H-SiC(000-1)c face compared to them on a 4H-SiC(0001)Si face, reliability of an oxide film is preferential in the MOSFET's on a 4H-SiC(000-1)c face. Conduction band off-set of SiO/SiC interface and energy distribution of the interface level density are known to be different between MOSFET's on a 4H-SiC(000-1)c face and a 4H-SiC(0001)Si face. Physical origins for them are not known yet. In order to make clear the reasons for degradation of interface characteristics and reliability in the MOSFET's made on an SiC(000-1)c face, we evaluated chemical bonding states and energy band structures of SiO/SiC interfaces formed on an SiC(0001)Si face and an SiC(000-1)c face using synchrotron radiation photoemission spectroscopy.

Coexistence of the staggered magnetization, dimerization, and chiral order in the magnetization plateau of the spin tube

Sakai, Toru; Sato, Masahiro*; Okunishi, Koichi*; Okamoto, Kiyomi*; Itoi, Chigaku*

no journal, , 

no abstracts in English

Determination of SiO/4H-SiC conduction band offset by SR-XPS

Kirino, Takashi*; Kagei, Yusuke*; Okamoto, Gaku*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; et al.

no journal, , 

It has been reported that hydrogen incorporation into thermally grown SiO/4H-SiC structures not only improves the interface quality, but also degrades the gate oxide reliability depending on SiC surface orientation. In this study, energy band diagrams of thermally grown SiO/4H-SiC(0001) and SiO/4H-SiC(000-1) structures with and without high-temperature hydrogen annealing were evaluated by synchrotron radiation X-ray photoelectron spectroscopy. The SiO band gap and valence band offset at SiO/SiC interface were extracted from O 1s energy loss spectra and valence band spectra, respectively. The obtained energy band diagrams revealed that conduction band offsets at SiO/SiC interfaces were decreased after the hydrogen annealing especially for 4H-SiC(000-1) substrates. This is one possible reason for the reliability degradation of 4H-SiC metal-oxide-semiconductor devices by hydrogen incorporation.