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Imaizumi, Tomomi; Miyauchi, Masaru; Ito, Masayasu; Watahiki, Shunsuke; Nagata, Hiroshi; Hanakawa, Hiroki; Naka, Michihiro; Kawamata, Kazuo; Yamaura, Takayuki; Ide, Hiroshi; et al.
JAEA-Technology 2011-031, 123 Pages, 2012/01
The number of research reactors in the world is decreasing because of their aging. However, the planning to introduce the nuclear power plants is increasing in Asian countries. In these Asian countries, the key issue is the human resource development for operation and management of nuclear power plants after constructed them, and also the necessity of research reactor, which is used for lifetime extension of LWRs, progress of the science and technology, expansion of industry use, human resources training and so on, is increasing. From above backgrounds, the Neutron Irradiation and Testing Reactor Center began to discuss basic concept of a multipurpose low-power research reactor for education and training, etc. This design study is expected to contribute not only to design tool improvement and human resources development in the Neutron Irradiation and Testing Reactor Center but also to maintain and upgrade the technology on research reactors in nuclear power-related companies. This report treats the activities of the working group from July 2010 to June 2011 on the multipurpose low-power research reactor in the Neutron Irradiation and Testing Reactor Center and nuclear power-related companies.
Elfiky, D.*; Yamaguchi, Masafumi*; Sasaki, Takuo*; Takamoto, Tatsuya*; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; Elnawawy, M.*; Eldesoky, T.*; et al.
Japanese Journal of Applied Physics, 49(12), p.121201_1 - 121201_7, 2010/12
Times Cited Count:12 Percentile:45.72(Physics, Applied)One of the fundamental objectives for research and development of space solar cells is to improve their radiation resistance. InGaP solar cells with low base carrier concentrations under low-energy proton irradiations have shown high radiation resistances. In this study, an analytical model for low-energy proton radiation damage to InGaP subcells based on a fundamental approach for radiative and nonradiative recombinations has been proposed. The radiation resistance of InGaP subcells as a function of base carrier concentration has been analyzed by using the radiative recombination lifetime and damage coefficient K for the minority-carrier lifetime of InGaP. Numerical analysis shows that an InGaP solar cell with a lower base carrier concentration is more radiation-resistant. Satisfactory agreements between analytical and experimental results have been obtained, and these results show the validity of the analytical procedure. The damage coefficients for minority-carrier diffusion length and carrier removal rate with low-energy proton irradiations have been observed to be dependent on carrier concentration through this study. As physical mechanisms behind the difference observed between the radiation-resistant properties of various base doping concentrations, two mechanisms, namely, the effect of a depletion layer as a carrier collection layer and generation of the impurity-related complex defects due to low-energy protons stopping within the active region, have been proposed.
Elfiky, D.*; Yamaguchi, Masafumi*; Sasaki, Takuo*; Takamoto, Tatsuya*; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; Elnawawy, M.*; Eldesoky, T.*; et al.
Japanese Journal of Applied Physics, 49(12), p.121202_1 - 121202_5, 2010/12
Times Cited Count:7 Percentile:30.96(Physics, Applied)GaAs solar cells with the lower base carrier concentration under low energy proton irradiations had shown experimentally the better radiation-resistance. Analytical model based on fundamental approach for radiative and non-radiative recombination has been proposed for radiation damage in GaAs sub-cells. The radiation resistance of GaAs sub-cells as a function of base carrier concentration has been analyzed by using radiative recombination lifetime and damage coefficient for minority carrier lifetime. Numerical analysis shows good agreement with experimental results. The effect of carrier concentration upon the change of damage constant and carrier removal rate have been studied.
Elfiky, D.*; Yamaguchi, Masafumi*; Sasaki, Takuo*; Takamoto, Tatsuya*; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; Elnawawy, M.*; Eldesuky, T.*; et al.
Proceedings of 35th IEEE Photovoltaic Specialists Conference (PVSC-35) (CD-ROM), p.002528 - 002532, 2010/06
Times Cited Count:6 Percentile:87.63(Energy & Fuels)Proton energy dependence of radiation damage to GaAs/Ge solar cells irradiated with protons with various energies (50 keV, 200 keV, 1 MeV and 9.5 MeV) were analyzed by using PC1D simulation together with SRIM simulations to investigate their electrical properties. The degradation of the open-circuit voltage is highest for 50 keV irradiation and lowest for 9.5 MeV irradiation. According to SRIM simulations the above changes in electrical properties are mainly related to damage in different regions of the solar sells.
Izawa, Yasukazu*; Nishihara, Katsunobu*; Tanuma, Hajime*; Sasaki, Akira; Murakami, Masakatsu*; Sunahara, Atsushi*; Nishimura, Hiroaki*; Fujioka, Shinsuke*; Aota, Tatsuya*; Shimada, Yoshinori*; et al.
Journal of Physics; Conference Series, 112, p.042047_1 - 042047_4, 2008/00
Times Cited Count:8 Percentile:93.45(Physics, Fluids & Plasmas)In the development of a high power EUV source used in the EUV lithography system, we have been constructed EUV database of laser-produced tin plasma by the theoretical and experimental studies. On the basis of our understanding, the optimum conditions of lasers and plasmas were clarified, and we proposed the guidelines of laser plasma to obtain clean, efficient and high power EUV source for the practical EUV lithography system. In parallel to such studies, novel targets and high power laser system to generate the optimized EUV source plasma have been developed.
Sunahara, Atsushi*; Sasaki, Akira; Tanuma, Hajime*; Nishihara, Katsunobu*; Nishikawa, Takeshi*; Koike, Fumihiro*; Fujioka, Shinsuke*; Aota, Tatsuya*; Yamaura, Michiteru*; Shimada, Yoshinori*; et al.
Purazuma, Kaku Yugo Gakkai-Shi, 83(11), p.920 - 926, 2007/11
We study the EUV emission from laser produced Sn plasmas using the 1D and 2D radiation hydrodynamics simulation, for the development of EUV source for the next generation semiconductor lithography. The opacity and emissivity of the plasma used in the simulation are calculated by a detailed atomic model, with the accurate wavelength of emission lines obtained from the detailed spectroscopic measurements. Calculation is shown to reproduce the experimental spectrum and conversion efficiency reasonably, including the effect of photo pumping which modifies the EUV emission spectrum in the case with a long scale length of the plasmas.
Sasaki, Takuo*; Ekins-Daukes, N. J.*; Lee, H. S.*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Yamaguchi, Masafumi*
JAEA-Review 2006-042, JAEA Takasaki Annual Report 2005, P. 7, 2007/02
no abstracts in English
Sasaki, Takuo*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Yamaguchi, Masafumi*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.165 - 168, 2006/10
no abstracts in English
Lee, H. S.*; Ekins-Daukes, N. J.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.556 - 558, 2005/00
no abstracts in English
Ekins-Daukes, N. J.*; Arafune, Koji*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; et al.
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.683 - 686, 2005/00
no abstracts in English
Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.87 - 91, 2004/10
no abstracts in English
Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Applied Physics Letters, 85(13), p.2511 - 2513, 2004/09
Times Cited Count:11 Percentile:42.73(Physics, Applied)no abstracts in English
Miwa, Atsushi*; Sasaki, Tatsuya*; Hara, Hiroshi*
JNC TJ7420 2005-030, 131 Pages, 2003/03
The purpose of this study is conducted for the purpose of considering as the basic data for evaluating the influence range by dislocation movement. The contents of studies are consideration by the investigation technique of collection arrangement of drilling data, collection arrangement of active fault underground structure, informational GIS-izing, creation of a 3-dimensional geological structure model, and the influence range of an active fault belt. Informational collection carried out for the national active fault in Japan, and the dislocation which refers to the result and is set as the object of informational GIS-izing and a 3-dimensional geological structure model was made into Senya active fault dislocations in the rim of the east of the Yokote basin faults in northeast Japan.In the 3-dimensional geological structure model, the data of the interpretation of sectional view of the seismic reflecting method, a geologic map, active fault information, and the inversion tectonics of northeast Japan were made reference, and it created on the scale of 1/50,000. As a result of verifying the accuracy of the model as compared with a gravity inquiry result, the error of base rock form is less than 1km. However, base rock form is the accuracy of the synthetic model after the back-arc basin formative period after 15Ma In order for the influence range of an active fault belt to verify from now on, data, such as airborne geophysics and gravity of the accuracy which the modification after the east-and-west strong compression term (2.4Ma or subsequent ones) after inversion tectonics.
Takebe, Shinichi; Kimura, Hideo; Matsuzuru, Hideo; Takahashi, Tomoyuki*; Yasuda, Hiroshi*; Uchida, Shigeo*; Mahara, Yasunori*; Saeki, Akiyoshi*; Sasaki, Noriyuki*; Ashikawa, Nobuo*; et al.
JAERI-Review 2001-015, 81 Pages, 2001/05
no abstracts in English
Miwa, Atsushi*; Sasaki, Tatsuya*; Shimoyama, Masahiro*; Takahashi, Nao*
JNC TJ7420 2005-029, 110 Pages, 2000/03
It is important study that to presume probability of changing fault activity in the future. At first, we need to investigate the fault activity in the past time in order to presume when the active faults will move. We investigate the fault activity in the past time. And we try to distribute Japanese Islands into the fault tectonics regions. We collect the reports, arrange these and analyze these in order to understand the distinctions of fault tectonics. We notice the reports of fourteen-point, namely. (1) stress distribution, (2) faults distribution of time and space, (3) active fault distribution, (4) active structures, (5) geological structure, (6) earthquake distribution, (7) strain distribution, (8) GPS (Global Positioning System)-crustal movement, (9) sedimentary basin distribution, (10) gravity anomaly, (11) terrace surface distribution, (12) volcanic distribution, (13) resistivity distribution and (14) seismic tomography. We change these collected reports into GIS (Geographic Information System). And we investigate into the fault tectonics regions with GIS. We distribute Japanese Islands into 13 large regions about the fault tectonics regions, and into 44 small regions about the fault tectonics regions.
Miwa, Atsushi*; Sasaki, Tatsuya*; Takahashi, Nao*
JNC TJ7420 2005-027, 334 Pages, 2000/03
It is important study to seize fault activity in order to clarify how effects the active faults influence geo-environment. In this paper, we investigated the distributive character and the activity of active faults with precise aerial photograph interpretation of tectonic landforms. And we prepared fault parameters for this new data by compiling previous results. A number of active faults exist particularly in central Japan. There is a marked regularity in the fault systems between the trend of faults and the sense of the displacement: the reverse fault system distributes in the Northeast Japan with NS-trending, the lateral faults distribute in the Southwest Japan. In particular, NW-trending faults are left-lateral, whereas NE-trending faults are right-lateral. Normal faults are in the central Kyusyu. This implies that the earth's crust of the region is under the same stress system having the maximum principal axis of approximate east-west. Activity of most of the active faults in Japan is class B(10-4 meters per one year). It is limited the distribution of active faults of class A. We presumed when active faults started to move from fault parameters. Active faults in Japan have started at least through a few hundreds thousand years ago.
Takahashi, Tomoyuki*; Takebe, Shinichi; Kimura, Hideo; Matsuzuru, Hideo; Yasuda, Hiroshi*; Uchida, Shigeo*; Saeki, Akiyoshi*; Mahara, Yasunori*; Sasaki, Noriyuki*; Ashikawa, Nobuo*; et al.
KURRI-KR-44, p.169 - 176, 2000/02
no abstracts in English
Takahashi, Tomoyuki; Takebe, Shinichi; Kimura, Hideo; Matsuzuru, Hideo; Yasuda, Hiroshi*; Uchida, Shigeo*; Saeki, Akiyoshi*; Mahara, Yasunori*; Sasaki, Noriyuki*; *; et al.
JAERI-Research 97-089, 25 Pages, 1997/12
no abstracts in English
Takahashi, Tomoyuki; Takebe, Shinichi; Kimura, Hideo; Matsuzuru, Hideo; Yasuda, Hiroshi*; Uchida, Shigeo*; Saeki, Akiyoshi*; Mahara, Yasunori*; Sasaki, Noriyuki*; Yajima, Tatsuya*; et al.
JAERI-Research 97-066, 34 Pages, 1997/10
no abstracts in English
; Yajima, Tatsuya*; Yui, Mikazu; Yoshikawa, Hideki; Sasaki, Noriaki
Nihon Kagakkai-Shi, 1993(5), p.445 - 449, 1993/00
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