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Magnetization switching process by dual spin-orbit torque in interlayer exchange-coupled systems

増田 啓人*; 山根 結太*; 関 剛斎*; Raab, K.*; 土肥 昂尭*; Modak, R.*; 内田 健一*; 家田 淳一; Kl$"a$ui, M.*; 高梨 弘毅

Applied Physics Letters, 122(16), p.162402_1 - 162402_7, 2023/04

 被引用回数:0 パーセンタイル:59.51(Physics, Applied)

We report current-induced magnetization switching in Pt/Co/Ir/Co/Pt multilayers with different Ir layer thicknesses ($$t_mathrm{Ir}$$), where the perpendicularly magnetized Co layers are coupled ferromagnetically or antiferromagnetically through an interlayer exchange coupling and are sandwiched by the Pt spin Hall layers. The domain structures formed during switching vary depending on the magnetization alignment, i.e., ferromagnetically coupled or antiferromagnetically coupled configuration. These results clarify the macroscopic picture of switching process for interlayer exchange-coupled systems. The local picture of the switching process is also examined by a numerical calculation based on a macrospin model, which reveals the switching dynamics triggered by dual spin-orbit torque for both antiferromagnetically and ferromagnetically coupled cases. The numerical calculation shows that the dual spin-orbit torque from the two Pt layers effectively acts on the two Co layers not only for the antiferromagnetically coupled case but also for the ferromagnetically coupled one. Our findings deepen the under- standing of the switching mechanism in a magnetic multilayer and provide an avenue to design spintronic devices with more efficient spin-orbit torque switching.


Current-induced crystallisation in a Heusler-alloy-based giant magnetoresistive junction for neuromorphic potentiation

Zhou, Z.*; Frost, W.*; Lloyd, D. C.*; 関 剛斎*; 窪田 崇秀*; Ramos, R.*; 齊藤 英治; 高梨 弘毅; 廣畑 貴文*

Journal of Magnetism and Magnetic Materials, 571, p.170575_1 - 170575_5, 2023/04

Recent development in neuromorphic computation allows us to achieve low power and highly efficient calculations better than the conventional von Neumann computation. In order to achieve realistic synaptic operation, potentiation to add weighting to strengthen a selected artificial synapse. Such functionality can be achieved by reducing the electrical resistance of the artificial synapse. Recently, a ferromagnetic Heusler alloy used in a magnetoresistive junction has been demonstrated to crystallise via the layer-by-layer mode by introducing an electrical current pulse. In this study, we have extended the current-induced crystallisation to a junction with epitaxially-grown Heusler alloy after post-annealing for crystallisation. By combining this potentiation functionality with the neuromorphic operation, realistic synaptic computation can be developed.


Effect of water activity on the mechanical glass transition and dynamical transition of bacteria

曽我部 知史*; 中川 洋; 山田 武*; 小関 成樹*; 川井 清司*

Biophysical Journal, 121(20), p.3874 - 3882, 2022/10

 被引用回数:1 パーセンタイル:21.24(Biophysics)

本研究の目的は、バクテリア($$Cronobacter sakazakii$$)のガラス転移挙動を水分活性($$a_{rm w}$$)の関数として明らかにすることである。298Kでの機械的緩和を調べ、機械的$$a_{rm wc}$$(298Kで機械的ガラス転移が起こる$$a_{rm w}$$)を0.667と決定した。平均二乗変位の温度依存性は、中性子非弾性散乱により調べた。フィッティングにより、2つの動的転移温度(low $$T_{rm ds}$$とhigh $$T_{rm ds}$$)が決定された。乾燥試料を除いて、低Tdに対する$$a_{rm w}$$の影響はわずかであった。高$$T_{rm d}$$$$a_{rm w}$$の減少に伴い大きく上昇した。高$$T_{rm d}$$で決定された動的$$a_{rm wc}$$(0.688)は、測定時間スケールが異なるため、機械的$$a_{rm wc}$$よりもわずかに高い値であった。高$$T_{rm d}$$をガラス転移温度($$T_{rm g}$$)に変換し、無水$$T_{rm g}$$は411Kと推定された。


Large antisymmetric interlayer exchange coupling enabling perpendicular magnetization switching by an in-plane magnetic field

増田 啓人*; 関 剛斎*; 山根 結太*; Modak, R.*; 内田 健一*; 家田 淳一; Lau, Y.-C.*; 深見 俊輔*; 高梨 弘毅

Physical Review Applied (Internet), 17(5), p.054036_1 - 054036_9, 2022/05

 被引用回数:3 パーセンタイル:69.66(Physics, Applied)



Evaluation of edge domains in giant magnetoresistive junctions

Frost, W.*; 関 剛斎*; 窪田 崇秀*; Ramos, R.*; 齊藤 英治; 高梨 弘毅*; 廣畑 貴文*

Applied Physics Letters, 118(17), p.172405_1 - 172405_5, 2021/04

 被引用回数:1 パーセンタイル:8.23(Physics, Applied)

We demonstrate that the spin-Seebeck effect can be used to estimate the volume of edge domains formed in a giant magnetoresistive (GMR) device. The thermal gradient induced by Joule heating can be harnessed by the addition of a ferromagnetically insulating channel of Fe$$_2$$O$$_3$$ on the sides of the GMR pillar. This generates a spin wave in Fe$$_2$$O$$_3$$, which couples with the free-layer edge magnetization and controls the reversal of the ferromagnetic layers in one direction only, increasing the current density from $$(1.1pm0.1)times10^7$$ A/cm$$^2$$ to $$(7.0pm0.5)times10^7$$ A/cm$$^2$$. By simple assumption, we estimate the effect of the edge domain on magnetization reversal to be $$10%-15%$$ by spin-transfer torque.


Spinmotive force in the out-of-plane direction generated by spin wave excitations in an exchange-coupled bilayer element

Zhou, W.*; 関 剛斎*; 今村 裕志*; 家田 淳一; 高梨 弘毅*

Physical Review B, 100(9), p.094424_1 - 094424_5, 2019/09


 被引用回数:6 パーセンタイル:33.42(Materials Science, Multidisciplinary)

The generation of the spinmotive force (SMF) requires the temporal and spatial variations of the magnetic moments. We explore an approach to satisfy this requirement by creating asymmetry in a thin film structure along the out-of-plane direction, through the use of an exchange-coupled $$L$$1$$_{0}$$-FePt / Ni$$_{81}$$Fe$$_{19}$$ bilayer element. As the spin wave is excited by rf magnetic field, a continuous dc voltage signal along the out-of-plane direction of the bilayer element appears. The sign of the voltage signal and its microwave power dependency agree with the theoretical framework of the SMF. The corresponding spin wave modes are revealed by carrying out the micromagnetic simulation. Our results demonstrate the generation of the SMF using a vertically structured element in addition to previously reported in-plane structured devices.



長谷川 和男; 金正 倫計; 小栗 英知; 山本 風海; 林 直樹; 山崎 良雄; 内藤 富士雄*; 吉井 正人*; 外山 毅*; 山本 昇*; et al.

Proceedings of 16th Annual Meeting of Particle Accelerator Society of Japan (インターネット), p.1235 - 1239, 2019/07

J-PARCでは2018年の夏季メンテナンス終了後、3GeVシンクロトロン(RCS)からビームを供給する物質・生命科学実験施設(MLF)での利用運転を10月下旬から再開した。出力は夏前の500kWと同じであるが、リニアックのピークビーム電流値を、夏前の40mAから定格の50mAに上げた。一方、スーパーカミオカンデの改修やハドロン実験施設の保守や整備などもあり、30GeVのメインリング(MR)のビーム運転は休止したが、利用運転は2月中旬からハドロン実験施設向けに51kWで再開した。しかし3月18日、MRへの入射ビームラインでの偏向電磁石1台に不具合が発生し、仮復旧で4月5日に利用運転を再開したが、再度不具合が発生し4月24日に夏前の利用運転を終了した。2018年度の稼働率は、リニアック, RCSともに安定でMLF向けは94%、ニュートリノとハドロン実験施設向けは86%、74%であった。ここでは、こうした1年間の運転経験を報告する。



齊藤 宏; 野澤 隆; 武宮 博; 関 暁之; 松原 武史; 斎藤 公明; 北村 哲浩

JAEA-Review 2017-040, 34 Pages, 2018/03





小松 和三*; 関 健史*; 長縄 明大*; 岡 潔*; 西村 昭彦

保全学, 16(3), p.89 - 95, 2017/10



Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

大島 武; 横関 貴史; 村田 航一; 松田 拓磨; 三友 啓; 阿部 浩之; 牧野 高紘; 小野田 忍; 土方 泰斗*; 田中 雄季*; et al.

Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01

 被引用回数:12 パーセンタイル:55.22(Physics, Applied)

In this study, we report the effects of $$gamma$$-ray irradiation and subsequent annealing on the electrical characteristics of vertical structure power 4H Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the blocking voltage of 1200 V. The MOSFETs were irradiated with $$gamma$$-rays up to 1.2 MGy in a N$$_{2}$$ atmosphere at room temperature (RT). During the irradiation, no bias was applied to each electrode of the MOSFETs. After the irradiation, the MOSFETs were kept at RT for 240 h to investigate the stability of their degraded characteristics. Then, the irradiated MOSFETs were annealed up to 360 $$^{circ}$$C in the atmosphere. The current-voltage (I-V) characteristics of the MOSFETs were measured at RT. By 1.2 MGy irradiation, the shift of threshold voltage (V$$_{T}$$) for the MOSFETs was -3.39 V. After RT preservation for 240 h, MOSFETs showed no significant recovery in V$$_{T}$$. By annealing up to 360 $$^{circ}$$C, the MOSFETs showed remarkable recovery, and the values of V$$_{T}$$ become 91 % of the initial values. Those results indicate that the degraded characteristics of SiC MOSFETs can be recovered by thermal annealing at 360 $$^{circ}$$C.


A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

土方 泰斗*; 三友 啓*; 松田 拓磨*; 村田 航一*; 横関 貴史*; 牧野 高紘; 武山 昭憲; 小野田 忍; 大久保 秀一*; 田中 雄季*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11

In order to develop semiconductor devices with MGy radiation resistivity, we are developing power metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on silicon carbide (SiC) semiconductors. The $$gamma$$-ray irradiation responses of power SiC-MOSFETs were studied under various irradiation temperatures and humidity with various gate-bias conditions. Making comparisons between these responses, the optimum device operating condition and a better device structure were derived and MGy resistivity was achieved. Besides, $$gamma$$-ray irradiation tests for a motor-driver circuits consisting of SiC-MOSFETs were carried out, and as a result, their continuous operation up to 2 MGy was confirmed.


Effect of humidity and temperature on the radiation response of SiC MOSFETs

武山 昭憲; 松田 拓磨; 横関 貴史; 三友 啓; 村田 航一; 牧野 高紘; 小野田 忍; 田中 雄季*; 神取 幹郎*; 吉江 徹*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11

Influence of $$gamma$$-ray irradiation under high temperature and high humidity circumstance on the electrical characteristics of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. The drain current (I$$_{D}$$)-gate voltage (V$$_{G}$$) curves shifted to the negative voltage side and no significant further shift was observed with increasing the dose above 10 kGy. Suppression of the negative shift of threshold voltage (V$$_{th}$$) means that positive charges generated by irradiation were thermally annealed by elevated temperature during irradiation. The leakage current slightly increased at 5 and 10 kGy, however, those values recovered to be approximately the initial value above 40 kGy. Humidity circumstance attributed to remarkable suppression of the leakage current in comparison with dry circumstance.


Progress of ITER full tungsten divertor technology qualification in Japan

江里 幸一郎; 鈴木 哲; 関 洋治; 毛利 憲介; 横山 堅二; Escourbiac, F.*; 平井 武志*; Kuznetsov, V.*

Fusion Engineering and Design, 98-99, p.1281 - 1284, 2015/10

 被引用回数:36 パーセンタイル:96.06(Nuclear Science & Technology)



Enhancement of anomalous Nernst effects in metallic multilayers free from proximity-induced magnetism

内田 健一*; 吉川 貴史*; 関 剛斎*; 小宅 教文*; 塩見 淳一郎*; Qiu, Z.*; 高梨 弘毅*; 齊藤 英治

Physical Review B, 92(9), p.094414_1 - 094414_6, 2015/09

 被引用回数:77 パーセンタイル:93.14(Materials Science, Multidisciplinary)

The anomalous Nernst effect (ANE) has been investigated in alternately stacked multilayer films comprising paramagnetic and ferromagnetic metals. We found that the ANE is enhanced by increasing the number of the paramagnet/ferromagnet interfaces and keeping the total thickness of the films constant, and that the enhancement appears even in the absence of magnetic proximity effects; similar behavior was observed not only in Pt/Fe multilayers but also in Au/Fe and Cu/Fe multilayers free from proximity ferromagnetism. This universal enhancement of the ANE in metallic multilayers suggests the presence of unconventional interface-induced thermoelectric conversion in the Fe films attached to the paramagnets.


Observation of inverse spin Hall effect in ferromagnetic FePt alloys using spin Seebeck effect

関 剛斎*; 内田 健一*; 吉川 貴史*; Qiu, Z.*; 齊藤 英治; 高梨 弘毅*

Applied Physics Letters, 107(9), p.092401_1 - 092401_4, 2015/08

 被引用回数:37 パーセンタイル:81.16(Physics, Applied)

We experimentally observed the inverse spin Hall effect (ISHE) of ferromagnetic FePt alloys. Spin Seebeck effect due to the temperature gradient generated the spin current ($$J_s$$) in the FePt$$vert$$Y$$_3$$Fe$$_5$$O$$_{12}$$ (YIG) structure, and $$J_s$$ was injected from YIG to FePt and converted to the charge current through ISHE of FePt. The significant difference in magnetization switching fields for FePt and YIG led to the clear separation of the voltage of ISHE from that of anomalous Nernst effect in FePt. We also investigated the effect of ordering of FePt crystal structure on the magnitude of ISHE voltage in FePt.


Recovery of the electrical characteristics of SiC-MOSFETs irradiated with gamma-rays by thermal treatments

横関 貴史; 阿部 浩之; 牧野 高紘; 小野田 忍; 田中 雄季*; 神取 幹郎*; 吉江 徹*; 土方 泰斗*; 大島 武

Materials Science Forum, 821-823, p.705 - 708, 2015/07

Since silicon carbide (SiC) has high radiation resistance, it is expected to be applied to electronic devices used in harsh radiation environments, such as nuclear facilities. Especially, extremely high radiation resistant devices (MGy order) are required for decommissioning of TEPCO Fukushima Daiichi nuclear reactors. The development of radiation resistant devices based on Metal-Oxide-Semiconductor (MOS) FETs is important since MOSFETs can easily realize normally-off and low-loss power devices. In this study, we irradiated vertical power 4H-SiC MOSFETs with gamma-rays up to 1.2 MGy, and investigated the recovery of their degraded characteristics due to thermal annealing up to 360 $$^{circ}$$C. The drain current (I$$_{D}$$) - gate voltage (V$$_{G}$$) curves of SiC MOSFETs shift to the negative voltage side and the leakage of I$$_{D}$$ increased by irradiation at 1.2 MGy. After the irradiation, the MOSFETs were kept at RT for 240 h. By the RT-annealing, no significant change in the degraded electrical characteristics of SiC MOSFETs was observed. The degraded characteristics of SiC MOSFETs began to recover by annealing above 120 $$^{circ}$$C, and their characteristics reach almost the initial ones by annealing at 360 $$^{circ}$$C.


Compact neutron sources for energy and security

上坂 充*; 小林 仁*; 呉田 昌俊; 糠塚 重裕*; 西村 和哉*; 井頭 政之*; 堀 順一*; 鬼柳 善明*; 田儀 和浩*; 關 善親*; et al.

Reviews of Accelerator Science and Technology, 8, p.181 - 207, 2015/00



Development of tungsten monoblock technology for ITER full-tungsten divertor in Japan

関 洋治; 江里 幸一郎; 鈴木 哲; 横山 堅二; 毛利 憲介; 平井 武志*; Escourbiac, F.*; Kuznetsov, V.*

Proceedings of 25th IAEA Fusion Energy Conference (FEC 2014) (CD-ROM), 8 Pages, 2014/10

Through R&D for a plasma facing unit (PFU) of a full-tungsten (W) ITER divertor, Japan Atomic Energy Agency (JAEA) succeeded in demonstrating the durability of the W divertor which endured a repetitive heat load of $$20$$ MW/m$$^{2}$$ without macroscopic cracks. At the beginning of this activity, the bonding technology of armor to heat sink was one of the most important key issues in a manufacturing process. JAEA improved the bonding process of the W divertor mock-ups. At first the bonding between the W armor and the copper interlayer (Cu) is performed by using several technologies, such as "Direct casting " or "Diffusion bonding" or "HIP bonding". Then the brazing between the Cu and the cooling pipe is done. Then the rejection rate due to those bonding processes has been significantly been reduced. As a performance test for the bonding and a heat removal capability, the high heat flux (HHF) testing was carried out for 6 small-scale mock-ups for the R&D of the full-W ITER divertor. Moreover, a W part of 4 full-scale prototype PFUs were also tested. In the tests, all of the W monoblocks endured the repetitive heat load of $$10$$ MW/m$$^{2}$$ $$times$$ $$5,000$$ cycles and $$20$$ MW/m$$^{2}$$ $$times$$ $$1,000$$ cycles without the macroscopic crack, which strongly encourages the realization of the full-W divertor target from the start of the operation in ITER. This paper presents the latest R&D activities on the full-W ITER divertor in JAEA.


Current-induced spin polarization on metal surfaces probed by spin-polarized positron beam

Zhang, H.; 山本 春也; 深谷 有喜; 前川 雅樹; Li, H.; 河裾 厚男; 関 剛斎*; 齊藤 英治*; 高梨 弘毅*

Scientific Reports (Internet), 4, p.4844_1 - 4844_5, 2014/04

 被引用回数:38 パーセンタイル:81.97(Multidisciplinary Sciences)

Current-induced spin polarization (CISP) on the outermost surfaces of Au, Cu, Pt, Pd, Ta, and W nanoscaled films were studied using a spin-polarized positron beam. The Au and Cu surfaces showed no significant CISP. In contrast, the Pt, Pd, Ta, and W films exhibited large CISP (3 to 15% per input charge current of 10$$^{5}$$ A/cm$$^{2}$$) and the CISP of Ta and W were opposite to those of Pt and Pd. The sign of the CISP obeys the same rule in spin Hall effect suggesting that the spin-orbit coupling is mainly responsible for the CISP. The magnitude of the CISP is explained by the Rashba-Edelstein mechanism rather than the diffusive spin Hall effect. This settles a controversy, that which of these two mechanisms dominates the large CISP on metal surfaces.


Current-induced spin polarization on a Pt surface; A New approach using spin-polarized positron annihilation spectroscopy

河裾 厚男; 深谷 有喜; 前川 雅樹; Zhang, H.; 関 剛斎*; 吉野 達郎*; 齊藤 英治*; 高梨 弘毅*

Journal of Magnetism and Magnetic Materials, 342, p.139 - 143, 2013/09

 被引用回数:19 パーセンタイル:62.52(Materials Science, Multidisciplinary)


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