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Ding, H.*; 伊藤 啓太*; 遠藤 恭*; 高梨 弘毅; 関 剛斎*
Journal of Physics D; Applied Physics, 57(38), p.385002_1 - 385002_10, 2024/09
This paper reports the systematic study on the structure, magnetic properties and magnetoelastic properties for the Fe
Ga
(001) thin films epitaxially grown on the different substrates of GaAs(001) and MgO(001) using the sputtering technique. The alloy composition dependence of effective magnetoelastic coupling coefficient B
along the FeGa [110] direction indicated that the largest magnetoelastic coupling was obtained for the Fe-Ga layer with x = 30 grown on the MgO substrate. Considering the results of structural analysis and magnetization measurement, the different crystallite sizes depending on the kind of substrate may give rise to the different magnetoelastic coupling strengths between the Fe-Ga layers on the MgO and the GaAs. The magnetostriction along the FeGa [111] direction was also estimated with the assumption of plausible elastic property of Fe-Ga, and showed the values comparable to the reported value of bulk Fe-Ga. This means the large magnetostriction can be obtained even for the Fe-Ga thin films epitaxially grown not only on the GaAs(001) but also on the MgO(001). The findings in this work will give a guideline for designing spintronic applications with a Fe-Ga layer exhibiting a large magnetoelastic coupling.
川井 清司*; 曽我部 知史*; 中川 洋; 山田 武*; 小関 成樹*
Journal of Food Engineering, 375, p.112066_1 - 112066_9, 2024/08
本研究の目的は、様々な水分活性(aw)条件下における凍結乾燥細菌の機械的ガラス転移および動的転移に及ぼすグリセロールおよびグルコースの影響を明らかにすることである。水分収着等温線から、各awにおける含水率および単分子膜含水率は、グリセロール、グルコース、無添加試料の順に高くなることがわかった。試料中の原子の平均二乗変位(MSD)に対する温度の影響を非干渉性中性子弾性散乱により調べた。MSDは温度の上昇に伴い、重水素及び添加溶質に依存して徐々に増加した。線形フィッティングから、3つの動的転移温度(低Tds、中Tds、高Tds)が決定された。Couchman-Karaszモデルは、添加された溶質とバクテリアは完全には混和しないことを示唆した。
関 剛斎*; 内田 健一*; 高梨 弘毅
Journal of Physics; Condensed Matter, 36(33), p.333001_1 - 333001_11, 2024/05
Spin caloritronics, a research field studying on the interconversion between a charge current (J
) and a heat current (J
) mediated by a spin current (J
) and/or magnetization (M), has attracted much attention not only for academic interest but also for practical applications. Newly discovered spin-caloritronic phenomena such as the spin Seebeck effect (SSE) have stimulated the renewed interest in the thermoelectric phenomena of a magnet, which have been known for a long time, e.g. the anomalous Nernst effect (ANE). These spin-caloritronic phenomena involving the SSE and the ANE have provided with a new direction for thermoelectric conversion exploiting J and/or M. Importantly, the symmetry of ANE allows the thermoelectric conversion in the transverse configuration between J and J. Although the transverse configuration is totally different from the conventional longitudinal configuration based on the Seebeck effect and has many advantages, we are still facing several issues that need to be solved before developing practical applications. The primal issue is the improvement of conversion efficiency. In the case of ANE-based applications, a material with a large anomalous Nernst coefficient (S
) is the key for solving the issue. This review article introduces the increase of S can be achieved by forming superlattice structures, which has been demonstrated for several kinds of materials combinations. The overall picture of studies on spin caloritronics is first surveyed. Then, we mention the pioneering work on the transverse thermoelectric conversion in superlattice structures, which was performed using Fe-based metallic superlattices, and show the recent studies for the Ni-based metallic superlattices and the ordered alloy-based metallic superlattices.
山崎 匠*; 平井 孝昌*; 八木 貴志*; 山下 雄一郎*; 内田 健一*; 関 剛斎*; 高梨 弘毅
Physical Review Applied (Internet), 21(2), p.024039_1 - 024039_11, 2024/02
被引用回数：0 パーセンタイル：0.00(Physics, Applied)This study presents a measurement method for determining the figure of merit for transverse thermoelectric conversion in thin-film forms. Leveraging the proposed methodology, we comprehensively investigate the transverse thermoelectric coefficient, in-plane electrical conductivity, and out-of-plane thermal conductivity in epitaxial and polycrystalline Fe/Pt metallic multilayers.
Fe
Mn
Si heusler alloy thin filmsNabialek, A.*; Chumak, O.*; 関 剛斎*; 高梨 弘毅; Baczewski, L. T.*; Szymczak, H.*
IEEE Transactions on Magnetics, 59(11), p.2501405_1 - 2501405_5, 2023/11
The anisotropic magnetoelastic (ME) properties of epitaxial CoFeMnSi(CFMS) Heusler alloy thin films with thicknesses ranging from 8 to 100 nm were investigated using the strain-modulated ferromagnetic resonance (SMFMR) technique. The calculation of the first cubic magnetocrystalline (MC) constant 
and the two cubic ME constants 
and was carried out assuming the cubic symmetry of the magnetic layer. A significant negative perpendicular MC anisotropy, of the order of 10
J/m
, was also observed. The investigated parameters were found to be dependent on the thickness of the magnetic layer. The thinnest magnetic layers showed the strongest cubic MC anisotropy and the weakest anisotropy of ME properties. These findings highlight the importance of considering the magnetic layer thickness when evaluating the anisotropy in the ME properties of Heusler alloy thin films.
廣畑 貴文*; Lloyd, D. C.*; 窪田 崇秀*; 関 剛斎*; 高梨 弘毅; 介川 裕章*; Wen, Z.*; 三谷 誠司*; 小泉 洸生*
IEEE Access, 11, p.117443 - 117459, 2023/10
Spintronic devices are expected to replace the recent nanoelectronic memories and sensors due to their efficiency in energy consumption and functionality with scalability. To date, spintronic devices, namely magnetoresistive junctions, employ ferromagnetic materials by storing information bits as their magnetization directions. However, in order to achieve further miniaturization with maintaining and/or improving their efficiency and functionality, new materials development is required: 1) increase in spin polarization of a ferromagnet or 2) replacement of a ferromagnet by an antiferromagnet. Antiferromagnetic materials have been used to induce an exchange bias to the neighboring ferromagnet but they have recently been found to demonstrate a 100% spin-polarized electrical current, up to THz oscillation and topological effects. In this review, the recent development of three types of antiferromagnets is summarized with offering their future perspectives towards device applications.
山崎 匠*; 関 剛斎*; 窪田 崇秀*; 高梨 弘毅
Applied Physics Express, 16(8), p.083003_1 - 083003_4, 2023/08
We report the effect of the epitaxial growth of NiO films on its spin current transmission. Two sample series of Pt/NiO/CoFeB, including epitaxial and polycrystalline NiO, were prepared using different deposition conditions. The spin current transmission of NiO is evaluated using the thermo-spin effects in the trilayers. Epitaxial NiO exhibits a non-monotonic behavior in the NiO thickness dependence of spin current transmission, while this behavior is smeared out in polycrystalline NiO. The non-monotonic behavior implies the presence of multiple spin transport mechanisms, which becomes apparent with epitaxial growth.
増田 啓人*; 山根 結太*; 関 剛斎*; Raab, K.*; 土肥 昂尭*; Modak, R.*; 内田 健一*; 家田 淳一; Kl
ui, M.*; 高梨 弘毅
Applied Physics Letters, 122(16), p.162402_1 - 162402_7, 2023/04
被引用回数：1 パーセンタイル：44.21(Physics, Applied)We report current-induced magnetization switching in Pt/Co/Ir/Co/Pt multilayers with different Ir layer thicknesses (
), where the perpendicularly magnetized Co layers are coupled ferromagnetically or antiferromagnetically through an interlayer exchange coupling and are sandwiched by the Pt spin Hall layers. The domain structures formed during switching vary depending on the magnetization alignment, i.e., ferromagnetically coupled or antiferromagnetically coupled configuration. These results clarify the macroscopic picture of switching process for interlayer exchange-coupled systems. The local picture of the switching process is also examined by a numerical calculation based on a macrospin model, which reveals the switching dynamics triggered by dual spin-orbit torque for both antiferromagnetically and ferromagnetically coupled cases. The numerical calculation shows that the dual spin-orbit torque from the two Pt layers effectively acts on the two Co layers not only for the antiferromagnetically coupled case but also for the ferromagnetically coupled one. Our findings deepen the under- standing of the switching mechanism in a magnetic multilayer and provide an avenue to design spintronic devices with more efficient spin-orbit torque switching.
Zhou, Z.*; Frost, W.*; Lloyd, D. C.*; 関 剛斎*; 窪田 崇秀*; Ramos, R.*; 齊藤 英治; 高梨 弘毅; 廣畑 貴文*
Journal of Magnetism and Magnetic Materials, 571, p.170575_1 - 170575_5, 2023/04
被引用回数：0 パーセンタイル：0.00(Materials Science, Multidisciplinary)Recent development in neuromorphic computation allows us to achieve low power and highly efficient calculations better than the conventional von Neumann computation. In order to achieve realistic synaptic operation, potentiation to add weighting to strengthen a selected artificial synapse. Such functionality can be achieved by reducing the electrical resistance of the artificial synapse. Recently, a ferromagnetic Heusler alloy used in a magnetoresistive junction has been demonstrated to crystallise via the layer-by-layer mode by introducing an electrical current pulse. In this study, we have extended the current-induced crystallisation to a junction with epitaxially-grown Heusler alloy after post-annealing for crystallisation. By combining this potentiation functionality with the neuromorphic operation, realistic synaptic computation can be developed.
MnSi重田 出*; Oku, Shuta*; 窪田 崇秀*; 木村 尚次郎*; 関 剛斎*; 篠崎 文重*; 淡路 智*; 高梨 弘毅; 廣井 政彦*
AIP Advances (Internet), 13(2), p.025116_1 - 025116_5, 2023/02
Superconducting properties were investigated in epitaxially layered films consisting of superconductor NbN and half-metallic Heusler alloy CoMnSi(CMS). Temperature dependence of the electrical resistivity 
(T) was measured by applying perpendiar magnetic fields to the surface of NbN/CMS films. With the increase of the CMS thickness 
, the upper critical field 
H
decreased monotonically, but the superconducting transition temperature T
had the minimum of 10.1 K at 
5 nm. The T behavior was in qualitative agreement with the theory of the 
-coupling. The pair-breaking parameter 
determined by the superconducting fluctuation theory took the maximum at = 3
5 nm, which would be related to the minimum of 
. The experimental results reveal that the superconductivity of the NbN layer in NbN/CMS films is affected by the interplay between the superconducting NbN layer and the half-metallic CMS layer.
曽我部 知史*; 中川 洋; 山田 武*; 小関 成樹*; 川井 清司*
Biophysical Journal, 121(20), p.3874 - 3882, 2022/10
被引用回数：2 パーセンタイル：34.79(Biophysics)本研究の目的は、バクテリア(
)のガラス転移挙動を水分活性(
)の関数として明らかにすることである。298Kでの機械的緩和を調べ、機械的
(298Kで機械的ガラス転移が起こる)を0.667と決定した。平均二乗変位の温度依存性は、中性子非弾性散乱により調べた。フィッティングにより、2つの動的転移温度(low 
とhigh )が決定された。乾燥試料を除いて、低Tdに対するの影響はわずかであった。高
はの減少に伴い大きく上昇した。高で決定された動的(0.688)は、測定時間スケールが異なるため、機械的よりもわずかに高い値であった。高をガラス転移温度(
)に変換し、無水は411Kと推定された。
増田 啓人*; 関 剛斎*; 山根 結太*; Modak, R.*; 内田 健一*; 家田 淳一; Lau, Y.-C.*; 深見 俊輔*; 高梨 弘毅
Physical Review Applied (Internet), 17(5), p.054036_1 - 054036_9, 2022/05
被引用回数：6 パーセンタイル：69.05(Physics, Applied)反対称層間交換結合(AIEC)が最近発見され、人工反強磁性体(SAF)の傾角磁化の誘起を通じた磁化スイッチングにおいて極めて重要な役割を果たしている。本研究では、くさび形の層を持つ垂直磁化多層膜Pt/Co/Ir/Co/Ptにおける大きなAIECを報告をする。AIECの有効磁場は、対称的な層間交換結合に関連しており、AIECを強化するための指針を提供する。SAFに対する拡張Stoner-Wohlfarthモデルを開発し、その磁化スイッチングの重要な要素を明らかにする。理論的知識と実験結果を組み合わせることで、面内磁場のみによる垂直磁化スイッチングが達成される。
Frost, W.*; 関 剛斎*; 窪田 崇秀*; Ramos, R.*; 齊藤 英治; 高梨 弘毅*; 廣畑 貴文*
Applied Physics Letters, 118(17), p.172405_1 - 172405_5, 2021/04
被引用回数：1 パーセンタイル：7.12(Physics, Applied)We demonstrate that the spin-Seebeck effect can be used to estimate the volume of edge domains formed in a giant magnetoresistive (GMR) device. The thermal gradient induced by Joule heating can be harnessed by the addition of a ferromagnetically insulating channel of Fe
O
on the sides of the GMR pillar. This generates a spin wave in FeO, which couples with the free-layer edge magnetization and controls the reversal of the ferromagnetic layers in one direction only, increasing the current density from 
A/cm
to 
A/cm. By simple assumption, we estimate the effect of the edge domain on magnetization reversal to be 
by spin-transfer torque.
Zhou, W.*; 関 剛斎*; 今村 裕志*; 家田 淳一; 高梨 弘毅*
Physical Review B, 100(9), p.094424_1 - 094424_5, 2019/09
被引用回数：6 パーセンタイル：31.91(Materials Science, Multidisciplinary)The generation of the spinmotive force (SMF) requires the temporal and spatial variations of the magnetic moments. We explore an approach to satisfy this requirement by creating asymmetry in a thin film structure along the out-of-plane direction, through the use of an exchange-coupled 
1-FePt / Ni
Fe
bilayer element. As the spin wave is excited by rf magnetic field, a continuous dc voltage signal along the out-of-plane direction of the bilayer element appears. The sign of the voltage signal and its microwave power dependency agree with the theoretical framework of the SMF. The corresponding spin wave modes are revealed by carrying out the micromagnetic simulation. Our results demonstrate the generation of the SMF using a vertically structured element in addition to previously reported in-plane structured devices.
長谷川 和男; 金正 倫計; 小栗 英知; 山本 風海; 林 直樹; 山崎 良雄; 内藤 富士雄*; 吉井 正人*; 外山 毅*; 山本 昇*; et al.
Proceedings of 16th Annual Meeting of Particle Accelerator Society of Japan (インターネット), p.1235 - 1239, 2019/07
J-PARCでは2018年の夏季メンテナンス終了後、3GeVシンクロトロン(RCS)からビームを供給する物質・生命科学実験施設(MLF)での利用運転を10月下旬から再開した。出力は夏前の500kWと同じであるが、リニアックのピークビーム電流値を、夏前の40mAから定格の50mAに上げた。一方、スーパーカミオカンデの改修やハドロン実験施設の保守や整備などもあり、30GeVのメインリング(MR)のビーム運転は休止したが、利用運転は2月中旬からハドロン実験施設向けに51kWで再開した。しかし3月18日、MRへの入射ビームラインでの偏向電磁石1台に不具合が発生し、仮復旧で4月5日に利用運転を再開したが、再度不具合が発生し4月24日に夏前の利用運転を終了した。2018年度の稼働率は、リニアック, RCSともに安定でMLF向けは94%、ニュートリノとハドロン実験施設向けは86%、74%であった。ここでは、こうした1年間の運転経験を報告する。
齊藤 宏; 野澤 隆; 武宮 博; 関 暁之; 松原 武史; 斎藤 公明; 北村 哲浩
JAEA-Review 2017-040, 34 Pages, 2018/03
JAEA-Review-2017-040.pdf:9.52MB
平成23年3月11日に福島第一原子力発電所の事故が発生し環境中へ大量の放射性物質が放出された。これらは自然の駆動力によって移動、生活圏に到達し健康等に影響を及ぼす可能性が懸念されており、事故状況の把握や影響評価や対策のため調査研究が多く行われている。原子力機構は、取得データと関係省庁等が取得した公開データを収集・整理し「環境モニタリングデータベース」として公開している。また、これらデータ及び既存または開発した計算コードを用いて「統合解析支援環境」の中で事故後の状況再現や将来予測のため解析を行っている。また、これら知見は他研究機関の成果とあわせ「環境回復知識ベース」として一般の方々が理解できるよう公開ウェブサイトにQ&A方式で公開している。これら三要素を包含し「福島の環境回復に係る包括的評価システム」と呼ぶ。これらは本来は相互に関連し一システムとして機能すべきところ、現状では独立して機能している。また、十分にオープンで理解しやすい形で外部に発信されているとは言えない。そこで、データや成果に対しより理解を深めることができ求める情報に容易にたどり着けるよう、当システム全体及び各要素の整備を行っていく。
小松 和三*; 関 健史*; 長縄 明大*; 岡 潔*; 西村 昭彦
保全学, 16(3), p.89 - 95, 2017/10
原子炉伝熱管内壁検査補修技術として1インチ内径の伝熱管の内壁を検査補修できるレーザー加工ヘッドの検査改良を行った。次世代高速炉では1/2インチ内径の伝熱管が使用されることから、これに対応したレーザー加工ヘッドを設計した。光ファイバスコープを中心に据え、中心軸上に据え付けた45度のミラーを直動方向と回転方向の2方向に移動させる定在波型アクチュエーターを組み込んだ。試作機は良好に動作し、1/2インチ内径の伝熱管の内壁を観察補修できる性能を有することが試験により明らかとなった。
大島 武; 横関 貴史; 村田 航一; 松田 拓磨; 三友 啓; 阿部 浩之; 牧野 高紘; 小野田 忍; 土方 泰斗*; 田中 雄季*; et al.
Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01
被引用回数：14 パーセンタイル：54.35(Physics, Applied)In this study, we report the effects of 
-ray irradiation and subsequent annealing on the electrical characteristics of vertical structure power 4H Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the blocking voltage of 1200 V. The MOSFETs were irradiated with -rays up to 1.2 MGy in a N atmosphere at room temperature (RT). During the irradiation, no bias was applied to each electrode of the MOSFETs. After the irradiation, the MOSFETs were kept at RT for 240 h to investigate the stability of their degraded characteristics. Then, the irradiated MOSFETs were annealed up to 360 
C in the atmosphere. The current-voltage (I-V) characteristics of the MOSFETs were measured at RT. By 1.2 MGy irradiation, the shift of threshold voltage (V
) for the MOSFETs was -3.39 V. After RT preservation for 240 h, MOSFETs showed no significant recovery in V. By annealing up to 360 C, the MOSFETs showed remarkable recovery, and the values of V become 91 % of the initial values. Those results indicate that the degraded characteristics of SiC MOSFETs can be recovered by thermal annealing at 360 C.
土方 泰斗*; 三友 啓*; 松田 拓磨*; 村田 航一*; 横関 貴史*; 牧野 高紘; 武山 昭憲; 小野田 忍; 大久保 秀一*; 田中 雄季*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11
In order to develop semiconductor devices with MGy radiation resistivity, we are developing power metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on silicon carbide (SiC) semiconductors. The -ray irradiation responses of power SiC-MOSFETs were studied under various irradiation temperatures and humidity with various gate-bias conditions. Making comparisons between these responses, the optimum device operating condition and a better device structure were derived and MGy resistivity was achieved. Besides, -ray irradiation tests for a motor-driver circuits consisting of SiC-MOSFETs were carried out, and as a result, their continuous operation up to 2 MGy was confirmed.
武山 昭憲; 松田 拓磨; 横関 貴史; 三友 啓; 村田 航一; 牧野 高紘; 小野田 忍; 田中 雄季*; 神取 幹郎*; 吉江 徹*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
Influence of -ray irradiation under high temperature and high humidity circumstance on the electrical characteristics of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. The drain current (I
)-gate voltage (V
) curves shifted to the negative voltage side and no significant further shift was observed with increasing the dose above 10 kGy. Suppression of the negative shift of threshold voltage (V
) means that positive charges generated by irradiation were thermally annealed by elevated temperature during irradiation. The leakage current slightly increased at 5 and 10 kGy, however, those values recovered to be approximately the initial value above 40 kGy. Humidity circumstance attributed to remarkable suppression of the leakage current in comparison with dry circumstance.
