Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Sn nanodot佐藤 佑磨*; 竹内 祐太郎*; 山根 結太*; Yoon, J.-Y.*; 金井 駿*; 家田 淳一; 大野 英男*; 深見 俊輔*
Applied Physics Letters, 122(12), p.122404_1 - 122404_5, 2023/03
被引用回数：0 パーセンタイル：0(Physics, Applied)
-MnSn, an antiferromagnet having a non-collinear spin structure in a kagome lattice, has attracted great attention owing to various intriguing properties such as large anomalous Hall effect. Stability of magnetic state against thermal fluctuation, characterized in general by the thermal stability factor 
, has been well studied in ferromagnetic systems but not for antiferromagnets. Here we study of the antiferromagnetic MnSn nanodots as a function of their diameter 
. To obtain , we measure the switching probability as a function of pulse-field amplitude and analyze the results based on a model developed by accounting for two and six-fold magnetic anisotropies in the kagome plane. We observe no significant change in down to 
nm below which it decreases with . The obtained dependence is well explained by a single-domain and nucleation-mediated reversal models. These findings provide a basis to understand the thermal fluctuation and reversal mechanism of antiferromagnets for device application.
Sn thin films by magneto-optical Kerr effect内村 友宏*; Yoon, J.-Y.*; 佐藤 佑磨*; 竹内 祐太郎*; 金井 駿*; 武智 涼太*; 岸 桂輔*; 山根 結太*; DuttaGupta, S.*; 家田 淳一; et al.
Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04
被引用回数：8 パーセンタイル：87.45(Physics, Applied)We perform a hysteresis-loop measurement and domain imaging for 
-oriented -Mn
Sn
thin films using magneto-optical Kerr effect (MOKE) and compare it with the anomalous Hall effect (AHE) measurement. We obtain a large Kerr rotation angle of 10 mdeg., comparable with bulk single-crystal MnSn. The composition 
dependence of AHE and MOKE shows a similar trend, suggesting the same origin, i.e., the non-vanishing Berry curvature in the momentum space. Magnetic domain observation at the saturated state shows that x dependence of AHE and MOKE is explained by an amount of reversible area that crucially depends on the crystalline structure of the film. Furthermore, in-depth observation of the reversal process reveals that the reversal starts with nucleation of sub-micrometer-scale domains dispersed in the film, followed by a domain expansion, where the domain wall preferentially propagates along the ![$$[11bar{2}0]$$](/search/images/ERNTCMK2MJQXE4ZSPUYF0JA.gif)
direction. Our study provides a basic understanding of the spatial evolution of the reversal of chiral-spin structure in non-collinear antiferromagnetic thin films.
竹内 祐太郎*; 山根 結太*; Yoon, J.-Y.*; 伊藤 隆一*; 陣内 佛霖*; 金井 駿*; 家田 淳一; 深見 俊輔*; 大野 英男*
Nature Materials, 20(10), p.1364 - 1370, 2021/10
被引用回数：62 パーセンタイル：98.57(Chemistry, Physical)Electrical manipulation of magnetic materials by current-induced spin torque constitutes the basis of spintronics. Recent studies have demonstrated electrical controls of ferromagnets and collinear antiferromagnets by spin-orbit torque (SOT). Here we show an unconventional response to SOT of a non-collinear antiferromagnet, which has recently attracted great attention owing to large anomalous Hall effect despite vanishingly small net magnetization. In heterostructures with epitaxial non-collinear antiferromagnet MnSn, we observe a characteristic fluctuation of Hall resistance, which is attributed to a persistent rotation of chiral-spin structure of MnSn driven by SOT. We find that level of the fluctuation that varies with sample size represents the number of magnetic domains of Mn
Sn. In addition, MnSn thickness dependence of critical current reveals that SOT generated by small current density below 20 MA cm
effectively acts on the chiral-spin structure even in thick MnSn above 20 nm. The results provide unprecedented pathways of electrical manipulation of magnetic materials, offering new-concept spintronics devices with unconventional functionalities and low-power consumption.
Sn thin filmsYoon, J.-Y.*; 竹内 祐太郎*; DuttaGupta, S.*; 山根 結太*; 金井 駿*; 家田 淳一; 大野 英男*; 深見 俊輔*
AIP Advances (Internet), 11(6), p.065318_1 - 065318_6, 2021/06
被引用回数：12 パーセンタイル：79.65(Nanoscience & Nanotechnology)We investigate the relationship between structural parameters, magnetic ordering, and the anomalous Hall effect (AHE) of MnSn (
) thin films annealed at various temperature 
. The crystal structure changes with and and at 
C near the stoichiometric composition (
) epitaxial single-phase 0
-MnSn(
) is obtained. At room temperature, a larger AHE is obtained when the single-phase epitaxial MnSn with the lattice constant closer to that of bulk is formed. The temperature dependence of the AHE shows different behaviors depending on and can be explained by considering the variation of magnetic ordering. A close inspection into the temperature and composition dependence suggests a variation of magnetic phase transition temperature with composition and/or a possible correlation between the AHE and Fermi level position with respect to the Weyl points. Our comprehensive study would provide the basis for utilizing the unique functionalities of non-collinear antiferromagnetic materials.
