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論文

Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque

竹内 祐太郎*; 山根 結太*; Yoon, J.-Y.*; 伊藤 隆一*; 陣内 佛霖*; 金井 駿*; 家田 淳一; 深見 俊輔*; 大野 英男*

Nature Materials, 20(10), p.1364 - 1370, 2021/10

 被引用回数:2 パーセンタイル:88.36(Chemistry, Physical)

Electrical manipulation of magnetic materials by current-induced spin torque constitutes the basis of spintronics. Recent studies have demonstrated electrical controls of ferromagnets and collinear antiferromagnets by spin-orbit torque (SOT). Here we show an unconventional response to SOT of a non-collinear antiferromagnet, which has recently attracted great attention owing to large anomalous Hall effect despite vanishingly small net magnetization. In heterostructures with epitaxial non-collinear antiferromagnet Mn$$_3$$Sn, we observe a characteristic fluctuation of Hall resistance, which is attributed to a persistent rotation of chiral-spin structure of Mn$$_3$$Sn driven by SOT. We find that level of the fluctuation that varies with sample size represents the number of magnetic domains of Mn$$_{3}$$Sn. In addition, Mn$$_3$$Sn thickness dependence of critical current reveals that SOT generated by small current density below 20 MA cm$$^{-2}$$ effectively acts on the chiral-spin structure even in thick Mn$$_3$$Sn above 20 nm. The results provide unprecedented pathways of electrical manipulation of magnetic materials, offering new-concept spintronics devices with unconventional functionalities and low-power consumption.

論文

Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn$$_{3+x}$$Sn$$_{1-x}$$ thin films

Yoon, J.-Y.*; 竹内 祐太郎*; DuttaGupta, S.*; 山根 結太*; 金井 駿*; 家田 淳一; 大野 英男*; 深見 俊輔*

AIP Advances (Internet), 11(6), p.065318_1 - 065318_6, 2021/06

 被引用回数:0 パーセンタイル:0(Nanoscience & Nanotechnology)

We investigate the relationship between structural parameters, magnetic ordering, and the anomalous Hall effect (AHE) of Mn$$_{3+x}$$Sn$$_{1-x}$$ ($$-0.42 le x le +0.23$$) thin films annealed at various temperature $$T_a$$. The crystal structure changes with $$x$$ and $$T_a$$ and at $$T_a ge 500$$ $$^circ$$C near the stoichiometric composition ($$-0.08 le x le +0.04$$) epitaxial single-phase $$D$$0$$_{19}$$-Mn$$_{3+x}$$Sn$$_{1-x}$$($$10bar{1}0$$) is obtained. At room temperature, a larger AHE is obtained when the single-phase epitaxial Mn$$_3$$Sn with the lattice constant closer to that of bulk is formed. The temperature dependence of the AHE shows different behaviors depending on $$T_a$$ and can be explained by considering the variation of magnetic ordering. A close inspection into the temperature and composition dependence suggests a variation of magnetic phase transition temperature with composition and/or a possible correlation between the AHE and Fermi level position with respect to the Weyl points. Our comprehensive study would provide the basis for utilizing the unique functionalities of non-collinear antiferromagnetic materials.

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