Electrical mutual switching in a noncollinear-antiferromagnetic-ferromagnetic heterostructure

ノンコリニア反強磁性-強磁性異種接合における電気的相互反転

Yoon, J.-Y.*; 竹内 祐太朗*; 武智 涼太*; Han, J.*; 内山 友宏*; 山根 結太*; 金井 駿*; 家田 淳一   ; 大野 英男*; 深見 俊輔*

Yoon, J.-Y.*; Takeuchi, Yutaro*; Takechi, Ryota*; Han, J.*; Uchiyama, Tomohiro*; Yamane, Yuta*; Kanai, Shun*; Ieda, Junichi; Ohno, Hideo*; Fukami, Shunsuke*

Spin-orbit torque (SOT) provides a promising mechanism for electrically encoding information in magnetic states. Unlike existing schemes, where the SOT is passively determined by the material and device structures, an active manipulation of the intrinsic SOT polarity would allow for flexibly programmable SOT devices. Achieving this requires electrical control of the current-induced spin polarization of the spin source. Here we demonstrate a proof-of-concept current-programmed SOT device. Using a noncollinear-anti-ferromagnetic/nonmagnetic/ferromagnetic MnSn/Mo/CoFeB hetero-structure at zero magnetic eld, we show current-induced switching in the CoFeB layer due to the spin current polarized by the magnetic structure of the MnSn; by properly tuning the driving current, the spin current from the CoFeB further reverses the magnetic orientation of the MnSn, which determines the polarity of the subsequent switching of the CoFeB. This scheme of mutual switching can be achieved in a spin-valve-like simple protocol because each magnetic layer serves as a reversible spin source and target magnetic electrode. It yields intriguing proof-of-concept functionalities for unconventional logic and neuromorphic computing.