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論文

Ablation of insulators under the action of short pulses of X-ray plasma lasers and free-electron lasers

Inogamov, N. A.*; Anisimov, S. I.*; Petrov, Y. V.*; Khokhlov, V. A.*; Zhakhovskii, V. V.*; Faenov, A. Ya.*; Pikuz, T.; Fortov, V. E.*; Skobelev, I. Y.*; 加藤 義章*; et al.

Journal of Optical Technology, 78(8), p.473 - 480, 2011/08

 被引用回数:5 パーセンタイル:31.11(Optics)

An experimental and theoretical study has been carried out of the ablation of a solid insulator with a wide band gap (LiF) under the action of ultrashort laser pulses of the UV range, obtained in a free-electron laser, and the soft X-ray region, obtained in a silver-plasma laser. A comparison is made of the results obtained on the two laser systems. It is shown that the ablation threshold is about the same for both lasers. A theory is presented that explains the weak growth of the ablation mass with increasing surface energy density of the laser radiation (the fluence) in the case of X-ray lasers as a result of the transition from spallation close to the ablation threshold to evaporative ablation at high fluence values.

論文

Nanoscale surface modifications and formation of conical structures at aluminum surface induced by single shot exposure of soft X-ray laser pulse

石野 雅彦; Faenov, A. Ya.*; 田中 桃子; 長谷川 登; 錦野 将元; 保 智己*; Pikuz, T. A.*; Inogamov, N. A.*; Zhakhovskii, V. V.*; Skobelev, I. Yu.*; et al.

Journal of Applied Physics, 109(1), p.013504_1 - 013504_6, 2011/01

 被引用回数:33 パーセンタイル:80.06(Physics, Applied)

軟X線レーザーによるアブレーション過程の理解を目的として、アルミニウム表面に軟X線レーザーを照射した。照射痕を走査型電子顕微鏡で観察したところ、アブレーション構造とは異なる微細構造(改質領域)が形成されていることを確認した。この領域には70-150nmの直径を持つ円錐状の構造物が多数確認できる。また、円錐構造は平均深さ約40nmの改質領域中に形成されていることもわかった。しかし、軟X線レーザーを複数回照射した領域の円錐構造は、成長することなく破壊されていることがわかった。今回得られた結果は、軟X線レーザーによるアブレーション過程の理解だけでなく、軟X線レーザーの微細加工への応用にも重要な知見を与えると考えられる。

論文

Interaction of short laser pulses in wavelength range from infrared to X-ray with metals, semiconductors, and dielectrics

Inogamov, N. A.*; Faenov, A. Ya.*; Zhakhovskii, V. V.*; Skobelev, I. Y.*; Khokhlov, V. A.*; 加藤 義章*; 田中 桃子; Pikuz, T. A.*; 岸本 牧; 石野 雅彦; et al.

Contributions to Plasma Physics, 51(4), p.361 - 366, 2010/05

 被引用回数:19 パーセンタイル:67.23(Physics, Fluids & Plasmas)

Laser-matter interaction is defined by an electric band structure of condensed matter and frequency of electromagnetic radiation. The thermalization processes are different for optical as compared with X-ray quanta and for metals relative to semiconductors and dielectrics, since the light absorption and electron-electron, electron-ion dynamics are sensitive to the electron population in a conduction band and the width of a forbidden gap. Although the thermalization processes are different, the final state is simply a heated matter. Laser heating creates powerful stresses in a target if duration of laser pulse $$tau$$$$_{L}$$ is short in acoustic time scale. Nucleation and material removal take place under such stresses. Such way of removal is called here the spallative ablation. Thus the spallative ablation is an ablation mechanism universally important for qualitatively different materials and quanta.

論文

Low-threshold ablation of dielectrics irradiated by picosecond soft X-ray laser pulses

Faenov, A. Y.; Inogamov, N. A.*; Zhakhovskii, V. V.*; Khokhlov, V. A.*; 西原 功修*; 加藤 義章*; 田中 桃子; Pikuz, T. A.*; 岸本 牧; 石野 雅彦; et al.

Applied Physics Letters, 94(23), p.231107_1 - 231107_3, 2009/06

 被引用回数:41 パーセンタイル:82.64(Physics, Applied)

Ablation of LiF crystal by soft X-ray laser pulses with wavelength 13.9 nm and duration 7 ps is studied experimentally and theoretically. It is found that a crater appears on a surface of LiF for XRL fluence, exceeding the ablation threshold 10.2 mJ/cm$$^{2}$$ in one shot, or 5 mJ/cm$$^{2}$$ in each of the three XRL shots. This is substantially below the ablation thresholds obtained with other lasers having longer pulse duration and/or longer wavelength. A new mechanism of thermomechanical ablation in large bandgap dielectrics is proposed. The theory explains the low ablation threshold via small attenuation depth, absence of light reflection, and electron heat conductivity.

論文

Plasma physics and radiation hydrodynamics in developing an extreme ultraviolet light source for lithography

西原 功修*; 砂原 淳*; 佐々木 明; 沼波 政倫*; 田沼 肇*; 藤岡 慎介*; 島田 義則*; 藤間 一美*; 古河 裕之*; 加藤 隆子*; et al.

Physics of Plasmas, 15(5), p.056708_1 - 056708_11, 2008/00

 被引用回数:106 パーセンタイル:97.57(Physics, Fluids & Plasmas)

Extreme ultraviolet (EUV) radiation from laser-produced plasma (LPP) has been thoroughly studied for application in mass-production of the next generation semiconductor devices. One critical issue for realization of a LPP-EUV light source for lithography is the conversion efficiency (CE) from incident laser power to EUV radiation of 13.5 nm wavelength (within 2% bandwidth). Another is solving a problem of damage caused by debris reaching a EUV collecting mirror. We here present an improved power balance model, which can be used for the optimization of laser and target conditions to obtain high CE. An integrated numerical simulation code has been developed for target design. The code is shown to agree well with experimental results not only for the CE but also for detailed EUV spectral structure. We propose a two pulse irradiation scheme for high CE and reduced ion debris using a carbon dioxides laser and a droplet or punch-out target.

論文

Theoretical simulation of extreme UV radiation source for lithography

藤間 一美*; 西原 功修*; 河村 徹*; 古河 裕之*; 香川 貴司*; 小池 文博*; More, R.*; 村上 匡且*; 西川 亘*; 佐々木 明; et al.

Emerging Lithographic Technologies VIII, Proceedings of SPIE Vol.5374, p.405 - 412, 2004/00

次世代リソグラフィ用EUV光源の設計指針を与えるために行っている、理論,シミュレーション研究について報告する。原子過程シミュレーションと輻射流体シミュレーションを開発し、プラズマの温度,密度分布,放射X線スペクトル,13.5nm帯の放射への変換効率を評価する。ターゲットとして用いるXeやSnプラズマの複雑な原子過程の解析をより正確に行うため、複数の原子データコード(Hullac, Grasp等)とモデル計算(平均原子モデル),基礎的な分光実験を行い結果を相互に比較する。阪大レーザー研の激光XII号レーザーを用いて測定されたSnプラズマのEUV変換効率の解析を行う。

口頭

Low threshold ablation of large bandgap LiF dielectrics induced by picosecond soft X-ray laser pulses

Faenov, A. Y.; Inogamov, N. A.*; Zhakhovskii, V.*; Khokhlov, V. A.*; 西原 功修*; 加藤 義章*; 田中 桃子; Pikuz, T.*; 岸本 牧; 石野 雅彦; et al.

no journal, , 

Experimental and theoretical investigations of large bandgap LiF dielectrics ablation threshold induced by 7 ps 13.9 nm XRL pulses were performed. LiF crystal threshold is about 1600, 210 and 8 times smaller compare with LiF crystal thresholds measured previously for ns and fs visible lasers and ns 46.9 nm soft XRL, correspondently.

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