※ 半角英数字
 年 ~ 
検索結果: 19 件中 1件目~19件目を表示
  • 1


Initialising ...



Initialising ...


Initialising ...


Initialising ...


Initialising ...


Initialising ...


Initialising ...


Initialising ...



Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque

竹内 祐太郎*; 山根 結太*; Yoon, J.-Y.*; 伊藤 隆一*; 陣内 佛霖*; 金井 駿*; 家田 淳一; 深見 俊輔*; 大野 英男*

Nature Materials, 20(10), p.1364 - 1370, 2021/10

 被引用回数:2 パーセンタイル:88.36(Chemistry, Physical)

Electrical manipulation of magnetic materials by current-induced spin torque constitutes the basis of spintronics. Recent studies have demonstrated electrical controls of ferromagnets and collinear antiferromagnets by spin-orbit torque (SOT). Here we show an unconventional response to SOT of a non-collinear antiferromagnet, which has recently attracted great attention owing to large anomalous Hall effect despite vanishingly small net magnetization. In heterostructures with epitaxial non-collinear antiferromagnet Mn$$_3$$Sn, we observe a characteristic fluctuation of Hall resistance, which is attributed to a persistent rotation of chiral-spin structure of Mn$$_3$$Sn driven by SOT. We find that level of the fluctuation that varies with sample size represents the number of magnetic domains of Mn$$_{3}$$Sn. In addition, Mn$$_3$$Sn thickness dependence of critical current reveals that SOT generated by small current density below 20 MA cm$$^{-2}$$ effectively acts on the chiral-spin structure even in thick Mn$$_3$$Sn above 20 nm. The results provide unprecedented pathways of electrical manipulation of magnetic materials, offering new-concept spintronics devices with unconventional functionalities and low-power consumption.


Spin colossal magnetoresistance in an antiferromagnetic insulator

Qiu, Z.*; Hou, D.*; Barker, J.*; 山本 慧; Gomonay, O.*; 齊藤 英治*

Nature Materials, 17(7), p.577 - 580, 2018/05

 被引用回数:71 パーセンタイル:96.98(Chemistry, Physical)



Liquid-like thermal conduction in intercalated layered crystalline solids

Li, B.; Wang, H.*; 川北 至信; Zhang, Q.*; Feygenson, M.*; Yu, H. L.*; Wu, D.*; 尾原 幸治*; 菊地 龍弥*; 柴田 薫; et al.

Nature Materials, 17(3), p.226 - 230, 2018/03

 被引用回数:71 パーセンタイル:96.98(Chemistry, Physical)

As a generic property, all substances transfer heat through microscopic collisions of constituent particles. A solid conducts heat through both transverse and longitudinal acoustic phonons, but a liquid employs only longitudinal vibrations. As a result, a solid is usually thermally more conductive than a liquid. In canonical viewpoints, such a difference also serves as the dynamic signature distinguishing a solid from a liquid. Here, we report liquid-like thermal conduction observed in the crystalline AgCrSe$$_{2}$$. The transverse acoustic phonons are completely suppressed by the ultrafast dynamic disorder while the longitudinal acoustic phonons are strongly scattered but survive, and are thus responsible for the intrinsically ultralow thermal conductivity. This scenario is applicable to a wide variety of layered compounds with heavy intercalants in the van der Waals gaps, manifesting a broad implication on suppressing thermal conduction. These microscopic insights might reshape the fundamental understanding on thermal transport properties of matter and open up a general opportunity to optimize performances of thermoelectrics.


Isolated electron spins in silicon carbide with millisecond coherence times

Christle, D.*; Falk, A.*; Andrich, A.*; Klimov, P.*; Hassan, J.*; Son, N. T.*; Janz$'e$n, E.*; 大島 武; Awschalom, D.*

Nature Materials, 14(2), p.160 - 163, 2015/02

 被引用回数:244 パーセンタイル:99.22(Chemistry, Physical)

Carbon vacancy - silicon vacancy pair (V$$_{C}$$-V$$_{Si}$$) in silicon carbide (SiC) is regarded as a promising candidate for a qubit for quantum computing since V$$_{C}$$-V$$_{Si}$$ is thought to have electronic states with sharp optical and spin transitions. However, single spin operation using V$$_{C}$$-V$$_{Si}$$ has not yet been succeeded although it was revealed that V$$_{C}$$-V$$_{Si}$$ shows the characteristics as a single photon source (SPS). In this study, we studied spin properties of V$$_{C}$$-V$$_{Si}$$ created in SiC by 2 MeV-electron irradiation. First, we found V$$_{C}$$-V$$_{Si}$$ in SiC using a confocal microscope (CFM) and measured their optical detected magnet resonance (ODMR) at 20 K. Then, their spin coherence was measured from the standard two-pulse Hahn-echo sequence using ODMR. As a result, the spin coherence time exceeding 1 ms was obtained.


Coherent control of single spins in silicon carbide at room temperature

Widmann, M.*; Lee, S.-Y.*; Rendler, T.*; Son, N. T.*; Fedder, H.*; Paik, S.*; Yang, L.-P.*; Zhao, N.*; Yang, S.*; Booker, I.*; et al.

Nature Materials, 14(2), p.164 - 168, 2015/02

 被引用回数:309 パーセンタイル:99.49(Chemistry, Physical)

Single silicon vacancy (V$$_{Si}$$) in silicon carbide (SiC) was studied from the point of view of single photon source for quantum computing. The V$$_{Si}$$ centers were created in high purity semi-insulating hexagonal (4H)-SiC by 2 MeV electron irradiation with fluences up to 5$$times$$10$$^{15}$$ /cm$$^{2}$$. No subsequent annealing was carried out. A couple of solid immersion lens (SIL) with 20 $$mu$$m diameter were created on samples by ion milling using 40 keV Ga focused ion beam. A typical home-built confocal setup was used after optimizing for emission in the wavelength range around 900 nm. As a result, optically detected electron spin resonance (ODMR) for V$$_{Si}$$ was observed at room temperature (RT). Using ODMR, Rabi oscillations were also observed, and the Rabi frequency increased with increasing applied-magnetic field. In addition, spin relaxation time T$$_{1}$$ and T$$_{2}$$ were detected to be 500 $$mu$$s and 160 $$mu$$s, respectively.


Electric control of the spin Hall effect by intervalley transitions

岡本 尚也*; 紅林 秀和*; Trypiniotis, T.*; Farrer, I.*; Ritchie, D. A.*; 齊藤 英治; Sinova, J.*; Ma$v{s}$ek, J.*; Jungwirth, T.*; Barnes, C.*

Nature Materials, 13(10), p.932 - 937, 2014/10

 被引用回数:38 パーセンタイル:85.73(Chemistry, Physical)

Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect has become increasingly important for generating, detecting and using spin currents, but its strength-quantified in terms of the SHE angle-is ultimately fixed by the magnitude of the spin-orbit coupling present for any given material system. However, if the electrons generating the SHE can be controlled by populating different areas of the electronic structure with different SOC characteristic the SHE angle can be tuned directly within a single sample. Here we report the manipulation of the SHE in bulk GaAs at room temperature by means of an electrical intervalley transition induced in the conduction band. The spin Hall angle was determined by measuring an electromotive force driven by photoexcited spin-polarized electrons drifting through GaAs Hall bars. By controlling electron populations in different valleys, we manipulated the angle from 0.0005 to 0.02. This change by a factor of 40 is unprecedented in GaAs and the highest value achieved is comparable to that of the heavy metal Pt.


A Silicon carbide room-temperature single-photon source

Castelletto, S.*; Johnson, B.*; Ivady, V.*; Stavrias, N.*; 梅田 享英*; Gali, A.*; 大島 武

Nature Materials, 13(2), p.151 - 156, 2014/02

 被引用回数:312 パーセンタイル:99.38(Chemistry, Physical)

単一フォトンの発生や検出は量子力学の実験的な基盤や計測理論に重要な役割を示す。また、効率的、高品質の単一発光源は量子情報等の実現にとって不可欠と考えられている。本研究では、室温においても非常に明るく安定な炭化ケイ素(SiC)中の単一発光源の形成と同定に成功した。この単一発光源はSiC中のシリコンサイトを炭素で置換した炭素アンチサイト(C$$_{Si}$$)と炭素空孔(V$$_{C}$$)の複合欠陥(C$$_{Si}$$V$$_{C}$$)として知られる点欠陥であり、高純度SiCに対して、電子線照射と照射後の熱処理を組み合わせることで形成が可能となる。非常に明るい光源(2$$times$$10$$^{6}$$ counts/s)であり、キャビティーの使用が無い場合においても高い量子効率が得られる。


Solution-processed organic spin-charge converter

安藤 和也*; 渡邉 峻一郎*; Mooser, S.*; 齊藤 英治; Sirringhaus, H.*

Nature Materials, 12(7), p.622 - 627, 2013/07

 被引用回数:139 パーセンタイル:97.61(Chemistry, Physical)



Unidirectional spin-wave heat conveyer

安 東秀*; Vasyuchka, V. I.*; 内田 健一*; Chumak, A. V.*; 山口 和也*; 針井 一哉; 大江 純一郎*; Jungfleisch, M. B.*; 梶原 瑛祐*; 安立 裕人; et al.

Nature Materials, 12(6), p.549 - 553, 2013/06

 被引用回数:102 パーセンタイル:96.17(Chemistry, Physical)

In this paper, we show a magnetically controllable heat flow caused by a spin-wave current. The direction of the flow can be switched by applying a magnetic field. When microwave energy is applied to a region of ferrimagnetic Y$$_{3}$$Fe$$_{5}$$O$$_{12}$$, an end of the magnet far from this region is found to be heated in a controlled manner and a negative temperature gradient towards it is formed. This is due to unidirectional energy transfer by the excitation of spin-wave modes without time-reversal symmetry and to the conversion of spin waves into heat. The magnetically controlled remote heating we observe is directly applicable to the fabrication of a heat-flow controller.


Spin-current-driven thermoelectric coating

桐原 明宏*; 内田 健一*; 梶原 瑛祐*; 石田 真彦*; 中村 泰信*; 眞子 隆志*; 齊藤 英治; 萬 伸一*

Nature Materials, 11(8), p.686 - 689, 2012/08

 被引用回数:202 パーセンタイル:98.62(Chemistry, Physical)

Energy harvesting technologies, which generate electricity from environmental energy, have been attracting great interest because of their potential to power ubiquitously deployed sensor networks and mobile electronics. Of these technologies, thermoelectric (TE) conversion is a particularly promising candidate, because it can directly generate electricity from the thermal energy that is available in various places. Here we show a novel TE concept based on the spin Seebeck effect, called "spin-thermoelectric (STE) coating", which is characterized by a simple film structure, convenient scaling capability, and easy fabrication. The STE coating, with a 60-nm-thick bismuth-substituted yttrium iron garnet (Bi:YIG) film, is applied by means of a highly efficient process on a non-magnetic substrate. Notably, spin-current-driven TE conversion is successfully demonstrated under a temperature gradient perpendicular to such an ultrathin STE-coating layer (amounting to only 0.01% of the total sample thickness). We also show that the STE coating is applicable even on glass surfaces with amorphous structures. Such a versatile implementation of the TE function may pave the way for novel applications making full use of omnipresent heat.


Spin caloritronics

Bauer, G. E. W.*; 齊藤 英治; Van Wees, B. J.*

Nature Materials, 11(5), p.391 - 399, 2012/05

 被引用回数:1155 パーセンタイル:98.32(Chemistry, Physical)



Long-range spin Seebeck effect and acoustic spin pumping

内田 健一*; 安立 裕人; 安 東秀*; 太田 岳*; 戸田 雅也*; Hillebrands, B.*; 前川 禎通; 齊藤 英治

Nature Materials, 10(10), p.737 - 741, 2011/10

 被引用回数:193 パーセンタイル:98.46(Chemistry, Physical)



Electrically tunable spin injector free from the impedance mismatch problem

安藤 和也*; 高橋 三郎; 家田 淳一; 紅林 秀和*; Trypiniotis, T.*; Barnes, C. H. W.*; 前川 禎通; 齊藤 英治

Nature Materials, 10(9), p.655 - 659, 2011/09

 被引用回数:220 パーセンタイル:98.75(Chemistry, Physical)

Injection of spin currents into solids is crucial for exploring spin physics and spintronics. There has been significant progress in recent years in spin injection into high-resistivity materials, for example, semiconductors and organic materials, which uses tunnel barriers to circumvent the impedance mismatch; the impedance mismatch between ferromagnetic metals and high-resistivity materials drastically limits the spin-injection efficiency. However, because of this problem, there is no route for spin injection into these materials through low-resistivity interfaces, that is, Ohmic contacts, even though this promises an easy and versatile pathway for spin injection without the need for growing high-quality tunnel barriers. Here we show experimental evidence that spin pumping enables spin injection free from this condition; room-temperature spin injection into GaAs from Ni$$_{81}$$Fe$$_{19}$$ through an Ohmic contact is demonstrated through dynamical spin exchange. Furthermore, we demonstrate that this exchange can be controlled electrically by applying a bias voltage across a Ni$$_{81}$$Fe$$_{19}$$/GaAs interface, enabling electric tuning of the spin-pumping efficiency.


Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves

福間 康裕*; Le, W.*; 井土 宏*; 高橋 三郎; 前川 禎通; 大谷 義近*

Nature Materials, 10(7), p.527 - 531, 2011/07

 被引用回数:150 パーセンタイル:97.64(Chemistry, Physical)

The non-local spin injection in lateral spin valves is strongly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin-valve voltage, which determines the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1$$mu$$V. Here we show that lateral spin valves with low-resistivity NiFe/MgO/Ag junctions enable efficient spin injection with high applied current density, which leads to the spin-valve voltage increasing 100-fold. Hanle effect measurements demonstrate a long-distance collective 2$$pi$$ spin precession along a 6-$$mu$$m-long Ag wire. These results suggest a route to faster and manipulable spin transport for the development of pure spin-current-based memory, logic and sensing devices.


Spin Seebeck insulator

内田 健一*; Xiao, J.*; 安立 裕人; 大江 純一郎; 高橋 三郎; 家田 淳一; 太田 岳*; 梶原 瑛祐*; 梅沢 浩光*; 河合 浩孝*; et al.

Nature Materials, 9(11), p.894 - 897, 2010/11

 被引用回数:884 パーセンタイル:99.87(Chemistry, Physical)

ゼーベック効果に代表される熱電発電は、次世代の省エネルギー技術には不可欠の機能である。これまでこの機能の発現には伝導電子の存在が必要であると思われてきたが、伝導電子の存在は熱デバイスの設計にとって不利であることが多いため、結果として伝導電子の存在が熱電発電の応用範囲を限定する原因となっていた。今回、われわれは絶縁体中を流れる熱流から電圧を生成することに成功したので、それを報告する。われわれが明らかにしたのは、磁性絶縁体LaY$$_{2}$$ Fe$$_{5}$$O$$_{12}$$が伝導電子を持たないのにもかかわらず、熱流をスピン圧に変換できるという事実である。このスピン圧は、LaY$$_{2}$$Fe$$_{5}$$O$$_{12}$$に貼付けられたPt薄膜中で生じる逆スピンホール効果を用いることで電圧に変換することができるため、熱流から電圧を生成することが可能となる。今回の実験結果を理解するためには、LaY$$_{2}$$Fe$$_{5}$$O$$_{12}$$とPtとの界面に働く、熱によるスピン交換相互作用を考える必要がある。われわれの発見は熱電変換素子となりうる物質の可能性を拡げ、そしてまたスピンゼーベック効果の背後に潜む物理を理解するための極めて重要な情報を与えた。


Extremely long quasiparticle spin lifetimes in superconducting aluminum using MgO tunnel spin injectors

Yang, H.*; Yang, S.-H.*; 高橋 三郎; 前川 禎通; Parkin, S.*

Nature Materials, 9(7), p.586 - 593, 2010/07

 被引用回数:76 パーセンタイル:92.43(Chemistry, Physical)



Lattice dynamics of the Zn-Mg-Sc icosahedral quasicrystal and its Zn-Sc periodic 1/1 approximant

de Boissieu, M.*; Francoual, S.*; Minalkovi$v{c}$, M.*; 柴田 薫; Baron, A. Q. R.*; Sidis, Y.*; 石政 勉*; Wu, D.*; Lograsso, T.*; Regnault, L.-P.*; et al.

Nature Materials, 6(12), p.977 - 984, 2007/12

 被引用回数:36 パーセンタイル:79.91(Chemistry, Physical)



Spin gap in Tl$$_2$$Ru$$_2$$O$$_7$$ and the possible formation of Haldane chains in three-dimensional crystals

Lee, S.*; Park, J.-G.*; Adroja, D. T.*; Khomskii, D.*; Streltsov, S.*; McEwen, K. A.*; 酒井 宏典; 吉村 一良*; Anisimov, V. I.*; 森 大輔*; et al.

Nature Materials, 5(6), p.471 - 476, 2006/06

 被引用回数:101 パーセンタイル:94.64(Chemistry, Physical)



Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth

内海 渉; 齋藤 寛之; 金子 洋*; 綿貫 徹; 青木 勝敏; 下村 理

Nature Materials, 2(11), p.735 - 738, 2003/11

 被引用回数:127 パーセンタイル:96.2(Chemistry, Physical)

現在、GaN系デバイスはサファイアなどの異種結晶基板上に成膜されているために、多くの転位が発生しその性能向上を阻害している。ホモエピタキシャル成長を可能とするGaN基板が切望されているが、その要請を満たす単結晶GaNを得ることは非常に難しい。高温でGaNがGaとN$$_{2}$$に分解してしまうため、融液の徐冷による標準的な単結晶育成法が利用できないためである。われわれは、放射光を用いた高温高圧下その場観察実験によって、GaNがある6万気圧以上の高圧下では分解することなく、一致溶融(congruent melting)し、その融液は温度を下げることによって可逆的にGaN結晶に戻ることを明らかにした。この事実は、高圧下でGaN組成の融液を徐冷することによって単結晶GaNを得ることができることを意味する。実際に、この手法により透明なGaN単結晶が得られ、ラマン散乱や単結晶X線振動写真などのキャラクタリゼーションの結果、非常に結晶性の良い試料であることが示唆された。

19 件中 1件目~19件目を表示
  • 1