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JAEA Reports

Conceptual study of $^{99}$ Mo production in JRR-3

Hirose, Akira; Komeda, Masao; Kinase, Masami; Sorita, Takami; Wada, Shigeru

JAEA-Technology 2010-007, 68 Pages, 2010/06

JAEA-Technology-2010-007.pdf:3.76MB

We investigated the production process of $^{99}$ Mo, which is parent nuclide of $^{99m}$ Tc, in JRR-3. $^{99m}$ Tc is most commonly used as a radiopharmaceutical in the field of nuclear medicine. Currently the supplying of $^{99}$ Mo is only dependent on imports from foreign countries, so JAEA is aiming at domestic production of a part of $^{99}$ Mo in cooperation with the industrial arena. This report presents the technical study for the production process of $^{99}$ Mo by using the neutron radiation method of (n,) reaction in JRR-3.

JAEA Reports

Conceptual design of JRR-3 automated silicon irradiation device for Neutron-Transmutation-Doped Silicon Semiconductor (NTD-Si) production

Hirose, Akira; Wada, Shigeru; Kusunoki, Tsuyoshi

JAEA-Technology 2007-033, 87 Pages, 2007/03

JAEA-Technology-2007-033.pdf:4.44MB

Neutron-Transmutation-Doped Silicon Semiconductor (NTD-Si) has good properties for the power device. In recent years the demand of NTD-Si has increased significantly due to mass production of hybrid-cars. We have been investigated the expansion technology of the NTD-Si productivity using the research reactors JRR-3, JRR-4 and JMTR of JAEA in order to meet the demand. The conceptual design of the automated silicon irradiation device using the JRR-3 Uniformity Irradiation System was carried out as one of the effective measures. After a Si ingot is irradiated once, it is turned over manually and irradiated again in order to irradiate the ingot uniformly. With the conventional equipment, it is necessary to wait radioactivity of the ingot decrease less than the permissible level with holding the ingot in the irradiation equipment. The waiting procedure takes 48 hours or more. Because the automated NTD-Si irradiation device reduces the manual operation process and the waiting time, it is effective to shorten the waiting period. This report is concerning the conceptual design of the automated silicon irradiation device for the JRR-3 Uniformity Irradiation System.

JAEA Reports

Development of the external cooling device to increase the Productivity of Neutron-Transmutation-Doped Silicon Semiconductor (NTD-Si) (Joint research)

Hirose, Akira; Wada, Shigeru; Sasajima, Fumio; Kusunoki, Tsuyoshi; Kameyama, Iwao*; Aizawa, Ryoji*; Kikuchi, Naoyuki*

JAEA-Technology 2006-059, 122 Pages, 2007/01

JAEA-Technology-2006-059.pdf:26.03MB

It is expected that the demand for NTD-Si increases rapidly because of recent productive increase of hybrid-cars. In order to meet the demand, we have investigated the expansion technology of the NTD-Si productivity using the JRR3. This report describes the production of equipment for the external cooling device while proposed as one of the result of the investigation for the JRR-3 uniformity irradiation equipment. After an ingot was irradiated once, it is turned over manually and irradiated again in order irradiate the ingot uniformly. With the conventional equipment, it was necessary to wait the radioactivity of ingot decrease less than the permissible level with holding the ingot in the irradiation equipment. It was effective to shorten the waiting period by using an external cooling device for production increase of NTD-Si. It is expected that the productivity of NTD-Si will be increased by using the external cooling device.

JAEA Reports