Room-temperature flexible manipulation of the quantum-metric structure in a topological chiral antiferromagnet

Han, J.*; Uchimura, Tomohiro*; Araki, Yasufumi; Yoon, J.-Y.*; Takeuchi, Yutaro*; Yamane, Yuta*; Kanai, Shun*; Ieda, Junichi; Ohno, Hideo*; Fukami, Shunsuke*

Nature Physics, 21 Pages, 2024/04

https://doi.org/10.1038/s41567-024-02476-2

Quantum metric and Berry curvature are two fundamental and distinct factors to describe the geometry of quantum eigenstates. While Berry curvature is known for playing crucial roles in several condensed-matter states, quantum metric, which was predicted to induce new classes of topological phenomena, has rarely been touched, particularly in an ambient circumstance. Using a topological chiral antiferromagnet MnSn adjacent to Pt, at room temperature, we successfully manipulate the quantum-metric structure of electronic states through its interplay with the nanoscale spin texture at the MnSn/Pt interface. This is manifested by a time-reversal-odd second-order Hall effect that is robust against extrinsic electron scattering, in contrast to any transport effects from the Berry curvature. We also verify the flexibility of controlling the quantum-metric structure, as the interacting spin texture can be tuned by moderate magnetic fields or by interface engineering via spin-orbit interactions. Our work paves a way for harnessing the quantum-metric structure to unveil emerging topological physics in practical environments and to build applicable nonlinear devices.

Thermal stability of non-collinear antiferromagnetic MnSn nanodot

Sato, Yuma*; Takeuchi, Yutaro*; Yamane, Yuta*; Yoon, J.-Y.*; Kanai, Shun*; Ieda, Junichi; Ohno, Hideo*; Fukami, Shunsuke*

Applied Physics Letters, 122(12), p.122404_1 - 122404_5, 2023/03

https://doi.org/10.1063/5.0135709

Observation of domain structure in non-collinear antiferromagnetic MnSn thin films by magneto-optical Kerr effect

Uchimura, Tomohiro*; Yoon, J.-Y.*; Sato, Yuma*; Takeuchi, Yutaro*; Kanai, Shun*; Takechi, Ryota*; Kishi, Keisuke*; Yamane, Yuta*; DuttaGupta, S.*; Ieda, Junichi; et al.

Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04

https://doi.org/10.1063/5.0089355

Correlation of anomalous Hall effect with structural parameters and magnetic ordering in MnSn thin films

Yoon, J.-Y.*; Takeuchi, Yutaro*; DuttaGupta, S.*; Yamane, Yuta*; Kanai, Shun*; Ieda, Junichi; Ohno, Hideo*; Fukami, Shunsuke*

AIP Advances (Internet), 11(6), p.065318_1 - 065318_6, 2021/06

https://doi.org/10.1063/5.0043192

Tono regional hydrogeological study project; Annual report fiscal year 2001

Semba, Tsuyoshi; Osawa, Hideaki; ; Yabuuchi, Satoshi; Takeuchi, Shinji; Hama, Katsuhiro; Matsuoka, Toshiyuki

JNC TN7410 2002-007, 51 Pages, 2002/10

JNC-TN7410-2002-007.pdf:0.99MB

Tono Geoscience Center, Japan Nuclear Cycle Development Institute has been conducting a wide range of geoscientific research in order to build a firm scientific and technological basis for the research and development of geological disposal. One of the major components of the ongoing geoscientific research programme is the Regional Hydrogeological Study (RHS) project in the Tono region, central Japan. The main goal of the RHS project is to develop and demonstrate surface-based investigation methodologies to characterize geological environments on a regional scale in Japan. The RHS project was initiated in 1992. To date, remote sensing, geological mapping, airborne and ground geophysical investigations, and measurements in eleven deep boreholes have been carried out in the study area (c. 100 km). Groundwater chemistry and hydraulic head monitoring is under way in these boreholes. Important results that have been obtained from these investigations include various information concerning the heterogeneity of lithological, hydrogeological and geochemical, and evolution of the groundwater geochemistry. During fiscal year 2001, hydraulic testing and groundwater sampling were conducted in borehole DH-13 which was drilled during fiscal year 2000. High density electrical resitivity measurements were conducted on a lineament. Groundwater monitoring was continued in the existing boreholes. As a part of evaluation of data uncertainties for modeling and simulation, study was started with the purpose of setting of modeling and simulation area around MIU constructionsite. Development of investigation instruments were also continued.

In-situ evaluation of high accuracy elastic wave measurement system with pseudo random wave

Ishiyama, Koji*; Yoshino, Osamu*; Hikima, Ryoichi*; Matsui, Hiroya; Ozaki, Yusuke; Takeuchi, Ryuji; Sakakibara, Junichi*; Sanoki, Satoru*; Hayashi, Kunihiko*

no journal, , 

In this study, we evaluate the high accurate elastic wave measurement system at the 500m stage in Mizunami underground research laboratory. We used the sine and pseudo random wave between 0.5 kHz and 20 kHz as source signals and received them by 6 receivers. We observed that the elastic wave became low speed and high attenuation around the zone where the rock classification was lower than surroundings. From this result, we could capture the damaged zone by elastic wave. For the capability of deeper exploration, we need to improve the transmission system.

電子デバイス、その製造方法及びその使用方法

家田 淳一

竹内 祐太朗*; 深見 俊輔*; 山根 結太*; Yoon J.-Y.*; 陣内 佛霖*; 金井 駿*; 大野 英男*

JP, 2021-071582  Patent licensing information

【課題】 外部磁場が不要であり、比較的大きな読み出し信号の出力が可能な乱数生成素子、メモリ素子として使用することが可能であり、また、出力/入力周波数の可変性を備えた発振/検波素子としても使用することが可能である電子デバイスを提供することを目的とする。 【解決手段】 本体と、入力端子と、出力端子と、を備え、前記本体は、基板上にスピントルク生成層とノンコリニア反強磁性層がこの順、または逆順の積層方向に積層されて構成されるものであり、前記入力端子は、前記スピントルク生成層の積層面と平行な任意の一方向の両端に配置され、前記ノンコリニア反強磁性層は、前記任意の一方向と前記積層方向が成す平面においてノンコリニアな磁気秩序を有することを特徴とする電子デバイス。

電子デバイス、その製造方法及びその使用方法

家田 淳一

竹内 祐太朗*; 深見 俊輔*; 山根 結太*; Yoon J.-Y.*; 陣内 佛霖*; 金井 駿*; 大野 英男*

JP, 202280029040.1  Patent licensing information

外部磁場が不要であり、比較的大きな読み出し信号の出力が可能な乱数生成素子、メモリ素子として使用することが可能であり、また、出力/入力周波数の可変性を備えた発振/検波素子としても使用することが可能である電子デバイスを提供することを目的とする。 本体と、入力端子と、出力端子と、を備え、前記本体は、基板上にスピントルク生成層とノンコリニア反強磁性層がこの順、または逆順の積層方向に積層されて構成されるものであり、前記入力端子は、前記スピントルク生成層の積層面と平行な任意の一方向の両端に配置され、前記ノンコリニア反強磁性層は、前記任意の一方向と前記積層方向が成す平面においてノンコリニアな磁気秩序を有することを特徴とする電子デバイス。