Radiation response of triplejunction solar cells designed for terrestrial application

地上用三接合太陽電池の放射線照射による特性変化

大島 武; 今泉 充*; 高本 達也*; 住田 泰史*; 大井 暁彦; 川北 史朗*; 伊藤 久義; 松田 純夫*

Oshima, Takeshi; Imaizumi, Mitsuru*; Takamoto, Tatsuya*; Sumita, Taishi*; Oi, Akihiko; Kawakita, Shiro*; Ito, Hisayoshi; Matsuda, Sumio*

地上用に開発された高効率InGaP/GaAs/Ge三接合太陽電池の電子線,陽子線照射効果を調べた。用いた太陽電池はGaAsミドルセルにInを1%添加しており、AM1.5(地上での光スペクトル)で30%以上という世界最高の変換効率を有する。1MeV電子線、10MeV陽子線照射の結果、宇宙用GaAs単接合太陽電池とほぼ同様の耐放射線性を示すが、宇宙用に開発された米国製三接合太陽電池と比べると耐放射線性が低いことがわかった。電気特性及び量子効率と陽子線エネルギーの関係を調べたところ、GaAsミドルセルの劣化が大きく、結果として太陽電池全体が劣化していることが見出された。

The effects on proton and electron irradiateions of the characteristics of InGaP/GaAs/Ge triple junction designed for terrestrial application were studied. The solar cells used in this study has a 1% In-contained GaAs middle sub-cell, and their efficiency is more than 30 % under AM1.5, which is the highest efficiency of all solar cells in the world.As the results of 1MeV-electron and 10 MeV-proton irradiation, terrestrial triple-junction sole cells were found to have the same radiation resistance as space single junction GaAs solar cells, although terrestrial triple-junction solar cells is not stronger than space triple-junction solar cells made in USA. As the result of proton energy dependence of the electrical characteristics and quantum efficiency, the strong degradation of the GaAs middle cell was observed.