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高選択・制御性沈殿剤による高度化沈殿法再処理システムの開発,2; 低配位性・低疎水性ピロリドン誘導体の耐放射線性及び耐熱性の検討

Development of advanced reprocessing system using high selective and controllable precipitants, 2; Evaluation of radiation and heat resistance of low coordinate and hydrophobic pyrrolidone derivatives

丸山 幸一*; 野上 雅伸*; 池田 泰久*; 西村 建二*; 森田 泰治 

Maruyama, Koichi*; Nogami, Masanobu*; Ikeda, Yasuhisa*; Nishimura, Kenji*; Morita, Yasuji

U(VI)に対し選択的沈殿能を有する低配位性・低疎水性沈殿剤(NProP, NBP)の耐放射線性及び耐熱性を調べるため、$$gamma$$線照射及び加熱による沈殿能の変化及び劣化生成物の検討を行った。NProP及びNBPの耐放射線性試験の結果、ともに照射線量に依存せず、3M硝酸中では0.5MGyまで照射後も当初の沈殿能を維持すること、また、NProP及びNBPの耐熱性試験として3M硝酸中で50$$^{circ}$$Cに加熱した結果、NBPは4日以内、NProPは10日以内にその構造を大きく変えるが、これはU(VI)に対する沈殿能の劣化につながらず、むしろ沈殿剤の疎水性の増大により沈殿能が向上することが明らかとなった。

Radiation and heat resistance of low coordinate and hydrophobic pyrrolidone derivatives, NProP and NBP, which are selective precipitants for U(VI), was examined by $$gamma$$-irradiation and heating of the 3M nitric and solutions of the precipitants. Test results of radiation resistance of NProP and NBP showed that the ability to make precipitate of U(VI) was kept until 0.5 MGy of irradiation. After the heating of the 3M nitric and solutions of NProP and NBP at 50 $$^{circ}$$C, the molecular structures of NBP and NProP were changed within 4 days and 10days, respectively. It was found that the change of the structure does not weaken but reinforce the ability to make precipitate of U(VI), which would due to the increase of the hydrophobicity.

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