Decrease of charge collection due to displacement damage by rays in a 6H-SiC diode

線のはじき出し損傷による6H-SiCの電荷収集低下

小野田 忍; 大島 武; 平尾 敏雄; 三島 健太; 菱木 繁臣; 岩本 直也; 児島 一聡*; 河野 勝泰*

Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Mishima, Kenta; Hishiki, Shigeomi; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*

In order to investigate the influence of displacement damage or change collection in Sic diode, the charge generated in 6H-SiC np diodes by 15 MeV O ions was measured using the TIBIC (Transient Ion Beam Induced Current) system before and after -ray irradiations. The measured CCE (Collected Charge Efficiency) and the diffusion length reduce with increasing the equivalent displacement damage dose which is estimated using Non Ionizing Energy Loss (NIEL). It was found that the degradation of the diffusion length for p-type 6H-SiC is proportional to the square of the displacement damage dose, and this relationship is the same as that reported for n-type SiC and p-type GaAs.