Raman and FT-IR spectroscopy of electron irradiated LiNbO

電子線照射したLiNbOのラマン及びFT-IR分析

Miyazaki, Hisashi*; Morimoto, Jun*; Toda, Koji*; Onoda, Shinobu; Oshima, Takeshi

LiNO has several advantages for opto-electronic and acousto-optic applications including waveguides, modulators, second harmonic generators and surface acoustic wave (SAW) devices. In this study, we characterized the defects in electron irradiated LiNbO single crystal substrates using Raman. The Raman peak of symmetrical O-Nb-O bending mode drastically decreased with increasing electron irradiation. It is thought that the electron irradiation gives the biggest influence on the Nb-O bond.

使用言語	:	English
掲載資料名	:	Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9)
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ページ数	:	p.226 - 229
発行年月	:	2010/10
発表会議名	:	9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9)
開催年月	:	2010/10
開催都市	:	Takasaki
開催国	:	Japan
キーワード	:	no keyword

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使用施設	:	電子加速器
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登録番号 : BB20102284
抄録集掲載番号 : 39000113
論文投稿番号 : 8354

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