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Ion beam irradiation effects on resist materials

レジスト材に対するイオンビーム照射効果

五輪 智子*; 高橋 朋宏*; 岡 壽崇; 村上 健*; 大島 明博*; 田川 精一*; 鷲尾 方一*

Gowa, Tomoko*; Takahashi, Tomohiro*; Oka, Toshitaka; Murakami, Takeshi*; Oshima, Akihiro*; Tagawa, Seiichi*; Washio, Masakazu*

6 MeV/u ion beams (Si$$^{14+}$$, Ar$$^{18+}$$, etc.) and 30 kV Ga$$^{+}$$ focused ion beam (FIB) were irradiated to a chemical amplified deep-UV resist and electron beam resist. The resist sensitivities were correlated with the energy deposition of ion beams, we obtained clear patterns of the resists. In contrast, crosslinking reaction of resist polymer was induced by the FIB irradiation, positive-negative inversion took place.

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