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放射光光電子分光により実測したSiO$$_{2}$$の有効減衰長(EAL)と非弾性平均自由行程(IMFP)計算値の比較

Comparison of effective attenuation length (EAL) for SiO$$_{2}$$ determined using synchrotron radiation XPS with calculated inelastic mean free path (IMFP)

井上 敬介*; 寺岡 有殿; 神農 宗徹

Inoue, Keisuke*; Teraoka, Yuden; Jinno, Muneaki

有効減衰長EALは、X線光電子分光(XPS)を用いて薄膜の膜厚を求めるときに必須のパラメーターである。EALは実験的に求められていないことが多く、非弾性平均自由行程(IMFP)の計算値が代用される。今回SiO$$_{2}$$のEALを放射光エネルギー480-800eVの範囲で放射光光電子分光(SR-XPS)を用い測定した。実測したEALの値はIMFP計算値とは異なる値となった。

The effective attenuation length (EAL) is a necessary parameter for estimating the thin film thickness using X-ray photoemission spectroscopy (XPS). The inelastic mean free path (IMFP) is often used instead of the EAL because EAL is scarcely known. In this experiment, EAL values of SiO$$_{2}$$ were measured in the photon energy region of 480 eV to 800 eV using synchrotron radiation photoemission spectroscopy. The estimated EALs are different from calculated IMFPs.

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