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X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

InGaAs/GaAs(001)エピタキシャル成長中の転位が関与したひずみ緩和過程のX線逆格子マッピング

佐々木 拓生*; 鈴木 秀俊*; 高橋 正光; 大下 祥男*; 神谷 格*; 山口 真史*

Sasaki, Takuo*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*

Dislocation-mediated strain relaxation during lattice-mismatched InGaAs/GaAs(001) heteroepitaxy was studied through ${it in situ}$ X-ray reciprocal space mapping. At the synchrotron radiation facility SPring-8, a hybrid system of molecular beam epitaxy and X-ray diffractometry with a two-dimensional detector enabled us to perform ${it in situ}$ reciprocal space mapping at high-speed and high-resolution. Using this experimental setup, the lattice constants, the diffraction broadenings along in-plane and out-of-plane directions, and the diffuse scattering were investigated. The strain relaxation processes were classified into four thickness ranges with different dislocation behavior. In addition, the existence of transition regimes between the thickness ranges was identified.

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パーセンタイル:53.52

分野:Physics, Applied

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