Epitaxy of graphene on 3C-SiC(111) thin films on microfabricated Si(111) substrates

微細加工したSi(111)基板上の3C-SiC(111)薄膜におけるグラフェンのエピタキシー成長

井出 隆之*; 川合 祐輔*; 半田 浩之*; 吹留 博一*; 小嗣 真人*; 大河内 拓雄*; 遠田 義晴*; 木下 豊彦*; 吉越 章隆 ; 寺岡 有殿; 末光 眞希*

Ide, Takayuki*; Kawai, Yusuke*; Handa, Hiroyuki*; Fukidome, Hirokazu*; Kotsugi, Masato*; Okochi, Takuo*; Enta, Yoshiharu*; Kinoshita, Toyohiko*; Yoshigoe, Akitaka; Teraoka, Yuden; Suemitsu, Maki*

Epitaxy of graphene on 3C-SiC(111) formed on microfabricated Si(111) has been demonstrated. Through observations with optical microscopy, micro-Raman spectroscopy, low-energy-electron diffraction, and photoelectron spectroscopy, it is confirmed that the epitaxial graphene is Bernal-stacked with a buffer layer present between the graphene and the 3C-SiC film, which can lead SiC film, which can lead to opening of the band gap necessary for logic operations. The quality of the graphene is improved with the shrinkage of patterned terrace. These results indicate that GOS using substrate microfabrication is a promising method for the realization of graphene-based devices.