検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

InGaAsのMBE成長中の高速三次元逆格子マッピング

Hu, W.; 鈴木 秀俊*; 佐々木 拓生*; 神津 美和*; 高橋 正光

Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu

This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. Using this method, the strain relaxation process of InGaAs heteroepitaxial films grown on GaAs(001) has been investigated.

Access

:

- Accesses

InCites™

:

パーセンタイル:29.79

分野:Chemistry, Multidisciplinary

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.