Characterization of self-assisted InAs nanowire on Si substrate during MBE growth using in-situ X-ray diffraction

シリコン基板上自己触媒InAs量子細線のMBE成長中のその場X線回折による評価

Hu, W.; 高橋 正光; 神津 美和*; 仲田 侑加*

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*

In-situ investigation of the structure of the nanowires (NWs) during the growth is a most promising way for understanding the growth mechanism and optimizing growth parameters. In this work, we investigated the growth process of self-assisted InAs NWs on Si(111) substrate during the MBE growth using X-ray diffraction technique. Experiments were carried out at the SPring-8 synchrotron radiation facility at beamline 11XU using a psic-type X-ray diffractometer integrated with an MBE chamber, which enables in-situ characterization during the growth of group III-V semiconductors. During the growth, intensity distribution about the symmetric 111 and the structure sensitive wurtzite (WZ) and zincblende (ZB) asymmetric Bragg reflections of InAs nanowires was measured using a PILATUS 100 K detector.